Electronic device

ABSTRACT

A highly convenient electronic device used while being worn on a body is provided. The electronic device is an arm-worn electronic device including a display panel, a power storage device, a circuit, and a sealing structure. The display panel displays an image with power supplied from the power storage device. The circuit includes an antenna and charges the power storage device wirelessly. Inside the sealing structure, the display panel, the power storage device, and the circuit are provided. The sealing structure includes a portion that transmits visible light. The sealing structure can be worn on an arm or is connected to a structure body that can be worn on an arm.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. application Ser. No.15/095,286, filed Apr. 11, 2016, now allowed, which claims the benefitof foreign priority applications filed in Japan as Serial No.2015-088420 on Apr. 23, 2015, and Serial No. 2015-157021 on Aug. 7,2015, all of which are incorporated by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

One embodiment of the present invention relates to an electronic device.In particular, one embodiment of the present invention relates to awearable electronic device, for example, an arm-worn electronic device.

Note that one embodiment of the present invention is not limited to theabove technical field. Examples of the technical field of one embodimentof the present invention include a semiconductor device, a displaydevice, a light-emitting device, a power storage device, a memorydevice, an electronic device, a lighting device, an input device (e.g.,a touch sensor), an input/output device (e.g., a touch panel), a drivingmethod thereof, and a manufacturing method thereof.

In this specification and the like, electronic devices mean all deviceswhich operate by being supplied with electric power, and electro-opticaldevices, information terminal devices, and the like including powersources (e.g., power storage devices) are all electronic devices.

In this specification and the like, power storage devices mean allelements and devices that have a function of storing electric power, anda storage battery (also referred to as a secondary battery) such as alithium-ion secondary battery, a lithium-ion capacitor, an electricdouble layer capacitor, and the like are all power storage devices.

2. Description of the Related Art

Display devices and electronic devices used while being worn on humanbodies have recently been developed and are referred to as wearabledisplays, wearable devices, and the like. For example, head-mounteddisplays which are mounted on heads and smart watches which are worn onarms have been developed.

Patent Document 1 discloses a ring-shaped display device that can beused while being worn on a human body.

Since the wearable devices are used while being worn on human bodies, areduction in weight of the entire device including a display panel, adriver circuit, and a power source is required to achieve highportability and comfort of wearing the wearable devices.

Wearable devices are generally equipped with power storage devices. Forexample, lithium-ion secondary batteries have been actively developedbecause the capacity thereof can be increased and the size thereof canbe reduced.

Light-emitting elements utilizing electroluminescence (also referred toas EL elements) have features of the ease of being thin, lightweight,and flexible, high-speed response to input signals, capability of DC lowvoltage driving, and the like, and thus are display elements which arepreferably used in wearable displays.

REFERENCE Patent Document

-   [Patent Document 1] United States Patent Application Publication No.    2015/0077438

SUMMARY OF THE INVENTION

Wearable devices that can be used in playing water sports (includingmarine sports), such as swimming and scuba diving, or taking a bath arerequired.

Wearable devices are used in a variety of environments; therefore,display panels and power storage devices which can be used in a widetemperature range are required. For example, electronic devices do notoperate normally in some cases in the following environment: in a placeexposed to direct sunlight, such as on a dashboard or by the window of acar; inside of a sun-heated car; a high-temperature environment such asdesert; or a low-temperature environment such as a cold region with aglacier.

An object of one embodiment of the present invention is to provide anelectronic device which can be used in water. Another object of oneembodiment of the present invention is to provide an electronic devicehaving high water resistance. Another object of one embodiment of thepresent invention is to provide an electronic device used while beingworn on a human body. Another object of one embodiment of the presentinvention is to provide an all-weather electronic device. Another objectof one embodiment of the present invention is to provide a highlyconvenient electronic device. Another object of one embodiment of thepresent invention is to provide a highly reliable electronic device.Another object of one embodiment of the present invention is to providean electronic device having high visibility irrespective of surroundingbrightness.

Another object of one embodiment of the present invention is to providean electronic device which can be used in a wide temperature range.Another object of one embodiment of the present invention is to providea small, lightweight, or flexible electronic device. Another object ofone embodiment of the present invention is to provide an electronicdevice with a high degree of safety. Another object of one embodiment ofthe present invention is to provide an electronic device with low powerconsumption. Another object of one embodiment of the present inventionis to provide an electronic device which can be used for a long time percharge. Another object of one embodiment of the present invention is toprovide a novel electronic device.

Note that the descriptions of these objects do not disturb the existenceof other objects. In one embodiment of the present invention, there isno need to achieve all the objects. Other objects can be derived fromthe description of the specification, the drawings, and the claims.

One embodiment of the present invention is an electronic deviceincluding a display panel, a power storage device, a circuit, and asealing structure. The display panel includes a light-emitting element.The light-emitting element has a function of emitting light with powersupplied from the power storage device. The circuit includes an antennaand has a function of charging the power storage device wirelessly.Inside the sealing structure, the display panel, the power storagedevice, and the circuit are provided. At least part of the sealingstructure has a function of transmitting light emitted from thelight-emitting element. The sealing structure can be worn on an arm.

In the above-described electronic device, when a user wears the sealingstructure on his/her arm, the power storage device, the antenna, and thedisplay panel may be stacked in this order from the arm side.

Another embodiment of the present invention is an electronic deviceincluding a display panel, a power storage device, a circuit, a sealingstructure, and a structure body. The display panel includes alight-emitting element. The light-emitting element has a function ofemitting light with power supplied from the power storage device. Thecircuit includes an antenna and has a function of charging the powerstorage device wirelessly. The sealing structure is connected to thestructure body. Inside the sealing structure, the display panel, thepower storage device, and the circuit are provided. At least part of thesealing structure has a function of transmitting light emitted from thelight-emitting element. The structure body can be worn on an arm.

In the above-described electronic device, when a user wears thestructure body on his/her arm, the power storage device, the antenna,and the display panel may be stacked in this order from the arm side.

Another embodiment of the present invention is an electronic deviceincluding a display panel, a power storage device, a circuit, and asealing structure. The display panel has a function of displaying animage with power supplied from the power storage device. The circuitincludes an antenna and has a function of charging the power storagedevice wirelessly. Inside the sealing structure, the display panel, thepower storage device, and the circuit are provided. At least part of thesealing structure has a function of transmitting visible light. Thedisplay panel includes a first display element and a second displayelement. The first display element includes a reflective layer which hasa function of reflecting light. The first display element has a functionof controlling light transmission. The reflective layer has an openingportion. The second display element includes a portion overlapping withthe opening portion. The second display element has a function ofemitting light toward the opening portion. The opening portionpreferably has an area greater than or equal to 5% and less than orequal to 20% of the area of the reflective layer.

In the above electronic device, it is preferable that the display panelfurther include a signal line, a pixel circuit, a first conductivelayer, a second conductive layer, and an insulating layer. The seconddisplay element is electrically connected to the pixel circuit. Thefirst display element is electrically connected to the first conductivelayer. The first conductive layer includes a portion overlapping withthe second conductive layer with the insulating layer providedtherebetween. The first conductive layer is electrically connected tothe second conductive layer. The second conductive layer is electricallyconnected to the pixel circuit. The pixel circuit is electricallyconnected to the signal line.

Another embodiment of the present invention is an electronic deviceincluding a display panel, a power storage device, a circuit, and asealing structure. The display panel has a function of displaying animage with power supplied from the power storage device. The circuitincludes an antenna and has a function of charging the power storagedevice wirelessly. Inside the sealing structure, the display panel, thepower storage device, and the circuit are provided. At least part of thesealing structure has a function of transmitting visible light. Thedisplay panel includes a liquid crystal element and a light-emittingelement. The liquid crystal element includes a liquid crystal layer, afirst conductive layer, and a second conductive layer. The firstconductive layer has a function of reflecting light. The firstconductive layer has an opening portion. The light-emitting elementincludes a layer containing a light-emitting substance, a thirdconductive layer, and a fourth conductive layer. The light-emittingelement includes a portion overlapping with the opening portion. Thelight-emitting element has a function of emitting light toward theopening portion. The opening portion preferably has an area greater thanor equal to 5% and less than or equal to 20% of the area of the firstconductive layer.

In the above electronic device, it is preferable that the display panelfurther include a signal line, a pixel circuit, a fifth conductivelayer, a sixth conductive layer, and an insulating layer. Thelight-emitting element is electrically connected to the pixel circuit.The liquid crystal element is electrically connected to the fifthconductive layer. The fifth conductive layer includes a portionoverlapping with the sixth conductive layer with the insulating layerprovided therebetween. The fifth conductive layer is electricallyconnected to the sixth conductive layer. The sixth conductive layer iselectrically connected to the pixel circuit. The pixel circuit iselectrically connected to the signal line.

In each of the electronic devices having the above structures, thesealing structure is preferably able to be worn on an arm. When a userwears the sealing structure on his/her arm, in the electronic device ofone embodiment of the present invention, the power storage device, theantenna, and the display panel may be stacked in this order from the armside.

Alternatively, in each of the electronic devices having the abovestructures, a structure body is preferably included. The sealingstructure is connected to the structure body. The structure body can beworn on an arm. When a user wears the structure body on his/her arm, inthe electronic device of one embodiment of the present invention, thepower storage device, the antenna, and the display panel may be stackedin this order from the arm side.

In addition, in each of the above structures, one or more of an audioinput portion, a touch sensor, an illuminance sensor, and a member whichenables the electronic device to be worn on an arm may be included. Theaudio input portion or the touch sensor can be positioned inside oroutside the sealing structure. The audio input portion, the touchsensor, and the illuminance sensor are each preferably positioned insidethe sealing structure. The audio input portion, the touch sensor, andthe illuminance sensor may each be connected to the display panel, thepower storage device, the circuit, or the like. Alternatively, thedisplay panel may include a touch sensor. The member which enables theelectronic device to be worn on an arm is connected to the sealingstructure or the structure body.

Furthermore, in each of the above structures, the display panel may havea curved surface whose radius of curvature is larger than or equal to 1mm and smaller than or equal to 150 mm. Alternatively, in each of theabove structures, the display panel may have a curved surface whoseradius of curvature is larger than 150 mm. For example, the displaypanel may have a curved surface whose radius of curvature is larger than150 mm and smaller than 1 m or a curved surface whose radius ofcurvature is larger than or equal to 1 m and smaller than or equal to 10m. The curved surface of the display panel may be a concave surface or aconvex surface, or both of them. In addition, in each of the abovestructures, the display panel may include a flexible portion.

Furthermore, in each of the above structures, the power storage devicemay have a curved surface whose radius of curvature is larger than orequal to 10 mm and smaller than or equal to 150 mm. In addition, in eachof the above structures, the power storage device may include a flexibleportion.

In addition, in each of the above structures, the inside of the sealingstructure is preferably a reduced pressure atmosphere. Alternatively, ineach of the above structures, a buoyancy material is preferably providedinside the sealing structure.

According to one embodiment of the present invention, an electronicdevice which can be used in water, an electronic device having highwater resistance, an electronic device used while being worn on a humanbody, an all-weather electronic device, a highly convenient electronicdevice, a highly reliable electronic device, or an electronic devicehaving high visibility irrespective of surrounding brightness can beprovided.

Furthermore, according to one embodiment of the present invention, anelectronic device which can be used in a wide temperature range, asmall, lightweight, or flexible electronic device, an electronic devicehaving high heat resistance, an electronic device with a high degree ofsafety, an electronic device with low power consumption, an electronicdevice which can be used for a long time per charge, or a novelelectronic device can be provided.

Note that the description of these effects does not disturb theexistence of other effects. One embodiment of the present invention doesnot necessarily have all the effects listed above. Other effects can bederived from the description of the specification, the drawings, and theclaims.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1G illustrate examples of an electronic device;

FIGS. 2A to 2C illustrate examples of an electronic device;

FIGS. 3A to 3F illustrate examples of an electronic device;

FIGS. 4A and 4B illustrate examples of an electronic device;

FIGS. 5A to 5D illustrate examples of an electronic device;

FIGS. 6A to 6D illustrate examples of components of an electronicdevice;

FIGS. 7A and 7B illustrate an example of components of an electronicdevice;

FIGS. 8A to 8C illustrate examples of components of an electronicdevice;

FIGS. 9A to 9D illustrate examples of an electronic device;

FIGS. 10A to 10D illustrate examples of an electronic device;

FIGS. 11A to 11C illustrate examples of how to wear an electronicdevice;

FIGS. 12A to 12C illustrate an example of a power storage device andexamples of electrodes;

FIGS. 13A and 13B illustrate examples of a power storage device;

FIGS. 14A and 14B illustrate an example of a power storage device;

FIG. 15 illustrates an example of a power storage device;

FIGS. 16A and 16B illustrate an example of a power storage device;

FIGS. 17A and 17B illustrate an example of a power storage device;

FIG. 18 illustrates an example of a power storage device;

FIGS. 19A to 19D illustrate an example of a method for fabricating apower storage device;

FIGS. 20A, 20B, 20C1, and 20C2 illustrate an example of a power storagedevice;

FIG. 21 illustrates an example of a power storage device;

FIGS. 22A to 22D illustrate an example of a method for fabricating apower storage device;

FIG. 23 illustrates an example of a power storage device;

FIGS. 24A and 24B illustrate an example of a light-emitting device;

FIGS. 25A and 25B illustrate an example of a light-emitting device;

FIGS. 26A to 26D illustrate examples of a light-emitting device;

FIGS. 27A and 27B illustrate an example of a light-emitting device;

FIGS. 28A to 28C illustrate an example of an input/output device;

FIGS. 29A and 29B illustrate an example of an input/output device;

FIGS. 30A and 30B illustrate examples of an input/output device;

FIGS. 31A to 31C illustrate examples of an input/output device;

FIGS. 32A and 32B illustrate examples of components of an electronicdevice;

FIGS. 33A and 33B illustrate examples of components of an electronicdevice;

FIGS. 34A to 34C illustrate an example of a transistor;

FIGS. 35A to 35G illustrate examples of an electronic device;

FIGS. 36A and 36B illustrate examples of an electronic device;

FIGS. 37A to 37F illustrate examples of an electronic device;

FIGS. 38A to 38C illustrate examples of an electronic device;

FIGS. 39A to 39D illustrate examples of an electronic device;

FIGS. 40A to 40D illustrate examples of components of an electronicdevice;

FIG. 41 illustrates an example of a pixel circuit of a display device;

FIGS. 42A, 42B1, and 42B2 illustrate examples of a display device;

FIGS. 43A, 43B1 and 43B2 illustrate an example of a display device;

FIGS. 44A to 44D illustrate an example of a display device; and

FIG. 45 illustrates an example of components of an electronic device.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments will be described in detail with reference to drawings. Notethat the present invention is not limited to the description below, andit is easily understood by those skilled in the art that various changesand modifications can be made without departing from the spirit andscope of the present invention. Accordingly, the present inventionshould not be interpreted as being limited to the content of theembodiments below.

Note that in the structures of the invention described below, the sameportions or portions having similar functions are denoted by the samereference numerals in different drawings, and description of suchportions is not repeated. Further, the same hatching pattern is appliedto portions having similar functions, and the portions are notespecially denoted by reference numerals in some cases.

The position, size, range, or the like of each structure illustrated indrawings is not accurately represented in some cases for easyunderstanding. Therefore, the disclosed invention is not limited to theposition, size, range, and the like disclosed in the drawings.

Note that the terms “film” and “layer” can be interchanged with eachother depending on the case or circumstances. For example, the term“conductive layer” can be changed into the term “conductive film”. Also,the term “insulating film” can be changed into the term “insulatinglayer”.

Embodiment 1

In this embodiment, electronic devices of embodiments of the presentinvention will be described with reference to FIGS. 1A to 1G, FIGS. 2Ato 2C. FIGS. 3A to 3F, FIGS. 4A and 4B, FIGS. 5A to 5D, FIGS. 6A to 6D,FIGS. 7A and 7B, FIGS. 8A to 8C, FIGS. 9A to 9D, FIGS. 10A to 10D, andFIGS. 11A to 11C.

In this embodiment, an arm-worn electronic device and a watch-typeelectronic device are mainly described as examples, and usage of anelectronic device of one embodiment of the present invention is notparticularly limited. For example, the electronic device may be usedwithout being worn on or may be used while being worn on part other thanan arm (a waist, a leg, or the like).

One embodiment of the present invention is an electronic deviceincluding a display panel, a power storage device, a circuit, and asealing structure. The display panel includes a light-emitting element.The light-emitting element has a function of emitting light with powersupplied from the power storage device. The circuit includes an antennaand has a function of charging the power storage device wirelessly.Inside the sealing structure, the display panel, the power storagedevice, and the circuit are provided. At least part of the sealingstructure has a function of transmitting light emitted from thelight-emitting element. As for the electronic device of one embodimentof the present invention, the sealing structure may be worn on an arm ora structure body connected to the sealing structure may be worn on anarm.

With the use of the sealing structure, the display panel, the powerstorage device, the circuit, and the like, which are sealed objects, canbe protected, so that a sturdy electronic device can be fabricated.Moreover, with the use of a sealing structure having high waterresistance, an electronic device which has high water resistance and canbe used in water can be fabricated.

Note that in this specification and the like, among components of anelectronic device of one embodiment of the present invention, componentswhich are positioned inside the sealing structure and are sealed by thesealing structure are also collectively referred to as a sealed object.

In the fabrication of the electronic device of one embodiment of thepresent invention, the display panel and the power storage device can becollectively covered with and sealed by the sealing structure. Thus, ahighly reliable electronic device can be simply fabricated. In addition,the sealing structure has a shape which can be worn on a human bodysnugly, such as a belt shape, whereby the sealing structure itself canbe worn on a human body and the electronic device can be used as awearable device.

In the electronic device of one embodiment of the present invention, thepower storage device can be charged by contactless power transmission.Therefore, the power storage device does not need to be taken out fromthe sealing structure in charging. Accordingly, the whole of the sealedobject can be completely sealed by the sealing structure, so that waterresistance of the electronic device can be further improved.

Note that in one embodiment of the present invention, one or morecomponents of the sealed object may be flexible. For example, thedisplay panel or the power storage device may be flexible or both thedisplay panel and the power storage device may be flexible.

In the case where at least one of the display panel and the powerstorage device is flexible, the sealing structure, which is flexible,can protect the display panel and/or the power storage device withoutreducing the flexibility. Using one embodiment of the present inventionin such a manner enables fabrication of a flexible electronic devicethat is highly reliable and highly safe. The flexible electronic deviceis preferable because effects of putting on and taking off theelectronic device easily, wearing comfortably, and the like can beobtained.

In the electronic device in this embodiment, the whole of the sealedobject is covered with the flexible sealing structure. When the sealedobject is covered with the flexible sealing structure, an electronicdevice that is not easily broken even after being repeatedly bent andstretched can be fabricated.

In addition, with a sealing structure having high heat resistance, thedisplay panel can be driven even at high temperatures. Furthermore, theelectronic device can be reversibly bent even at high temperatures. Inthat case, the light-emitting element and the power storage devicepreferably have high heat resistance.

Next, the electronic device of this embodiment is specificallydescribed.

FIG. 1A is a perspective view of an electronic device 100. FIG. 1B is atop view of the electronic device 100. FIG. 1C is a cross-sectional viewtaken along dashed-dotted line A-B in FIG. 1B, and FIG. 1F is across-sectional view taken along dashed-dotted line C-D in FIG. 1B.

The electronic device 100 includes a display panel 10, a power storagedevice 20, a circuit 30, and a sealing structure 40. In FIG. 1A and thelike, a portion of the display panel 10 whose display can be viewed byusers is referred to as a display portion 15 of the electronic device100.

<Display Portion 15>

The electronic device 100 includes the display portion 15. In FIG. 1A,the display portion 15 has a curved surface. In this embodiment, thedisplay panel 10 includes a light-emitting element, for example. In FIG.1C and the like, a direction in which light emitted from thelight-emitting element is denoted by arrows.

The display portion 15 may be flexible. In other words, the displayportion 15 may be changed in shape so that the curvature of the displayportion 15 can be changed from the curvature of the shape in FIG. 1A. Inaddition, the display portion 15 may be changed in shape from the shapeincluding the curved surface as shown in FIG. 1A to a flat shape asshown in FIG. 1B. Note that the flexible display portion 15 is notnecessarily changed in shape to the flat shape.

Alternatively, the display portion 15 is not necessarily flexible. Thedisplay portion 15 which is not flexible may be flat or have a curvedsurface.

In the case where the flexibility of the display panel is lower thanthat of the sealing structure, when the electronic device of oneembodiment of the present invention is worn on an arm or the like, it ispreferable that a radius of curvature of the display portion 15 hardlychange and end portions of the electronic device be bent.

<Sealing Structure 40>

The electronic device 100 includes the sealing structure 40. In FIG. 1A,the sealing structure 40 has a curved surface.

The sealing structure 40 has a belt-like portion that can be worn on anarm. The belt-like portion can function as a band of the electronicdevice 100.

The sealing structure 40 is flexible. In other words, the sealingstructure 40 can be changed in shape so that the curvature of thesealing structure 40 can be changed from the curvature of the shape inFIG. 1A. The curvature of the sealing structure 40 may be changed to belarger or smaller than that of the shape in FIG. 1A or may be changed tobe larger and smaller than that of the shape in FIG. 1A. In addition,the sealing structure 40 may be changed in shape from the shapeincluding the curved surface as shown in FIG. 1A to a flat shape asshown in FIG. 1B. Note that the flexible sealing structure 40 is notnecessarily changed in shape to the flat shape.

The sealing structure 40 is preferably formed using a film. The film hasone or more properties selected from a surface protection property, ashape-memory property, an optical property, and a gas barrier property.The film includes one of or both an inorganic film and an organic film.The sealing structure 40 may have a single-layer structure or astacked-layer structure.

Inside the sealing structure 40, the display panel 10, the power storagedevice 20, the circuit 30, and the like are provided. The sealed objectis sealed by the sealing structure 40 and is isolated from the airoutside the electronic device 100.

For example, the sealed object is positioned between surfaces of onefilm which is folded or the sealed object is positioned between a pairof films, and the film or the pair of films is laminated (e.g., sealed),whereby the sealed object may be sealed.

Alternatively, with an adhesive, surfaces of one film or a pair of filmsmay be bonded to each other to seal the sealed object. As the adhesive,various curable adhesives such as a reactive curable adhesive, athermosetting adhesive, an anaerobic adhesive, and a photo curableadhesive such as an ultraviolet curable adhesive can be used. Examplesof these adhesives include an epoxy resin, an acrylic resin, a siliconeresin, a phenol resin, a polyimide resin, an imide resin, a polyvinylchloride (PVC) resin, a polyvinyl butyral (PVB) resin, and an ethylenevinyl acetate (EVA) resin. In particular, a material with low moisturepermeability, such as an epoxy resin, is preferred. Alternatively, atwo-component-mixture-type resin may be used.

Note that when a surface of the electronic device 100 becomes unevenalong the shape of the sealed object, display is difficult to see insome cases. Thus, when the sealed object is put into a case such as aplastic case and the case is sealed by the sealing structure 40, thesurface of the electronic device 100 becomes flat, which is preferable.

When a film is used for the sealing structure 40, the flexibility of thesealing structure 40 can be increased.

There is no particular limitation on the material of the sealingstructure 40 as long as the material can withstand a temperature in ausage environment. The sealing structure 40 can be formed using avariety of materials such as glass, an organic resin, rubber, plastics,and a metal, for example.

For the sealing structure 40, a material having flexibility and alight-transmitting property with respect to visible light, e.g.,polyester resins such as polyethylene terephthalate (PET) andpolyethylene naphthalate (PEN), a polyacrylonitrile resin, a polyimideresin, a polymethyl methacrylate resin, a polycarbonate (PC) resin, apolyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, apolystyrene resin, a polyamide imide resin, a polyvinyl chloride resin,or an aramid resin can be used.

The sealing structure 40 preferably has high water resistance.Specifically, it is preferable that a high water-resistant material beused for the sealing structure 40 or a surface of the sealing structure40 be waterproofed. Thus, entry of moisture from the outside of theelectronic device 100 into the display panel 10 and the like isprevented, so that the reliability of the electronic device 100 can beincreased. In addition, the water resistance of the sealing structure 40is improved, whereby the electronic device 100 can be used in water.

The sealing structure 40 can transmit visible light at least in thedisplay portion 15. The users can view display in the display panel 10through the sealing structure 40. Moreover, the power storage device 20and the circuit 30 may be seen.

In one embodiment of the present invention, the sealing structure 40does not necessarily transmit visible light in a portion other than thedisplay portion 15. For example, the sealing structure 40 in a portionother than the display portion 15 may block visible light, and at leastone of the power storage device 20 and the circuit 30 is not necessarilyseen by the users.

In the electronic device 100, the display panel 10, the power storagedevice 20, and the circuit 30 are stacked. This stacking order is notparticularly limited as long as the display in the display panel 10 canbe viewed by the users. Alternatively, these layers are not necessarilystacked, and any two or more of the display panel 10, the power storagedevice 20, and the circuit 30 may be provided on the same plane.

For example, as illustrated in FIG. 1F and the like, in the electronicdevice 100, the circuit 30 may be provided over the power storage device20, and the display panel 10 may be provided over the circuit 30. Whenthe sealing structure 40 is worn on an arm and the power storage device20, the circuit 30, and the display panel 10 are stacked in this orderfrom the arm side, the users can view the display in the display panel10. Alternatively, the circuit 30, the power storage device 20, and thedisplay panel 10 may be stacked in this order from the arm side.

A space sealed by the sealing structure 40 is preferably in areduced-pressure atmosphere or an inert atmosphere. By such anatmosphere, the reliability of the display panel 10 or the like can beincreased compared with an air atmosphere.

FIGS. 1D and 1E are each a cross-sectional view taken alongdashed-dotted line A-B in FIG. 1B, which is different from thecross-sectional view in FIG. 1C. FIG. 1G is a cross-sectional view takenalong dashed-dotted line C-D in FIG. 1B, which is different from thecross-sectional view in FIG. 1F.

In FIGS. 1C and 1F, the sealing structure 40 on the front (displaysurface) side of the electronic device 100 covers side surfaces of thesealed object, and a surface on the rear side of the electronic device100 is flat; however, the present invention is not limited thereto. Asillustrated in FIGS. 1D and 1G, the sealing structure 40 on both thefront (display surface) side and the rear side of the electronic device100 may cover side surfaces of the sealed object, and the electronicdevice 100 may include portions that project as compared with the otherportions (e.g., a band portion) on both the front side and the rearside. Alternatively, as illustrated in FIG. 1E, the sealing structure 40on the rear side of the electronic device 100 may cover side surfaces ofthe sealed object and a surface on the front side (display surface) ofthe electronic device 100 may be flat. Moreover, as illustrated in FIG.1C, a portion including the display portion 15 of the electronic device100 may project as compared with the other portions (e.g., a bandportion). Alternatively, as illustrated in FIG. 1E, a portion thatprojects as compared with the other portions (e.g., a band portion) maybe provided on the rear side of the electronic device 100.

FIGS. 2A to 2C, FIGS. 3A to 3F, FIGS. 4A and 4B, and FIGS. 5A to 5Dillustrate electronic devices which are different from the electronicdevice 100.

FIG. 2A is a perspective view of an electronic device 100 a. FIG. 3A isa top view of the electronic device 100 a, FIG. 3B is a cross-sectionalview taken along dashed-dotted line E-F in FIG. 3A, and FIG. 3F is across-sectional view taken along dashed-dotted line G-H in FIG. 3A.

The electronic device 100 a includes the display portion 15. Inaddition, the electronic device 100 a includes the sealing structure 40.In the electronic device 100 a, the display panel 10, the power storagedevice 20, and the circuit 30 are provided inside the sealing structure40.

In the electronic device 100 a, the display panel 10 and the powerstorage device 20 overlap, the circuit 30 and the power storage device20 overlap, and the display panel 10 and the circuit 30 do not overlap.In this manner, the sealed object may be positioned in a portionfunctioning as a band in the sealing structure 40. For example, in thecase where the flexible power storage device 20 is used, the powerstorage device 20 can be positioned in a wide region inside the sealingstructure 40, and an electronic device that can be used for a long timeper charge can be fabricated.

Inside the sealing structure 40, a buoyancy material may be provided. Asthe buoyancy material, for example, a solid buoyancy material or agas-sealed type buoyancy material can be used. As the buoyancy material,a high molecular material (e.g., a resin) or a gas (e.g., a carbondioxide gas) may be used. As the buoyancy material, a foamed resinobtained by foaming polyethylene, polypropylene, styrol, or the like maybe used.

With the buoyancy material, the electronic device of one embodiment ofthe present invention easily floats in water, thus, when the electronicdevice is lost in water, it is easily found.

Alternatively, inside the sealing structure 40, a member with rubberelasticity may be provided. The internal stress that is generated whenthe member with rubber elasticity is changed in its shape is easilydispersed. Thus, the member with rubber elasticity can relieve stresslocally imposed on a bent portion of the electronic device of oneembodiment of the present invention when the electronic device is bent,and the electronic device can be prevented from being broken. The memberwith rubber elasticity can also serve as a buffer that dispersesexternal physical pressure or impact.

Note that rubber elasticity refers to elasticity that allows energy tobe absorbed under external force and to be stored as energy forrestoration. The member with rubber elasticity can be reversibly changedin its shape.

FIGS. 3C to 3E are each a cross-sectional view taken along dashed-dottedline E-F in FIG. 3A, which is different from the cross-sectional view inFIG. 3B.

The buoyancy material or the member with rubber elasticity is preferablyprovided in a space 42 shown in FIGS. 3B, 3C, 3D, and 3F, for example.

As illustrated in FIG. 3B, the display panel 10 and the power storagedevice 20 may be in contact with each other or the circuit 30 and thepower storage device 20 may be in contact with each other.Alternatively, as illustrated in FIG. 3C, the display panel 10 and thepower storage device 20 are not necessarily in contact with each other.Similarly, the circuit 30 and the power storage device 20 are notnecessarily in contact with each other. In addition, the display panel10, the power storage device 20, and the circuit 30 may each be incontact with the sealing structure 40. FIGS. 3B and 3C each show anexample where the power storage device 20 is in contact with the sealingstructure 40. FIG. 3C shows an example where the display panel 10 is incontact with the sealing structure 40. Alternatively, as illustrated inFIG. 3D, the sealing structure 40 is not necessarily contact with thesealed object. Note that in the case where there is a portion where anytwo or more of the display panel 10, the power storage device 20, thecircuit 30, and the sealing structure 40 are in contact with each other,these may be fixed with an adhesive or the like or may be in contactwith each other so that they can be moved relatively.

Alternatively, as illustrated in FIG. 3E, pressure inside the sealingstructure 40 may be sufficiently reduced. Thus, degradation of thedisplay panel 10, the power storage device 20, the circuit 30, and thelike due to impurities and the like can be suppressed. Moreover, anelectronic device can be thinner and more lightweight.

In FIGS. 3B and 3F, the sealing structure 40 on the front (displaysurface) side of the electronic device 100 a covers side surfaces of thesealed object, and a surface on the rear side of the electronic device100 a is flat; however, the present invention is not limited thereto. Asillustrated in FIG. 3D, the sealing structure 40 on both the front(display surface) side and the rear side of the electronic device 100 amay cover side surfaces of the sealed object, and the electronic device100 a may include portions that project as compared with the otherportions (e.g., a band portion) on both the front side and the rearside.

The number of each of the display panels 10, the power storage devices20, and the circuits 30 of the electronic device of one embodiment ofthe present invention is not limited to one, and may be two or moreseparately. In addition, the number of the display portions 15 providedin the electronic device of one embodiment of the present invention isalso not limited to one, and may be two or more.

FIG. 2B is a perspective view of an electronic device 100 b includingthree display portions (a display portion 15 a, a display portion 15 b,and a display portion 15 c).

The three display portions of the electronic device 100 b may be formedusing one display panel 10 including three display portions or may beformed using three display panels 10 each including one display portion.

In the case where an electronic device includes a plurality of displayportions, the variety of display can be increased. The plurality ofdisplay portions may be used as separate display portions, and maydisplay different images. Alternatively, the same image may be displayedon each display portion. Alternatively, one image may be displayed ontwo or more display portions.

The electronic device of one embodiment of the present invention ispreferably provided with a sensor which senses a sight line of a user, avertical direction, a rotation angle, or a rotation direction of theelectronic device, or the like. For example, a gyroscope sensor, animage sensor, or the like can be used. Thus, the electronic device candisplay an image in a direction or display portion which is easy to seefrom a user. Furthermore, a display portion which is difficult to seefrom the user is turned off, whereby power consumption can be reduced.Note that the user may operate the electronic device to select a displayportion to be used or contents displayed on a display portion.

An electronic device 100 c illustrated in FIG. 2C includes the displayportion 15 which is larger than that of the electronic device 100 a.

Even in the case where the electronic device has a large displayportion, when the above sensor is used, the user operates the electronicdevice, or the like, an image is displayed only on a portion which iseasy to see from a user and the other portions are turned off, thus,power consumption can be reduced.

The electronic device of one embodiment of the present invention mayhave a structure where a sealing structure is worn on an arm or may havea structure where a structure body connected to a sealing structure isworn on an arm. As the structure body, a band (e.g., a string, a wire, anet, and a belt), a spring, and the like are given as examples. Examplesof how to wear the electronic device include putting it directly on askin, putting it on an arm over clothes, sewing it on a portion ofclothes that overlaps with an arm, and attaching it with a hook and loopfastener or the like typified by Magic Tape (registered trademark)provided on a portion of clothes that overlaps with an arm.

The sealing structure may have a structure where a film and a belt-likeleaf spring which is made of a convex material (e.g., stainless steel)are combined. Alternatively, as the structure body, a belt-like leafspring which is made of a convex material (e.g., stainless steel) may beused. Thus, the electronic device can be put on or taken off in amoment. In this case, the electronic device is fixed in close contactwith a skin or with clothes between it and a skin. By using the leafspring, the electronic device can be a device in which the length of theband does not need to be adjusted and can be won regardless of thecircumference of an arm.

FIG. 4A is a perspective view of an electronic device 100 d. FIG. 5A isa top view of the electronic device 100 d, and FIG. 5B is across-sectional view taken along dashed-dotted line J-K in FIG. 5A. InFIG. 5B, a direction in which light emitted from the light-emittingelement included in the display panel 10 is denoted by arrows.

The electronic device 100 d includes the sealing structure 40 and a band155. Inside the sealing structure 40, the display panel 10, the circuit30, the power storage device 20, and the like are provided. The sealingstructure 40 is connected to the band 155.

The sealing structure 40 and the band 155 are preferably connected toeach other detachably. For example, a plurality of bands havingdifferent designs which can be connected to the sealing structure 40 areprepared, and the band to be connected to the sealing structure 40 isselected depending on the style of clothes or the place, the time, theconditions, or the like when the electronic device is used, wherebyopportunities to use the electronic device can be increased. Moreover,the used band 155 can be replaced with a new band. Alternatively, aplurality of sealing structures 40 whose shapes or performance isdifferent may be prepared, and the sealing structure 40 to be connectedto the band may be selected depending on the conditions.

Like an electronic device 100 e in FIG. 4B, the band 155 may have adepression portion and the sealing structure 40 may be positioned in thedepression portion. If the sealing structure 40 projects from the band155, when the electronic device rubs or bumps against another objectwhile being used, the display portion 15 might be damaged, and moreover,the electronic device might be broken. Thus, the band 155 is preferablyconnected to the sealing structure 40 so that the surface of the band155 and the surface of the sealing structure 40 can be in substantiallythe same plane. Note that the depth of the depression portion of theband 155 may be greater than the thickness of the sealing structure 40.

In FIG. 4A and FIG. 5A, an example where the width of the sealingstructure 40 is equal to the width of the band 155 is shown; however,one embodiment of the present invention is not limited thereto. Asillustrated in FIG. 5C, the width of the sealing structure 40 may benarrower than that of the band 155. Alternatively, as illustrated inFIG. 5D, the width of the sealing structure 40 may be broader than thatof the band 155.

Next, examples of components of the electronic device in one embodimentof the present invention are shown.

An element 150 in FIG. 6A includes the display panel 10, the powerstorage device 20, the circuit 30, and the sealing structure 40. Thedisplay panel 10, the power storage device 20, and the circuit 30 areprovided inside the sealing structure 40. Hereinafter, the display panel10, the power storage device 20, and the circuit 30 are collectivelyreferred to as a sealed object in some cases.

The element 150 can be used so that the sealing structure 40 isconnected to the band 155, like an element 150 a in FIG. 4A and anelement 150 b in FIG. 4B. Alternatively, as illustrated in FIGS. 3A to3E, the sealing structure 40 is formed in a belt shape, whereby thesealing structure 40 itself may be worn on an arm.

FIG. 6B is a block diagram illustrating an example of the connectionrelation in the sealed object.

The display panel 10 includes a light-emitting element 11. Thelight-emitting element 11 has a function of emitting light with powersupplied from the power storage device 20.

Note that the display panel 10 may have a function of emitting lightwith power supplied from a component other than the power storage device20.

The power storage device 20 includes a portion overlapping with thedisplay panel 10.

Note that the power storage device 20 may have a function of supplyingpower to a component other than the display panel 10.

The power storage device 20 includes a positive electrode, a negativeelectrode, a separator, an electrolyte, an exterior body, and the like.

The circuit 30 includes an antenna 31. The antenna 31 includes a portionoverlapping with the display panel 10. The circuit 30 can charge thepower storage device 20 wirelessly (without contact).

Providing the portion where the display panel 10 and the circuit 30overlap with each other or the portion where the display panel 10 andthe power storage device 20 overlap with each other enables a reductionin size of the element 150. In particular, it is preferred that aportion where the display panel 10, the power storage device 20, and thecircuit 30 overlap with one another be provided. A reduction in size ofthe element 150 is particularly effective in the case where the sealingstructure 40 and the band are separately provided. Note that in the casewhere a reduction in size of the element 150 is not needed, e.g., in thecase where the sealing structure 40 is used as the band of theelectronic device, the portion where the display panel 10 and thecircuit 30 overlap with each other or the portion where the displaypanel 10 and the power storage device 20 overlap with each other is notnecessarily provided.

It is preferred that the power storage device 20 include a portionoverlapping with the circuit 30. For example, at least part of theantenna 31 may overlap with the power storage device 20. The displaypanel 10, the power storage device 20, and the circuit 30 preferablyoverlap with one another such that the user of the electronic devicehardly perceives the antenna 31, e.g., the antenna 31 is providedbetween the display panel 10 and the power storage device 20, in whichcase the appearance of the electronic device can be maintained. Even ifthe display panel 10 is positioned between an external antenna and theantenna 31, radio waves can be transmitted and received. That is, aradio wave transmitted from the external antenna passes through thedisplay panel 10, and the antenna 31 receives the radio wave.

In the case where the usage environment of the electronic device isdetermined, a light-emitting element capable of emitting light in theenvironment and a power storage device capable of supplying power to thedisplay panel in the environment are used.

It is preferred that the electronic device of one embodiment of thepresent invention can be used at low temperatures and at hightemperatures. The electronic device of one embodiment of the presentinvention can be used in a wide temperature range (e.g., higher than orequal to 0° C. and lower than or equal to 100° C., preferably higherthan or equal to −25° C. and lower than or equal to 150° C., furtherpreferably higher than or equal to −50° C. and lower than or equal to200° C.). The electronic device of one embodiment of the presentinvention can be used either indoors or outdoors.

It is preferred that a light-emitting element of the electronic deviceof one embodiment of the present invention can emit light at bothtemperatures of 0° C. and 100° C. Furthermore, it is preferred that apower storage device of the electronic device of one embodiment of thepresent invention can supply power to the display panel at bothtemperatures of 0° C. and 100° C.

The electronic device may include a switch. In FIGS. 6C and 6D, thedisplay panel 10, the power storage device 20, the circuit 30, a circuit50, and a switch 51 are illustrated as a sealed object.

As illustrated in FIG. 6C, the circuit 30 can charge the power storagedevice 20 wirelessly when the switch 51 is off.

As illustrated in FIG. 6D, the power storage device 20 can supply powerto the display panel 10 when the switch 51 is on.

Components of the electronic device of one embodiment of the presentinvention will be described in detail below.

<Display Panel 10>

The display panel 10 includes the light-emitting element 11. Asstructure examples of the display panel 10, a light-emitting device willbe detailed in Embodiment 3 and an input/output device will be detailedin Embodiment 4. Note that a display element included in the displaypanel 10 is not limited to a light-emitting element. The display panelmay include a sensing element such as a touch sensor.

In the display panel 10, an active matrix method in which an activeelement (a non-linear element) is included in a pixel or a passivematrix method in which an active element is not included in a pixel canbe used.

The display panel 10 may be flexible. For example, when a film is usedfor at least one of a supporting substrate and a sealing substrate ofthe light-emitting element 11, the flexibility of the display panel 10can be increased.

For example, a display that can resist 100000-time bending performedwith a radius of curvature of 5 mm is preferably used. It is preferablethat the electronic device can be used while the display panel is bentwith a radius of curvature from 1 mm to 150 mm, preferably from 5 mm to150 mm.

It is preferred that an element capable of emitting light at lowtemperatures and at high temperatures be used as the light-emittingelement 11. The range of low temperatures is, for example, higher thanor equal to −100° C. and lower than or equal to 0° C., preferably higherthan or equal to −100° C. and lower than or equal to −25° C., morepreferably higher than or equal to −100° C. and lower than or equal to−50° C. The range of high temperatures is, for example, higher than orequal to 100° C. and lower than or equal to 300° C., preferably higherthan or equal to 150° C. and lower than or equal to 300° C., morepreferably higher than or equal to 200° C. and lower than or equal to300° C. Note that the light-emitting element 11 can emit light at higherthan 0° C. and lower than 100° C., in addition to at low temperaturesand at high temperatures. For example, the light-emitting element 11 canemit light at a room temperature (higher than or equal to 20° C. andlower than or equal to 30° C.).

As the light-emitting element 11, a self-luminous element can be used,and an element whose luminance is controlled by current or voltage isincluded in the category of the light-emitting element 11. For example,a light-emitting diode (LED), an organic EL element, an inorganic ELelement, or the like can be used. Another display element can be usedwithout limitation to the light-emitting element.

It is preferred that the heat resistance of the light-emitting element11 be as high as possible. For example, in the case where an organic ELelement is used as the light-emitting element 11, the glass transitiontemperature of each of organic compounds contained in the organic ELelement is preferably higher than or equal to 100° C. and lower than orequal to 300° C., more preferably higher than or equal to 150° C. andlower than or equal to 300° C.

In the case where the antenna 31 receives power from an external antennathrough the display panel 10 in one embodiment of the present invention,it is preferred that the thickness of a pair of electrodes included inthe light-emitting element 11 be as small as possible. For example, thetotal thickness of the pair of electrodes is preferably less than orequal to 1 μm, further preferably less than or equal to 500 nm, furtherpreferably less than or equal to 350 nm, further preferably less than orequal to 250 nm.

<Power Storage Device 20>

It is preferable that a power storage device capable of supplying powerto the display panel 10 in a low-temperature environment and ahigh-temperature environment be used as the power storage device 20. Thelow-temperature environment is, for example, an environment at higherthan or equal to −100° C. and lower than or equal to 0° C., preferablyan environment at higher than or equal to −100° C. and lower than orequal to −25° C., more preferably an environment at higher than or equalto −100° C. and lower than or equal to −50° C. The high-temperatureenvironment is, for example, an environment at higher than or equal to100° C. and lower than or equal to 300° C., preferably an environment athigher than or equal to 150° C. and lower than or equal to 300° C., morepreferably an environment at higher than or equal to 200° C. and lowerthan or equal to 300° C. Note that the power storage device 20 can beused in an environment at higher than 0° C. and lower than 100° C., inaddition to the low-temperature environment or the high-temperatureenvironment. For example, the power storage device 20 can be used at aroom temperature (higher than or equal to 20° C. and lower than or equalto 30° C.).

As examples of the power storage device 20, a lithium ion secondarybattery such as a lithium polymer battery (lithium ion polymer battery)using a gel electrolyte, a nickel-hydride battery, a nickel-cadmiumbattery, an organic radical battery, a lead-acid battery, an airsecondary battery, a nickel-zinc battery, and a silver-zinc battery canbe given.

A lithium ion secondary battery which achieves a high energy density ispreferable because the electronic device can be lightweight and small.

For example, a secondary battery containing a nonaqueous electrolyte canbe used. The nonaqueous electrolyte contains an ionic liquid (roomtemperature molten salt) and an alkali metal salt. A secondary batterywith high heat resistance can be obtained because the ionic liquid hasnon-flammability and non-volatility. For example, the ionic liquidpreferably contains an imidazolium cation and an anion. The alkali metalsalt is preferably a lithium salt.

A secondary battery using a gel electrolyte or an all-solid-statesecondary battery using a solid electrolyte are preferable because theheat resistance and the level of safety are high.

As the power storage device 20, any of secondary batteries with avariety of shapes, such as a coin-type (single-layer flat type)secondary battery, a cylindrical secondary battery, a thin secondarybattery, a square-type secondary battery, and a sealed secondary batterycan be used. Furthermore, a structure in which a plurality of positiveelectrodes, a plurality of negative electrodes, and a plurality ofseparators are stacked or a structure in which a positive electrode, anegative electrode, and a separator are wound (winding structure) may beemployed.

Alternatively, the electronic device of one embodiment of the presentinvention may include a lithium ion capacitor, a double layer capacitor,or the like, as the power storage device 20.

The power storage device 20 may be flexible. For example, when a film isused as an exterior body, the flexibility of the power storage device 20can be increased. In a region surrounded by the exterior body, at leasta positive electrode, a negative electrode, and an electrolyte (or anelectrolytic solution) are provided.

In the electronic device, the light-emitting element 11I and the powerstorage device 20 may be provided to overlap with each other. As thearea where the light-emitting element 11 and the power storage device 20overlap with each other is larger, the power storage device 20 can bemade warm in a wider area by utilizing heat of the light-emittingelement 11. The reliability of the electronic device can be increasedeven in the case where a power storage device which operates more hardlyin a low-temperature environment than in a high-temperature environmentis used.

Examples of a structure of the power storage device 20 are detailed inEmbodiment 2.

<Circuit 30>

The circuit 30 includes the antenna 31. The circuit 30 may include acontroller 32.

The antenna 31 can receive power from an external antenna (e.g., anantenna 68 of a charger). The antenna 31 may receive power from anexternal antenna through the display panel 10. Alternatively, theantenna 31 may receive power from an external antenna through the powerstorage device 20.

The controller 32 has a function of converting power received with theantenna 31 into power to be supplied to the power storage device 20 andoutputting the power to the power storage device 20. For example, thecontroller 32 may function as an AC-DC converter. In that case, thecontroller 32 converts power received with the antenna 31 into DC powerand outputs the DC power to the power storage device 20.

The electronic device of one embodiment of the present invention ischarged in the following manner: by an electromagnetic induction methodin which the antenna 68 of a charger (primary coil) and the antenna 31of the electronic device (secondary coil) are magnetically coupled and avoltage is generated at the secondary coil with an alternating magneticfield generated from the primary coil, power is transmitted to thesecondary coil side without contact. Note that the power receivingmethod is not limited to an electromagnetic induction method.

The uses for the antenna of the electronic device are not limited tocharging of the power storage device 20 without contact. For example,the electronic device may be provided with an antenna and a memorybetween which electronic data is transmitted and received. The displaypanel 10 may display an image, data, or the like in accordance with thereceived data. An antenna having a global positioning system (GPS)function with which location information or GPS time can be obtained maybe provided.

It is preferable for safety that input/output terminals for charging ordischarging a power storage device be not exposed on a surface of theelectronic device. In the case where the input/output terminals areexposed, the input/output terminals might short-circuit by water such asrain, or the input/output terminals might be in contact with a humanbody and cause an electric shock. The use of the antenna 31 enables astructure in which the input/output terminals are not exposed on asurface of the electronic device because the power storage device can becharged without contact.

<Circuit 50>

The circuit 50 has a function of converting power supplied from thepower storage device 20 into power which makes the light-emittingelement 11 emit light. For example, the circuit 50 may have a functionof converting (stepping up or stepping down) output voltage of the powerstorage device 20 into voltage which makes the light-emitting element 11emit light.

The circuit 50 may have a function of generating a signal for drivingthe display panel 10 and outputting the signal to the display panel 10.The circuit 50 may include a signal line driver circuit or a scan linedriver circuit. The display panel 10 may include a signal line drivercircuit or a scan line driver circuit.

<Switch 51>

The switch 51 is electrically connected to the circuit 50. The switch 51is also electrically connected to the power storage device 20. Theswitch 51 is also electrically connected to the circuit 30.

There is no particular limitation on the switch 51. For example, anelectrical switch, a mechanical switch, or the like can be used.Specifically, a transistor, a diode, a magnetic switch, a mechanicalswitch, or the like can be used.

FIGS. 7A and 7B illustrate a specific example of the sealed object. FIG.7A illustrates a front surface (display surface) of the sealed object,and FIG. 7B illustrates a rear surface of the sealed object.

FIGS. 7A and 7B illustrate an example where a laminated secondarybattery is used as the power storage device 20. As illustrated in FIG.7B, the central portion of the power storage device 20 is a portionwhere a plurality of electrodes are stacked and has a larger thicknessthan an end portion.

An electrode 21 a is electrically connected to one of a positiveelectrode and a negative electrode of the power storage device 20. Anelectrode 21 b is electrically connected to the other of the positiveelectrode and the negative electrode of the power storage device 20.

The electrodes 21 a and 21 b are each bent so as to sandwich the circuitboard 55 and are electrically connected to terminals 33 a and 33 b,respectively, over the circuit board 55.

The circuit board 55 is provided with components (shown as electronicparts 35) included in the circuit 30, the circuit 50, and the likeillustrated in FIG. 6C and the like. The circuit board 55 is providedwith electronic parts, for example, a capacitor, a resistor, or aswitching element. As the circuit board 55, a printed circuit board canbe used, for example.

The circuit board 55 is provided with the switch 51. FIGS. 7A and 7Billustrate an example where a magnetic switch is used as the switch 51.By attaching or detaching the magnet, the on/off state of the switch canbe switched.

The antenna 31 is electrically connected to a terminal 34 over thecircuit board 55. Part of the antenna 31 is positioned between the powerstorage device 20 and the display panel 10. That is, in the electronicdevice, the antenna 31 includes a portion overlapping with the displaypanel 10. Furthermore, the antenna 31 includes a portion overlappingwith the power storage device 20.

The antenna 31 can receive power from an external antenna through thedisplay panel 10.

The terminal 12 a included in the display panel 10 is electricallyconnected to a terminal 52 a over the circuit board 55 through a wiring53 a. The terminal 12 b included in the display panel 10 is electricallyconnected to a terminal 52 b over the circuit board 55 through a wiring53 b.

In the electronic device of one embodiment of the present invention, thepower storage device and the antenna each separately includes a portionoverlapping with the display panel. Furthermore, the power storagedevice and the circuit partly overlap with each other. As illustrated inFIGS. 7A and 7B, part of the antenna 31 may be positioned between thedisplay panel 10 and the power storage device 20, for example.

When at least two of components of the electronic device, e.g., thepower storage device, the display panel, the circuit board, and theantenna, partly overlap with each other as described above, the sue ofthe sealed object can be reduced, which is preferable.

For example, the power storage device 20 preferably includes a portionoverlapping with at least one of the display panel 10, the circuit board55, and the antenna 31. It is particularly preferable that the powerstorage device 20 include respective portions overlapping with thedisplay panel 10, the circuit board 55, and the antenna 31 asillustrated in FIGS. 7A and 7B.

An environment where the electronic device of one embodiment of thepresent invention can be used is not limited to an air atmosphere. Theelectronic device of one embodiment of the present invention can be usedin water at temperatures of higher than or equal to 0° C. and lower thanor equal to 100° C., for example. The electronic device of oneembodiment of the present invention can have high reliability even whenused in water since the light-emitting element and the power storagedevice can be used in a wide temperature range and are sealed by asealing structure, for example.

Alternatively, as illustrated in FIGS. 8A and 8B, the electronic deviceof one embodiment of the present invention may include a plurality ofregions sealed by the sealing structure 40. As illustrated in FIGS. 8Aand 8B, the sealed object may be placed in a plurality of spaces, and awiring 45 or the like for connecting the components placed in theplurality of spaces to each other may overlap with a sealing region 41.Such a region can be referred to as a flexible region 70. As illustratedin FIG. 8B, the electronic device can be bent in the flexible regions70. As in FIG. 8B, even if the display panel 10 is not flexible, theflexible regions 70 and a portion of the sealing structure 40 thatoverlaps with the power storage device 20 are bent, whereby theelectronic device can be bent and put around an arm or the like. In thecase where the display panel 10 is flexible, the electronic device maybe changed in shape by bending the display panel 10.

In FIG. 8A, the display panel 10 is included in an upper space and thepower storage device 20 and the circuit 30 are included in a lowerspace. The display panel 10 is electrically connected to the powerstorage device 20 and the circuit 30 through the wirings 45.

In the electronic device, the sealing region may be doubly included. Asillustrated in FIG. 8C, a sealing region 41 b surrounding a sealingregion 41 a may be provided and the display panel 10 and the like may bedoubly sealed. Double or multiple sealing can increase the reliabilityof the electronic device.

It is preferable that an and portion of each of the display panel 10,the power storage device 20, and the circuit 30 be chamfered asillustrated in FIG. 8C. Breaking the sealing at corner portions of thedisplay panel 10, the power storage device 20, the circuit 30, and thelike can be suppressed; thus, a reduction in reliability of theelectronic device can be suppressed even when a film or the like is usedas the sealing structure.

Furthermore, the electronic device of one embodiment of the presentinvention preferably includes a photoelectric conversion element so thatthe power storage device can be charged using the photoelectricconversion element. It is preferred that the power storage device can becharged by photovoltaic power generation, for example. Alternatively,the electronic device of one embodiment of the present invention mayhave a function of generating and charging power with the movement of anarm of a user.

The electronic device of one embodiment of the present inventionpreferably includes at least one sensor. As the sensor, a sensor thathas a function of measuring, for example, force, displacement, position,speed, acceleration, angular velocity, rotational frequency, distance,light (e.g., visible light, infrared light, and ultraviolet light),liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, electric current, voltage, electric power,radiation, flow rate, humidity, gradient, oscillation, or odor can beused.

The electronic device of one embodiment of the present inventionpreferably includes a sensor that measures the user's biologicalinformation such as the heart rate, the breath rate, the pulse, thetemperature, or the blood pressure.

The electronic device of one embodiment of the present inventionpreferably has functions of sensing biological information andpositional information and transmitting the information. For example,the electronic device can sense changes in user's physical conditionsand transmit the biological information and the positional informationto another electronic device. Thus, when the user gets out of conditionor has an accident, he or she can be saved or the like quickly.

For example, an optical sensor can be used to measure a heart rate fromcontraction of capillaries of an arm or the like.

Alternatively, a sensor that can sense whether the electronic device isworn on the user's arm from the electric conductivity of his/her skinmay be used so that the electronic device can be automatically poweredon and off.

Any of these sensors is preferably provided on the surface side of theelectronic device on which it is in contact with the user's skin.

Furthermore, the electronic device may be capable of measuring data ofthe usage environment, and may include a UV sensor or an illuminancesensor, for example. The amount of ultraviolet light can be determinedto be used by a user for measures against sunburn. Alternatively, thebrightness of the display portion may be capable of being automaticallyadjusted according to the ambient illuminance. Any of these sensors ispreferably provided on the display surface side of the electronicdevice, for example.

Furthermore, the electronic device of one embodiment of the presentinvention may be capable of receiving GPS signals.

The electronic device of one embodiment of the present inventionincludes a driver circuit of the display panel, a circuit for chargingthe power storage device wirelessly, and a protection circuit thatprevents overcharge of the power storage device and may further includea circuit for controlling or driving another functional element,specifically, an integrated circuit (e.g., a CPU).

In addition, the electronic device of one embodiment of the presentinvention may include a variety of functional elements or componentssuch as an image sensor, a power generation element, a speaker, and amicrophone.

The electronic device of one embodiment of the present invention mayinclude a touch panel.

In one embodiment of the present invention, a structure where acapacitive touch sensor or a pressure-sensitive touch sensor is providedto overlap with the display panel, a structure where the display panelitself has a touch sensor function (also referred to as an in-cell touchpanel), or the like can be used. For the in-cell touch panel, acapacitive touch sensor, an optical touch sensor, or the like can beused.

In playing water sports, such as swimming and scuba diving, or taking abath, it is difficult to perform touch operation or detect touchoperation in some cases. Thus, the electronic device of one embodimentof the present invention preferably includes an audio input portion asan input unit. For example, the electronic device preferably includes amicrophone, particularly, a bone conduction microphone. The boneconduction microphone having excellent noise resistance can detect voicewith high sensitivity even in an outdoor environment with much noise orinterference. In addition, the bone conduction microphone can befavorably used in water. Moreover, the microphone is not necessarilypositioned close to the mouth; thus, the degree of freedom of theposition where the electronic device is worn is high, and the microphonecan be used in an arm-worn electronic device without any trouble.Furthermore, the electronic device may include a bone conduction speakeras an output unit. Note that the electronic device may include anothermicrophone or speaker that can be used in water.

Alternatively, with one embodiment of the present invention, a wearabledevice used in daily life having high water resistance can befabricated. For example, the electronic device of one embodiment of thepresent invention has water resistance to at least 2 atmospheres (bars),preferably to 5 atmospheres, further preferably to 10 atmospheres, andstill further preferably to 20 atmospheres.

Alternatively, with one embodiment of the present invention, a wearabledevice for diving can be fabricated. For example, the electronic deviceof one embodiment of the present invention having water resistance to100 m, preferably to 200 m, can be used in diving in a shallow sea byscuba diving or the like. Moreover, the electronic device of oneembodiment of the present invention having water resistance to 300 m,preferably to 1000 m, can be used in diving in a deep sea as well as ina shallow sea. The electronic device of one embodiment of the presentinvention includes the display panel including the light-emittingelement; thus, visibility of display is high even at the nighttime or inwater.

In addition, the electronic device of one embodiment of the presentinvention preferably includes a rotary bezel, particularly, a reverserotation preventing bezel, for measuring the diving time or the pressurereduction time.

Moreover, the electronic device of one embodiment of the presentinvention may have a function of measuring, recording, or displayingtemperature, water temperature, the depth of water, a dive log, or thelike, or a chronograph function. Alternatively, the electronic device ofone embodiment of the present invention may have a function oftransmitting positional information specified by GPS signals to anotherelectronic device. Thus, the safety of marine sports or work in the seacan be improved.

Moreover, the electronic device of one embodiment of the presentinvention having salt water resistance can be favorably used in playingmarine sports or working in the sea, which is preferable.

FIGS. 9A to 9D and FIGS. 10A to 10D show specific examples of anarm-worn electronic device of one embodiment of the present invention.

Electronic devices illustrated in FIGS. 9A to 9D and FIGS. 10A to 10Deach include at least one display portion 15 and at least one sealingstructure 40.

FIGS. 9A and 9B and FIGS. 10A to 10C each illustrate an example of anelectronic device whose sealing structure 40 can be worn on an arm orthe like directly.

The sealing structure 40 is flexible and can be bent along a shape of aportion on which the electronic device is worn. Moreover, the displayportion 15 may also be flexible.

A buckle 91 is connected to the sealing structure 40.

In the sealing structure 40, a plurality of openings 93 are provided. Tosuppress damage to the sealing structure 40 which starts from endportions of the openings 93 or entry of impurities from end portions ofthe openings 93 into the sealing structure 40, sealing portions 95 arepreferably provided at the end portions of the openings 93. The sealingportion 95 can reinforce the vicinity of the end portions of theopenings 93 in the sealing structure 40. The material of the sealingportion 95 is not limited, and a metal, an alloy, an organic resin, orthe like can be used, for example.

FIG. 9A and FIG. 10A each show an example where each display portion 15is quadrangular and FIG. 9B and FIGS. 10B and 10C each show an examplewhere the display portion 15 is circular. There is no particularlimitation on a shape of the display portion 15. For example, any ofdisplay portions having various shapes such as a polygon other than aquadrangle, an ellipse, a semicircle, a star, and a heart can be used.

Although an electronic device in which one display portion is locatedalmost in the middle of the electronic device is illustrated in FIGS. 9Aand 9B, the position and the number of the display portions are notparticularly limited. As illustrated in FIG. 10A, three display portionsmay be provided. Alternatively, as illustrated in FIGS. 10B and 10C, adisplay portion may be located at a position which is apart from themiddle of the electronic device. Note that in the case where theelectronic device includes a plurality of display portions, the shapesof the plurality of display portions may be the same or different fromeach other.

FIGS. 9C and 9D and FIG. 10D each show an example of an electronicdevice whose structure body connected to the sealing structure 40 can beworn on an arm or the like.

As illustrated in FIG. 9C and FIG. 10D, the electronic device mayinclude a chain-like band 97 as the structure body, for example.Alternatively, as illustrated in FIG. 9D, the electronic device mayinclude a belt-like band 155 as the structure body.

FIGS. 9C and 9D each show an example where one sealing structure 40 andone display portion 15 are included, and FIG. 10D shows an example wheretwo sealing structures 40 and two display portions 15 are included.

As a material of the structure body, one or more of a metal, a resin, anatural material, and the like can be used. As the metal, stainlesssteel, aluminum, a titanium alloy, or the like can be used. As theresin, an acrylic resin, a polyimide resin, or the like can be used. Asthe natural material, processed wood, stone, bone, leather, paper, orcloth can be used, for example.

FIGS. 11A to 11C each show an example of how to wear the electronicdevice of one embodiment of the present invention. FIG. 11A shows anexample where the electronic device of one embodiment of the presentinvention is won on a wrist. FIG. 11B shows an example where theelectronic device of one embodiment of the present invention is worn onclothes, which can also be called an armband electronic device. FIG. 11Cshows an example where the electronic device of one embodiment of thepresent invention is worn on an upper arm.

The electronic device of one embodiment of the present invention is notnecessarily worn on part of a human body. It can be attached to a robot(e.g., a factory robot and a humanoid robot), a columnar object (e.g., acolumn of a building, a utility pole, and an indicator pole), a tool, orthe like.

The electronic device of one embodiment of the present invention mayhave a communication function and may be capable of sending andreceiving e-mails by itself, for example. The electronic device ispreferably capable of executing a variety of applications such as mobilephone calls, e-mailing, reading and editing texts, music reproduction,Internet communication, and a computer game.

Alternatively, the electronic device of one embodiment of the presentinvention may be connected wirelessly to another portable informationterminal or a mobile phone such as a smartphone so as to send andreceive e-mails, for example. For example, when a display portion of theelectronic device of one embodiment of the present invention is usedtogether with a display portion of a smartphone, the display portion ofthe electronic device of one embodiment of the present invention may beused as a subdisplay.

As described above, in one embodiment of the present invention, adisplay panel, a circuit, a power storage device, and the like aresealed by a sealing structure having high water resistance, whereby awearable device which can be used in playing water sports or taking abath can be fabricated. In addition, in one embodiment of the presentinvention, a sealing structure, a display panel, and a power storagedevice each having high heat resistance are used, whereby a wearabledevice which can be used in a wide temperature range can be fabricated.

This embodiment can be combined with any other embodiment asappropriate.

Embodiment 2

In this embodiment, a power storage device that can be used in theelectronic device of one embodiment of the present invention will bedescribed with reference to FIGS. 12A to 12C, FIGS. 13A and 13B, FIGS.14A and 14B, FIG. 15, FIGS. 16A and 16B, FIGS. 17A and 17B, FIG. 18,FIGS. 19A to 19D, FIGS. 20A, 20B, 20C1, and 20C2, FIG. 21, FIGS. 22A to22D, and FIG. 23. Note that the power storage device of one embodimentof the present invention is not limited to the structures described inthis embodiment, and various shapes and modes can be used.

Although a lithium-ion secondary battery is described as an example inthis embodiment, one embodiment of the present invention is not limitedto this example. One embodiment of the present invention can be used forany of a battery, a primary battery, a secondary battery, a lithium airbattery, a lead storage battery, a lithium-ion polymer secondarybattery, a nickel-hydrogen storage battery, a nickel-cadmium storagebattery, a nickel-iron storage battery, a nickel-zinc storage battery, asilver oxide-zinc storage battery, a solid-state battery, an air cell, azinc-air battery, a capacitor, a lithium-ion capacitor, an electricdouble layer capacitor, an ultracapacitor, a supercapacitor, and thelike.

In one embodiment of the present invention, power can be fed to thepower storage device by a method for feeding power to an object(hereinafter, also referred to as a power receiving device) in a statewhere contact with a power supply source (hereinafter, also referred toas a power transmitting device) is not made (such a method is alsoreferred to as contactless power feeding, wireless feeding, or thelike). Examples of the contactless power feeding include a magneticresonance method, an electromagnetic induction method, an electrostaticinduction method, and the like.

Structure Example 1

FIG. 12A illustrates a battery unit 500. Although FIG. 12A illustrates amode of a thin secondary battery as an example of the battery unit 500,one embodiment of the present invention is not limited to this example.For example, a secondary battery using a wound body or a cylindrical orcoin-type secondary battery can be used in the electronic device of oneembodiment of the present invention.

As illustrated in FIG. 12A, the battery unit 500 includes a positiveelectrode 503, a negative electrode 506, a separator 507, and anexterior body 509. The battery unit 500 may include a positive electrodelead 510 and a negative electrode lead 511.

FIGS. 13A and 13B each illustrate an example of a cross-sectional viewtaken along dashed-dotted line A1-A2 in FIG. 12A. FIGS. 13A and 13B eachillustrate a cross-sectional structure of the battery unit 500 that isformed using a pair of the positive electrode 503 and the negativeelectrode 506.

As illustrated in FIGS. 13A and 13B, the battery unit 500 includes thepositive electrode 503, the negative electrode 506, the separator 507,an electrolytic solution 508, and the exterior bodies 509. The separator507 is interposed between the positive electrode 503 and the negativeelectrode 506. A space surrounded by the exterior bodies 509 is filledwith the electrolytic solution 508.

The positive electrode 503 includes a positive electrode active materiallayer 502 and a positive electrode current collector 501. The negativeelectrode 506 includes a negative electrode active material layer 505and a negative electrode current collector 504. The active materiallayer can be formed on one or both surfaces of the current collector.The separator 507 is positioned between the positive electrode currentcollector 501 and the negative electrode current collector 504.

The battery unit includes one or more positive electrodes and one ormore negative electrodes. For example, the battery unit can have alayered structure including a plurality of positive electrodes and aplurality of negative electrodes.

FIG. 14A illustrates another example of a cross-sectional view takenalong dashed-dotted line A1-A2 in FIG. 12A. FIG. 14B is across-sectional view taken along dashed-dotted line B1-B2 in FIG. 12A.

FIGS. 14A and 14B each illustrate a cross-sectional structure of thebattery unit 500 that is formed using a plurality of pairs of thepositive and negative electrodes 503 and 506. There is no limitation onthe number of electrode layers of the battery unit 500. In the casewhere a large number of electrode layers are used, the power storagedevice can have high capacity. In contrast, in the case where a smallnumber of electrode layers are used, the power storage device can have asmall thickness and high flexibility.

The examples in FIGS. 14A and 14B each include two positive electrodes503 in each of which the positive electrode active material layer 502 isprovided on one surface of the positive electrode current collector 501;two positive electrodes 503 in each of which the positive electrodeactive material layers 502 are provided on both surfaces of the positiveelectrode current collector 501; and three negative electrodes 506 ineach of which the negative electrode active material layers 505 areprovided on both surfaces of the negative electrode current collector504. In other words, the battery unit 500 includes six positiveelectrode active material layers 502 and six negative electrode activematerial layers 505. Note that although the separator 507 has a bag-likeshape in the examples illustrated in FIGS. 14A and 14B, the presentinvention is not limited to this example and the separator 507 may havea strip shape or a bellows shape.

FIG. 12B illustrates the appearance of the positive electrode 503. Thepositive electrode 503 includes the positive electrode current collector501 and the positive electrode active material layer 502.

FIG. 12C illustrates the appearance of the negative electrode 506. Thenegative electrode 506 includes the negative electrode current collector504 and the negative electrode active material layer 505.

The positive electrode 503 and the negative electrode 506 preferablyinclude tab regions so that a plurality of stacked positive electrodescan be electrically connected to each other and a plurality of stackednegative electrodes can be electrically connected to each other.Furthermore, an electrode lead is preferably electrically connected tothe tab region.

As illustrated in FIG. 12B, the positive electrode 503 preferablyincludes the tab region 281. The positive electrode lead 510 ispreferably welded to part of the tab region 281. The tab region 281preferably includes a region where the positive electrode currentcollector 501 is exposed. When the positive electrode lead 510 is weldedto the region where the positive electrode current collector 501 isexposed, contact resistance can be further reduced. Although FIG. 12Billustrates the example where the positive electrode current collector501 is exposed in the entire tab region 281, the tab region 281 maypartly include the positive electrode active material layer 502.

As illustrated in FIG. 12C, the negative electrode 506 preferablyincludes the tab region 282. The negative electrode lead 511 ispreferably welded to part of the tab region 282. The tab region 282preferably includes a region where the negative electrode currentcollector 504 is exposed. When the negative electrode lead 511 is weldedto the region where the negative electrode current collector 504 isexposed, contact resistance can be further reduced. Although FIG. 12Cillustrates the example where the negative electrode current collector504 is exposed in the entire tab region 282, the tab region 282 maypartly include the negative electrode active material layer 505.

Although FIG. 12A illustrates the example where the ends of the positiveelectrode 503 and the negative electrode 506 are substantially alignedwith each other, part of the positive electrode 503 may extend beyondthe end of the negative electrode 506.

In the battery unit 500, the area of a region where the negativeelectrode 506 does not overlap with the positive electrode 503 ispreferably as small as possible.

In the example illustrated in FIG. 13A, the end of the negativeelectrode 506 is located inward from the end of the positive electrode503. With this structure, the entire negative electrode 506 can overlapwith the positive electrode 503 or the area of the region where thenegative electrode 506 does not overlap with the positive electrode 503can be small.

The areas of the positive electrode 503 and the negative electrode 506in the battery unit 500 are preferably substantially equal. For example,the areas of the positive electrode 503 and the negative electrode 506that face each other with the separator 507 therebetween are preferablysubstantially equal. For example, the areas of the positive electrodeactive material layer 502 and the negative electrode active materiallayer 505 that face each other with the separator 507 therebetween arepreferably substantially equal.

For example, as illustrated in FIGS. 14A and 14B, the area of thepositive electrode 503 on the separator 507 side is preferablysubstantially equal to the area of the negative electrode 506 on theseparator 507 side. When the area of a surface of the positive electrode503 on the negative electrode 506 side is substantially equal to thearea of a surface of the negative electrode 506 on the positiveelectrode 503 side, the region where the negative electrode 506 does notoverlap with the positive electrode 503 can be small (does not exist,ideally), whereby the battery unit 500 can have reduced irreversiblecapacity. Alternatively, as illustrated in FIGS. 14A and 14B, the areaof the surface of the positive electrode active material layer 502 onthe separator 507 side is preferably substantially equal to the area ofthe surface of the negative electrode active material layer 505 on theseparator 507 side.

As illustrated in FIGS. 14A and 14B, the end of the positive electrode503 and the end of the negative electrode 506 are preferablysubstantially aligned with each other. Ends of the positive electrodeactive material layer 502 and the negative electrode active materiallayer 505 are preferably substantially aligned with each other.

In the example illustrated in FIG. 13B, the end of the positiveelectrode 503 is located inward from the end of the negative electrode506. With this structure, the entire positive electrode 503 can overlapwith the negative electrode 506 or the area of the region where thepositive electrode 503 does not overlap with the negative electrode 506can be small. In the case where the end of the negative electrode 506 islocated inward from the end of the positive electrode 503, a currentsometimes concentrates at the end portion of the negative electrode 506.For example, concentration of a current in part of the negativeelectrode 506 results in deposition of lithium on the negative electrode506 in some cases. By reducing the area of the region where the positiveelectrode 503 does not overlap with the negative electrode 506,concentration of a current in part of the negative electrode 506 can beinhibited. As a result, for example, deposition of lithium on thenegative electrode 506 can be inhibited, which is preferable.

As illustrated in FIG. 12A, the positive electrode lead 510 ispreferably electrically connected to the positive electrode 503.Similarly, the negative electrode lead 511 is preferably electricallyconnected to the negative electrode 506. The positive electrode lead 510and the negative electrode lead 511 are exposed to the outside of theexterior body 509 so as to serve as terminals for electrical contactwith an external portion.

The positive electrode current collector 501 and the negative electrodecurrent collector 504 can double as terminals for electrical contactwith an external portion. In that case, the positive electrode currentcollector 501 and the negative electrode current collector 504 may bearranged such that part of the positive electrode current collector 501and part of the negative electrode current collector 504 are exposed tothe outside of the exterior body 509 without using electrode leads.

Although the positive electrode lead 510 and the negative electrode lead511 are provided on the same side of the battery unit 500 in FIG. 12A,the positive electrode lead 510 and the negative electrode lead 511 maybe provided on different sides of the battery unit 500 as illustrated inFIG. 15. The electrode leads of the battery unit of one embodiment ofthe present invention can be freely positioned as described above;therefore, the degree of freedom in design is high. Accordingly, aproduct including the power storage device can have a high degree offreedom in design. Furthermore, a yield of products each including thepower storage device can be increased.

The components of the battery unit will be described in detail below.

<<Current Collector>>

There is no particular limitation on the current collector as long as ithas high conductivity without causing a significant chemical change in apower storage device. For example, the positive electrode currentcollector and the negative electrode current collector can each beformed using a metal such as stainless steel, gold, platinum, zinc,iron, nickel, copper, aluminum, titanium, tantalum, or manganese, analloy thereof, sintered carbon, or the like. Alternatively, copper orstainless steel that is coated with carbon, nickel, titanium, or thelike may be used. Alternatively, the current collectors can each beformed using an aluminum alloy to which an element that improves heatresistance, such as silicon, titanium, neodymium, scandium, ormolybdenum, is added. Still alternatively, a metal element that formssilicide by reacting with silicon can be used to form the currentcollectors. Examples of the metal element that forms silicide byreacting with silicon include zirconium, titanium, hafnium, vanadium,niobium, tantalum, chromium, molybdenum, tungsten, cobalt, and nickel.

An irreversible reaction with an electrolytic solution is sometimescaused on a surface of the positive electrode current collector or asurface of the negative electrode current collector. Thus, the positiveelectrode current collector and the negative electrode current collectoreach preferably have low reactivity with an electrolytic solution.Stainless steel or the like is preferably used for the positiveelectrode current collector or the negative electrode current collector,in which case reactivity with an electrolytic solution can be lowered insome cases, for example.

The positive electrode current collector and the negative electrodecurrent collector can each have any of various shapes including afoil-like shape, a plate-like shape (sheet-like shape), a net-likeshape, a cylindrical shape, a coil shape, a punching-metal shape, anexpanded-metal shape, a porous shape, and a shape of non-woven fabric asappropriate. The positive electrode current collector and the negativeelectrode current collector may each be formed to have microirregularities on the surface thereof in order to enhance adhesion tothe active material layer. The positive electrode current collector andthe negative electrode current collector each preferably have athickness of 5 μm to 30 μm inclusive.

An undercoat layer may be provided over part of a surface of the currentcollector. The undercoat layer is a coating layer provided to reducecontact resistance between the current collector and the active materiallayer or to improve adhesion between the current collector and theactive material layer. Note that the undercoat layer is not necessarilyformed over the entire surface of the current collector and may bepartly formed to have an island-like shape. In addition, the undercoatlayer may serve as an active material to have capacity. For theundercoat layer, a carbon material can be used, for example. Examples ofthe carbon material include carbon black such as acetylene black, acarbon nanotube, and graphite. Examples of the undercoat layer include ametal layer, a layer containing carbon and high molecular compounds, anda layer containing metal and high molecular compounds.

<<Active Material Layer>>

The active material layer includes the active material. An activematerial refers only to a material that is involved in insertion andextraction of ions that are carriers. In this specification and thelike, a layer including the active material is referred to as an activematerial layer. The active material layer may include a conductiveadditive and a binder in addition to the active material.

The positive electrode active material layer includes one or more kindsof positive electrode active materials. The negative electrode activematerial layer includes one or more kinds of negative electrode activematerials.

The positive electrode active material and the negative electrode activematerial have a central role in battery reactions of a power storagedevice, and receive and release carrier ions. To increase the lifetimeof the power storage device, the active materials preferably have alittle capacity involved in irreversible battery reactions, and havehigh charge and discharge efficiency.

For the positive electrode active material, a material into and fromwhich carrier ions such as lithium ions can be inserted and extractedcan be used. Examples of a positive electrode active material includematerials having an olivine crystal structure, a layered rock-saltcrystal structure, a spinel crystal structure, and a NASICON crystalstructure.

As the positive electrode active material, a compound such as LiFeO₂,LiCoO₂, LiNiO₂, or LiMn₂O₄, V₂O₅, Cr₂O₅, or MnO₂ can be used.

As an example of a material having an olivine crystal structure,lithium-containing complex phosphate (LiMPO₄ (general formula) (M is oneor more of Fe(II), Mn(II), Co(II), and Ni(II))) can be given. Typicalexamples of LiMPO₄ are compounds such as LiFePO₄, LiNiPO₄, LiCoPO₄,LiMnPO₄, LiFe_(a)Ni_(b)PO₄, LiFe_(a)Co_(b)PO₄, LiFe_(a)MnbPO₄,LiNi_(a)Co_(b)PO₄, LiNi_(a)Mn_(b)PO₄ (a+b≤1, 0<a<1, and 0<b<1),LiFe_(c)Ni_(d)Co_(e)PO₄, LiFe_(c)Ni_(d)Mn_(e)PO₄,LiNi_(a)Co_(d)Mn_(e)PO₄ (c+d+e≤1, 0<c<1, 0<d<1, and 0<e<1), andLiFe_(f)Ni_(g)Co_(h)Mn_(i)PO₄ (f+g+h+i≤1<, 0<f<1, 0<g<1, 0<h<1, and0<i<1).

For example, lithium iron phosphate (LiFePO₄) is preferable because itproperly has properties necessary for the positive electrode activematerial, such as safety, stability, high capacity density, highpotential, and the existence of lithium ions which can be extracted ininitial oxidation (charging).

The use of LiFePO₄ for the positive electrode active material allowsfabrication of a highly safe power storage device that is stable againstan external load such as overcharging. Such a power storage device isparticularly suitable for, for example, a mobile device, a wearabledevice, and the like.

Examples of a material with a layered rock-salt crystal structureinclude lithium cobalt oxide (LiCoO₂), LiNiO₂, LiMnO₂, Li₂MnO₃, aNiCo-containing material (general formula: LiNi_(x)Co_(1−x)O₂ (0<x<1))such as LiNi_(0.8)Co_(0.2)O₂, a NiMn-containing material (generalformula: LiNi_(x)Mn_(1−x)O₂ (0<x<1)) such as LiNi_(0.5)Mn_(0.5)O₂, aNiMnCo-containing material (also referred to as NMC) (general formula:LiNi_(x)Mn_(y)Co_(1−x−y)O₂ (x>0, y>0, x+y<1)) such asLiNi_(1/3)Mn_(1/3)Co_(1/3)O₂. Moreover,Li(Ni_(0.8)Co_(0.15)Al_(0.05))O₂, Li₂MnO₃—LiMO₂ (M=Co, Ni, or Mn), andthe like can be given as the examples.

In particular, LiCoO₂ is preferable because it has advantages such ashigh capacity, higher stability in the air than that of LiNiO₂, andhigher thermal stability than that of LiNiO₂.

Examples of a material with a spinel crystal structure include LiMn₂O₄,Li_(1+x)Mn_(2−x)O₄ (0<x<2), LiMn_(2−x)Al_(x)O₄ (0<x<2), andLiMn_(1.5)Ni_(0.5)O₄.

It is preferred that a small amount of lithium nickel oxide (LiNiO₂ orLiNi_(1−x)M_(x)O₂ (0<x<1, M=Co, Al, or the like)) be added to a materialwith a spinel crystal structure that contains manganese, such asLiMn₂O₄, in which case advantages such as inhibition of the dissolutionof manganese and the decomposition of an electrolytic solution can beobtained.

Alternatively, a lithium-containing complex silicate expressed byLi_((2−j))MSiO₄ (general formula) (M is one or more of Fe(II), Mn(II),Co(II), or Ni(II); 0≤j≤2) may be used as the positive electrode activematerial. Typical examples of the general formula Li_((2−j))MSiO₄ arecompounds such as Li_((2−j))FeSiO₄, Li_((2−j))NiSiO₄, Li_((2−j))CoSiO₄,Li_((2−j))MnSiO₄, Li_((2−j))Fe_(k)Ni_(l)SiO₄,Li_((2−j))Fe_(k)Co_(l)SiO₄, Li_((2−j))Fe_(k)Mn_(l)SiO₄,Li_((2−j))Ni_(k)CoSiO₄, Li_((2−j))Ni_(k)Mn_(l)SiO₄ (k+l≤1, 0<k<1, and0<l<1), Li_((2−j))Fe_(m)Ni_(n)Co_(q)SiO₄,Li_((2−j))Fe_(m)Ni_(n)Mn_(q)SiO₄, Li_((2−j))Ni_(m)Co_(u)Mn_(q)SiO₄(m+n+q≤1, 0<m<1, 0<n<1, and 0<q<1), andLi_((2−j))Fe_(r)Ni_(s)Co_(t)Mn_(u)SiO₄ (r+s+t+u≤1, 0<r<1, 0<s<1, 0<t<1,and 0<u<1).

Still alternatively, a NASICON compound expressed by A_(x)M₂(XO₄)₃(general formula) (A=Li, Na, or Mg M=Fe, Mn, Ti, V, Nb, or Al, X=S, P,Mo, W, As, or Si) can be used for the positive electrode activematerial. Examples of the NASICON compound are Fe₂(MnO₄)₃, Fe₂(SO₄)₃,and Li₃Fe₂(PO₄)₃.

Further alternatively, for example, a compound expressed by Li₂MPO₄F,Li₂MP₂O₇, or Li₅MO₄ (general formula) (M=Fe or Mn), a perovskitefluoride such as FeF₃, a metal chalcogenide (a sulfide, a selenide, or atelluride) such as TiS₂ and MoS₂, a lithium-containing material with aninverse spinel structure such as LiMVO₄ (M=Mn, Co, or Ni), a vanadiumoxide (V₂O₅, V₆O₁₃, LiV₃O₈, or the like), a manganese oxide, or anorganic sulfur compound can be used as the positive electrode activematerial.

Further alternatively, any of the aforementioned materials may becombined to be used as the positive electrode active material. Forexample, a solid solution obtained by combining two or more of the abovematerials can be used as the positive electrode active material. Forexample, a solid solution of LiCo_(1/3)Mn_(1/3)Ni_(1/3)O₂ and Li₂MnO₃can be used as the positive electrode active material.

In the case where carrier ions are alkali metal ions other than lithiumions, or alkaline-earth metal ions, a compound containing carriers suchas an alkali metal (e.g., sodium and potassium) or an alkaline-earthmetal (e.g., calcium, strontium, barium, beryllium, and magnesium)instead of lithium of the lithium compound, the lithium-containingcomplex phosphate, or the lithium-containing complex silicate may beused as the positive electrode active material.

The average diameter of primary particles of the positive electrodeactive material is preferably, for example, greater than or equal to 5nm and less than or equal to 100 μm.

For example, lithium-containing complex phosphate having an olivinecrystal structure used for the positive electrode active material has aone-dimensional lithium diffusion path, so that lithium diffusion isslow. Thus, in the case where lithium-containing complex phosphatehaving an olivine crystal structure is used, the average diameter ofparticles of the positive electrode active material is, for example,preferably greater than or equal to 5 nm and less than or equal to 1 μmso that the charge and discharge rate is increased. The specific surfacearea of the positive electrode active material is, for example,preferably greater than or equal to 10 m²/g and less than or equal to 50m²/g.

An active material having an olivine crystal structure is much lesslikely to be changed in the crystal structure by charging anddischarging and has a more stable crystal structure than, for example,an active material having a layered rock-salt crystal structure. Thus, apositive electrode active material having an olivine crystal structureis stable against operation such as overcharging. The use of such apositive electrode active material allows fabrication of a highly safepower storage device.

As the negative electrode active material, for example, a carbon-basedmaterial, an alloy-based material, or the like can be used.

Examples of the carbon-based material include graphite, graphitizingcarbon (soft carbon), non-graphitizing carbon (hard carbon), a carbonnanotube, graphene, carbon black, and the like. Examples of the graphiteinclude artificial graphite such as meso-carbon microbeads (MCMB),coke-based artificial graphite, or pitch-based artificial graphite andnatural graphite such as spherical natural graphite. In addition,examples of the shape of the graphite include a flaky shape and aspherical shape.

Graphite has a low potential substantially equal to that of a lithiummetal (higher than or equal to 0.1 V and lower than or equal to 0.3 Vvs. Li/Li′) when lithium ions are intercalated into the graphite (whilea lithium-graphite intercalation compound is formed). For this reason, alithium-ion secondary battery can have a high operating voltage. Inaddition, graphite is preferred because of its advantages such asrelatively high capacity per unit volume, small volume expansion, lowcost, and safety greater than that of a lithium metal.

For example, in the case where carrier ions are lithium ions, a materialincluding at least one of Mg, Ca, Ga, Si, Al, Ge, Sn, Pb, As, Sb, Bi,Ag, Au, Zn, Cd, Hg, In, and the like can be used as the alloy-basedmaterial. Such elements have a higher capacity than carbon. Inparticular, silicon has a high theoretical capacity of 4200 mAh/g, andtherefore, the capacity of the power storage device can be increased.Examples of an alloy-based material (compound-based material) using suchelements include Mg₂Si, Mg₂Ge, Mg₂Sn, SnS₂, V₂Sn₃, FeSn₂, CoSn₂, Ni₃Sn₂,Cu₆Sn₅, Ag₃Sn, Ag₃Sb, Ni₂MnSb, CeSb₃, LaSn₃, La₃Co₂Sn₇, CoSb₃, InSb, andSbSn.

Alternatively, for the negative electrode active material, an oxide suchas SiO, SnO, SnO₂, titanium dioxide (TiO₂), lithium titanium oxide(Li₄Ti₅O₁₂), lithium-graphite intercalation compound (Li_(x)C₆), niobiumpentoxide (Nb₂O₅), tungsten oxide (WO₂), or molybdenum oxide (MoO₂) canbe used. Here, SiO is a compound containing silicon and oxygen. When theatomic ratio of silicon to oxygen is represented by α:β, α preferablyhas an approximate value of β. Here, when a has an approximate value ofβ, an absolute value of the difference between α and β is preferablyless than or equal to 20% of a value of β, more preferably less than orequal to 10% of a value of β.

Still alternatively, for the negative electrode active material,Li_(3−x)M_(x)N (M=Co, Ni, or Cu) with a Li₃N structure, which is anitride containing lithium and a transition metal, can be used. Forexample, Li_(2.6)Co_(0.4)N₃ is preferable because of high charge anddischarge capacity (900 mAh/g and 1890 mAh/cm³).

When a nitride containing lithium and a transition metal is used,lithium ions are contained in the negative electrode active material andthus the negative electrode active material can be used in combinationwith a material for a positive electrode active material that does notcontain lithium ions, such as V₂O₅ or Cr₃O₈. In the case where amaterial containing lithium ions is used as a positive electrode activematerial, the nitride containing lithium and a transition metal can beused for the negative electrode active material by extracting thelithium ions contained in the positive electrode active material inadvance.

Alternatively, a material that causes a conversion reaction can be usedfor the negative electrode active material; for example, a transitionmetal oxide that does not cause an alloy reaction with lithium, such ascobalt oxide (CoO), nickel oxide (NiO), and iron oxide (FeO), may beused. Other examples of the material which causes a conversion reactioninclude oxides such as Fe₂O₃, CuO, Cu₂O, RuO₂, and Cr₂O₃, sulfides suchas CoS_(0.89), NiS, and CuS, nitrides such as Zn₃N₂, Cu₃N, and Ge₃N₄,phosphides such as NiP₂, FeP₂, and CoP₃, and fluorides such as FeF₃ andBiF₃.

The average diameter of primary particles of the negative electrodeactive material is preferably, for example, greater than or equal to 5nm and less than or equal to 100 μm.

The positive electrode active material layer and the negative electrodeactive material layer may each include a conductive additive.

Examples of the conductive additive include a carbon material, a metalmaterial, and a conductive ceramic material. Alternatively, a fibermaterial may be used as the conductive additive. The content of theconductive additive in the active material layer is preferably greaterthan or equal to 1 wt % and less than or equal to 10 wt %, morepreferably greater than or equal to 1 wt % and less than or equal to 5wt %.

A network for electric conduction can be formed in the electrode by theconductive additive. The conductive additive also allows maintaining ofa path for electric conduction between the negative electrode activematerial particles. The addition of the conductive additive to theactive material layer increases the electric conductivity of the activematerial layer.

Examples of the conductive additive include natural graphite, artificialgraphite such as mesocarbon microbeads, and carbon fiber. Examples ofcarbon fiber include mesophase pitch-based carbon fiber, isotropicpitch-based carbon fiber, carbon nanofiber, and carbon nanotube. Carbonnanotube can be formed by, for example, a vapor deposition method. Otherexamples of the conductive additive include carbon materials such ascarbon black (e.g., acetylene black (AB)), graphite (black lead)particles, graphene, and fullerene. Alternatively, metal powder or metalfibers of copper, nickel, aluminum, silver, gold, or the like, aconductive ceramic material, or the like can be used.

Flaky graphene has an excellent electrical characteristic of highconductivity and excellent physical properties of high flexibility andhigh mechanical strength. Thus, the use of graphene as the conductiveadditive can increase electrical conductivity between the activematerials or between the active material and the current collector.

Note that graphene in this specification includes single-layer grapheneand multilayer graphene including two to hundred layers. Single-layergraphene refers to a one-atom-thick sheet of carbon molecules having tbonds. Graphene oxide refers to a compound formed by oxidation of suchgraphene.

Graphene is capable of making low-resistance surface contact and hasextremely high conductivity even with a small thickness. Therefore, evena small amount of graphene can efficiently form a conductive path in anactive material layer.

In the case where an active material with a small average particlediameter (e.g., 1 μm or less) is used, the specific surface area of theactive material is large and thus more conductive paths for the activematerial particles are needed. In such a case, it is particularlypreferred that graphene with extremely high conductivity that canefficiently form a conductive path even in a small amount is used.

The positive electrode active material layer and the negative electrodeactive material layer may each include a binder.

In this specification, the binder has at least one of a function ofbinding or bonding the active materials and a function of binding orbonding the active material layer and the current collector. The binderis sometimes changed in state during fabrication of an electrode or abattery. For example, the binder can be at least one of a liquid, asolid, and a gel. The binder is sometimes changed from a monomer to apolymer during fabrication of an electrode or a battery.

As the binder, for example, a water-soluble high molecular compound canbe used. As the water-soluble high molecular compound, a polysaccharideor the like can be used. As the polysaccharide, a cellulose derivativesuch as carboxymethyl cellulose (CMC), methyl cellulose, ethylcellulose, hydroxypropyl cellulose, diacetyl cellulose, or regeneratedcellulose, starch, or the like can be used.

As the binder, a rubber material such as styrene-butadiene rubber (SBR),styrene-isoprene-styrene rubber, acrylonitrile-butadiene rubber,butadiene rubber, fluororubber, or ethylene-propylene-diene copolymercan be used. Any of these rubber materials may be used in combinationwith the aforementioned water-soluble high molecular compound. Sincethese rubber materials have rubber elasticity and easily expand andcontract, it is possible to obtain a highly reliable electrode that isresistant to stress due to expansion and contraction of an activematerial by charging and discharging, bending of the electrode, or thelike. On the other hand, the rubber materials have a hydrophobic groupand thus are unlikely to be soluble in water in some cases. In such acase, particles are dispersed in an aqueous solution without beingdissolved in water, so that increasing the viscosity of a compositioncontaining a solvent used for the formation of the active material layer(also referred to as an electrode binder composition) up to theviscosity suitable for application might be difficult. A water-solublehigh molecular compound having excellent viscosity modifying properties,such as a polysaccharide, can moderately increase the viscosity of thesolution and can be uniformly dispersed together with a rubber material.Thus, a favorable electrode with high uniformity (e.g., an electrodewith uniform electrode thickness or electrode resistance) can beobtained.

Alternatively, as the binder, a material such as PVdF, polystyrene,poly(methyl acrylate), poly(methyl methacrylate) (polymethylmethacrylate (PMMA)), sodium polyacrylate, polyvinyl alcohol (PVA),polyethylene oxide (PEO), polypropylene oxide, polyimide, polyvinylchloride, polytetrafluoroethylene, polyethylene, polypropylene,isobutylene, polyethylene terephthalate (PET), nylon, polyacrylonitrile(PAN), polyvinyl chloride, ethylene-propylene-diene polymer, polyvinylacetate, or nitrocellulose can be used.

Two or more of the above materials may be used in combination for thebinder.

The content of the binder in the active material layer is preferablygreater than or equal to 1 wt % and less than or equal to 10 wt %, morepreferably greater than or equal to 2 wt % and less than or equal to 8wt %, and still more preferably greater than or equal to 3 wt % and lessthan or equal to 5 wt %.

<<Electrolytic Solution>>

As a solvent of the electrolytic solution 508, an aprotic organicsolvent is preferably used. For example, one of ethylene carbonate (EC),propylene carbonate (PC), butylene carbonate, chloroethylene carbonate,vinylene carbonate (VC), γ-butyrolactone, γ-valerolactone, dimethylcarbonate (DMC), diethyl carbonate (DEC), ethyl methyl carbonate (EMC),methyl formate, methyl acetate, methyl butyrate, 1,3-dioxane,1,4-dioxane, dimethoxyethane (DME), dimethyl sulfoxide, diethyl ether,methyl diglyme, acetonitrile, benzonitrile, tetrahydrofuran, sulfolane,and sultone can be used, or two or more of these solvents can be used inan appropriate combination in an appropriate ratio.

Alternatively, the use of one or more kinds of ionic liquids (roomtemperature molten salts) which have features of non-flammability andnon-volatility as a solvent of the electrolytic solution can prevent apower storage device from exploding or catching fire even when a powerstorage device internally shorts out or the internal temperatureincreases owing to overcharging or the like. An ionic liquid contains acation and an anion. The ionic liquid of one embodiment of the presentinvention contains an organic cation and an anion. Examples of theorganic cation used for the electrolytic solution include aliphaticonium cations such as a quaternary ammonium cation, a tertiary sulfoniumcation, and a quaternary phosphonium cation, and aromatic cations suchas an imidazolium cation and a pyridinium cation. Examples of the anionused for the electrolytic solution include a monovalent amide-basedanion, a monovalent methide-based anion, a fluorosulfonate anion, aperfluoroalkylsulfonate anion, a tetrafluoroborate anion, aperfluoroalkylborate anion, a hexafluorophosphate anion, and aperfluoroalkylpbosphate anion.

In the case where lithium ions are used as carriers, as an electrolytedissolved in the above-described solvent, one of lithium salts such asLiPF₆, LiClO₄, LiAsF₆, LiBF₄, LiAlCl₄, LiSCN, LiBr, LiI, Li₂SO₄,Li₂B₁₀Cl₁₀, Li₂B₁₂Cl₁₂, LiCF₃SO₃, LiC₄F₉SO₃, LiC(CF₃SO₂)₃,LiC(C₂F₅SO₂)₃, LiN(F₃SO₂)₂, LiN(CF₃SO₂)₂, LiN(C₄F₉SO₂) (CF₃SO₂), andLiN(C₂F₅SO₂)₂ can be used, or two or more of these lithium salts can beused in an appropriate combination in an appropriate ratio.

The electrolytic solution used for a power storage device is preferablyhighly purified and contains a small amount of dust particles andelements other than the constituent elements of the electrolyticsolution (hereinafter, also simply referred to as impurities).Specifically, the weight ratio of impurities to the electrolyticsolution is less than or equal to 1%, preferably less than or equal to0.1%, and more preferably less than or equal to 0.01%.

Furthermore, an additive agent such as vinylene carbonate (VC), propanesultone (PS), tert-butylbenzene (TBB), fluoroethylene carbonate (FEC),or LiBOB may be added to the electrolytic solution. The concentration ofsuch an additive agent in the whole solvent can be, for example, higherthan or equal to 0.1 wt % and lower than or equal to 5 wt %.

Alternatively, a polymer gelled electrolyte obtained in such a mannerthat a polymer is swelled with an electrolytic solution may be used.

Examples of a host polymer include a polymer having a polyalkylene oxidestructure, such as polyethylene oxide (PEO); PVdF; polyacrylonitrile;and a copolymer containing any of them. For example, PVdF-HFP, which isa copolymer of PVdF and hexafluoropropylene (HFP) can be used. Thepolymer may be porous.

An electrolytic solution may be gelated by adding a polymerizationinitiator and a cross-linking agent to the electrolytic solution. Forexample, the ionic liquid itself may be polymerized in such a mannerthat a polymerizable functional group is introduced into a cation or ananion of the ionic liquid and polymerization thereof is caused with thepolymerization initiator. Then, the polymerized ionic liquid may begelated with a cross-linking agent.

In combination with the electrolytic solution, a solid electrolyteincluding an inorganic material such as a sulfide-based inorganicmaterial and an oxide-based inorganic material, or a solid electrolyteincluding a macromolecular material such as a polyethylene oxide(PEO)-based macromolecular material may alternatively be used. Forexample, the solid electrolyte may be formed over a surface of theactive material layer. In the case where the solid electrolyte and theelectrolytic solution are used in combination, a separator or a spacerdoes not need to be provided in some cases.

When a macromolecular material that undergoes gelation is used as thesolvent for the electrolytic solution, safety against liquid leakage andthe like is improved. Furthermore, the power storage device can bethinner and more lightweight. For example, a polyethylene oxide-basedpolymer, a polyacrylonitrile-based polymer, a polyvinylidenefluoride-based polymer, a polyacrylate based polymer, and apolymethacrylate-based polymer can be used. A polymer which can gelatethe electrolytic solution at normal temperature (e.g., 25° C.) ispreferably used. Alternatively, a silicone gel may be used. In thisspecification and the like, the term polyvinylidene fluoride-basedpolymer, for example, refers to a polymer including polyvinylidenefluoride (PVdF), and includes a poly(vinylidenefluoride-hexafluoropropylene) copolymer and the like.

The above polymer can be qualitatively analyzed using a Fouriertransform infrared (FT-IR) spectrometer or the like. For example, thepolyvinylidene fluoride-based polymer has an absorption peak showing aC—F bond in a spectrum obtained with the FT-IR spectrometer.Furthermore, the polyacrylonitrile-based polymer has an absorption peakshowing a C≡N bond in a spectrum obtained with the FT-IR spectrometer.

<<Separator>>

As the separator 507, paper, nonwoven fabric, a glass fiber, ceramics, asynthetic fiber such as nylon (polyamide), vinylon (a polyvinyl alcoholbased fiber), polyester, acrylic, polyolefin, or polyurethane, or thelike can be used. The separator 507 may have a single-layer structure ora stacked-layer structure.

More specifically, as a material for the separator 507, any of afluorine-based polymer, polyethers such as polyethylene oxide andpolypropylene oxide, polyolefin such as polyethylene and polypropylene,polyacrylonitrile, polyvinylidene chloride, polymethyl methacrylate,polymethylacrylate, polyvinyl alcohol, polymethacrylonitrile, polyvinylacetate, polyvinylpyrrolidone, polyethyleneimine, polybutadiene,polystyrene, polyisoprene, a polyurethane-based polymer, andpolyphenylene sulfide, derivatives thereof, cellulose, paper, nonwovenfabric, and fiberglass can be used either alone or in combination.

<<Exterior Body>>

It is preferred that the surface of the exterior body 509 that is incontact with the electrolytic solution 508, i.e., the inner surface ofthe exterior body 509, does not react with the electrolytic solution 508significantly. When moisture enters the battery unit 500 from theoutside, a reaction between a component of the electrolytic solution 508or the like and water might occur. Thus, the exterior body 509preferably has low moisture permeability.

As the exterior body 509, a film having a three-layer structure can beused, for example. In the three-layer structure, a highly flexible metalthin film of aluminum, stainless steel, copper, nickel, or the like isprovided over a film formed using polyethylene, polypropylene,polycarbonate, ionomer, polyamide, or the like, and an insulatingsynthetic resin film of a polyamide-based resin, a polyester-basedresin, or the like is provided as the outer surface of the exterior bodyover the metal thin film can be used. With such a three-layer structure,the passage of an electrolytic solution or a gas can be blocked and aninsulating property and resistance to the electrolytic solution can beprovided. The exterior body is folded inside in two, or two exteriorbodies are stacked with the inner surfaces facing each other, in whichcase application of heat melts the materials on the overlapping innersurfaces to cause fusion bonding between the two exterior bodies. Inthis manner, a sealing structure can be formed.

The battery unit 500 can be flexible by using the exterior body 509 withflexibility. When the battery unit has flexibility, it can be used in apower storage device or an electronic device at least part of which isflexible, and the battery unit 500 can be bent as the power storagedevice or electronic device is bent.

Structure Example 2

FIG. 16A is a perspective view of a secondary battery 200 and FIG. 16Bis a top view of the secondary battery 200.

FIG. 17A is a cross-sectional view taken along dashed-dotted line C1-C2in FIG. 16B, and FIG. 17B is a cross-sectional view taken alongdashed-dotted line C3-C4 in FIG. 16B. Note that FIGS. 17A and 17B do notillustrate all components for clarity of the drawings.

The secondary battery 200 includes a positive electrode 211, a negativeelectrode 215, and a separator 203. The secondary battery 200 furtherincludes a positive electrode lead 221, a negative electrode lead 225,and an exterior body 207.

The positive electrode 211 and the negative electrode 215 each include acurrent collector and an active material layer. The positive electrode211 and the negative electrode 215 are provided such that the activematerial layers face each other with the separator 203 providedtherebetween.

One of the electrodes (the positive electrode 211 and the negativeelectrode 215) of the secondary battery 200 that is positioned on theouter diameter side of a curved portion is preferably longer than theother electrode that is positioned on the inner diameter side of thecurved portion, in the direction in which the electrode is curved. Withsuch a structure, ends of the positive electrode 211 and those of thenegative electrode 215 are aligned when the secondary battery 200 iscurved with a certain curvature. That is, the entire region of thepositive electrode active material layer included in the positiveelectrode 211 can face the negative electrode active material layerincluded in the negative electrode 215. Thus, positive electrode activematerials included in the positive electrode 211 can efficientlycontribute to a battery reaction. Therefore, the capacity of thesecondary battery 200 per volume can be increased. Such a structure isparticularly effective in a case where the curvature of the secondarybattery 200 is fixed in using the secondary battery 200.

The positive electrode lead 221 is electrically connected to a pluralityof positive electrodes 211. The negative electrode lead 225 iselectrically connected to a plurality of negative electrodes 215. Thepositive electrode lead 221 and the negative electrode lead 225 eachinclude a sealing layer 220.

The exterior body 207 covers a plurality of positive electrodes 211, aplurality of negative electrodes 215, and a plurality of separators 203.The secondary battery 200 includes an electrolytic solution (not shown)in a region covered with the exterior body 207. Three sides of theexterior body 207 are bonded, whereby the secondary battery 200 issealed.

In FIGS. 17A and 17B, the separators 203 each having a strip-like shapeare used and each pair of the positive electrode 211 and the negativeelectrode 215 sandwich the separator 203; however, one embodiment of thepresent invention is not limited to this structure. One separator sheetmay be folded in zigzag (or into a bellows shape) or wound so that theseparator is positioned between the positive electrode and the negativeelectrode.

An example of a method for fabricating the secondary battery 200 isillustrated in FIGS. 19A to 19D. FIG. 18 is a cross-sectional view takenalong dashed-dotted line C1-C2 in FIG. 16B of the case where thismanufacturing method is employed.

First, the negative electrode 215 is positioned over the separator 203(FIG. 19A) such that the negative electrode active material layer of thenegative electrode 215 overlaps with the separator 203.

Then, the separator 203 is folded to overlap with the negative electrode215. Next, the positive electrode 211 overlaps with the separator 203(FIG. 19B) such that the positive electrode active material layer of thepositive electrode 211 overlaps with the separator 203 and the negativeelectrode active material layer. Note that in the case where anelectrode in which one surface of a current collector is provided withan active material layer is used, the positive electrode active materiallayer of the positive electrode 211 and the negative electrode activematerial layer of the negative electrode 215 are positioned to face eachother with the separator 203 provided therebetween.

In the case where the separator 203 is formed using a material that canbe thermally welded, such as polypropylene, a region where the separator203 overlaps with itself is thermally welded and then another electrodeoverlaps with the separator 203, whereby the slippage of the electrodein the fabrication process can be suppressed. Specifically, a regionwhich does not overlap with the negative electrode 215 or the positiveelectrode 211 and in which the separator 203 overlaps with itself, e.g.,a region denoted as 203 a in FIG. 19B, is preferably thermally welded.

By repeating the above steps, the positive electrode 211 and thenegative electrode 215 can overlap with each other with the separator203 provided therebetween as illustrated in FIG. 19C.

Note that a plurality of positive electrodes 211 and a plurality ofnegative electrodes 215 may be placed to be alternately sandwiched bythe separator 203 that is repeatedly folded in advance.

Then, as illustrated in FIG. 19C, a plurality of positive electrodes 211and a plurality of negative electrodes 215 are covered with theseparator 203.

Furthermore, the region where the separator 203 overlaps with itself,e.g., a region 203 b in FIG. 19D, is thermally welded as illustrated inFIG. 19D, whereby a plurality of positive electrodes 211 and a pluralityof negative electrodes 215 are covered with and tied with the separator203.

Note that a plurality of positive electrodes 211, a plurality ofnegative electrodes 215, and the separator 203 may be tied with abinding material.

Since the positive electrodes 211 and the negative electrodes 215 arestacked in the above process, one separator 203 has a region sandwichedbetween the positive electrode 211 and the negative electrode 215 and aregion covering a plurality of positive electrodes 211 and a pluralityof negative electrodes 215.

In other words, the separator 203 included in the secondary battery 200in FIG. 18 and FIG. 19D is a single separator which is partly folded. Inthe folded regions of the separator 203, a plurality of positiveelectrodes 211 and a plurality of negative electrodes 215 are provided.

Structure Example 3

FIG. 20A is a perspective view of a secondary battery 250 and FIG. 20Bis a top view of the secondary battery 250. Furthermore, FIG. 20C1 is across-sectional view of a first electrode assembly 230 and FIG. 20C2 isa cross-sectional view of a second electrode assembly 231.

The secondary battery 250 includes the first electrode assembly 230, thesecond electrode assembly 231, and the separator 203. The secondarybattery 250 further includes the positive electrode lead 221, thenegative electrode lead 225, and the exterior body 207.

As illustrated in FIG. 20C1, in the first electrode assembly 230, apositive electrode 211 a, the separator 203, a negative electrode 215 a,the separator 203, and the positive electrode 211 a are stacked in thisorder. The positive electrode 211 a and the negative electrode 215 aeach include active material layers on both surfaces of a currentcollector.

As illustrated in FIG. 20C2, in the second electrode assembly 231, anegative electrode 215 a, the separator 203, the positive electrode 211a, the separator 203, and the negative electrode 215 a are stacked inthis order. The positive electrode 211 a and the negative electrode 215a each include active material layers on both surfaces of a currentcollector.

In other words, in each of the first electrode assembly 230 and thesecond electrode assembly 231, the positive electrode and the negativeelectrode are provided such that the active material layers face eachother with the separator 203 provided therebetween.

The positive electrode lead 221 is electrically connected to a pluralityof positive electrodes 211. The negative electrode lead 225 iselectrically connected to a plurality of negative electrodes 215. Thepositive electrode lead 221 and the negative electrode lead 225 eachinclude the sealing layer 220.

FIG. 21 is an example of a cross-sectional view taken alongdashed-dotted line C3-C4 in FIG. 20B. Note that FIG. 21 does notillustrate all components for clarity of the drawings.

As illustrated in FIG. 21, the secondary battery 250 has a structure inwhich a plurality of first electrode assemblies 230 and a plurality ofsecond electrode assemblies 231 are covered with the wound separator203.

The exterior body 207 covers a plurality of first electrode assemblies230, a plurality of second electrode assemblies 231, and the separator203. The secondary battery 200 includes an electrolytic solution (notshown) in a region covered with the exterior body 207. Three sides ofthe exterior body 207 are bonded, whereby the secondary battery 200 issealed.

An example of a method for fabricating the secondary battery 250 isillustrated in FIGS. 22A to 22D.

First, the first electrode assembly 230 is positioned over the separator203 (FIG. 22A).

Then, the separator 203 is folded to overlap with the first electrodeassembly 230. After that, two second electrode assemblies 231 arepositioned over and under the first electrode assembly 230 with theseparator 203 positioned between each of the second electrode assemblies231 and the first electrode assembly 230 (FIG. 22B).

Then, the separator 203 is wound to cover the two second electrodeassemblies 231. Moreover, two first electrode assemblies 230 arepositioned over and under the two second electrode assemblies 231 withthe separator 203 positioned between each of the first electrodeassemblies 230 and each of the second electrode assemblies 231 (FIG.22C).

Then, the separator 203 is wound to cover the two first electrodeassemblies 230 (FIG. 22D).

Since a plurality of first electrode assemblies 230 and a plurality ofsecond electrode assemblies 231 are stacked in the above process, theseelectrode assemblies are each positioned surrounded with the spirallywound separator 203.

Note that the outermost electrode preferably does not include an activematerial layer on the outer side.

Although FIGS. 20C1 and 20C2 each illustrate a structure in which theelectrode assembly includes three electrodes and two separators, oneembodiment of the present invention is not limited to this structure.The electrode assembly may include four or more electrodes and three ormore separators. A larger number of electrodes lead to higher capacityof the secondary battery 250. Alternatively, the electrode assembly mayinclude two electrodes and one separator. A smaller number of electrodesenable higher resistance of the secondary battery against bending.Although FIG. 21 illustrates the structure in which the secondarybattery 250 includes three first electrode assemblies 230 and two secondelectrode assemblies 231, one embodiment of the present invention is notlimited to this structure. The number of the electrode assemblies may beincreased. A larger number of electrode assemblies lead to highercapacity of the secondary battery 250. The number of the electrodeassemblies may be decreased. A smaller number of electrode assembliesenable higher resistance of the secondary battery against bending.

FIG. 23 illustrates another example of a cross-sectional view takenalong dashed-dotted line C3-C4 in FIG. 20B. As illustrated in FIG. 23,the separator 203 may be folded into a bellows shape so that theseparator 203 is positioned between the first electrode assembly 230 andthe second electrode assembly 231.

This embodiment can be combined with any other embodiment asappropriate.

Embodiment 3

In this embodiment, a light-emitting device that can be used for theelectronic device of one embodiment of the present invention isdescribed with reference to drawings. Although a light-emitting devicemainly including an organic EL element is described in this embodimentas an example, one embodiment of the present invention is not limited tothis example.

Structure Example 1

FIG. 24A is a plan view of a light-emitting device, and FIG. 24B is anexample of a cross-sectional view taken along dashed-dotted line D1-D2in FIG. 24A. The light-emitting device in Structure example 1 is atop-emission light-emitting device using a color filter method. In thisembodiment, the light-emitting device can have a structure in whichsubpixels of three colors of red (R), green (G), and blue (B), forexample, express one color a structure in which subpixels of four colorsof R, G, B, and white (W) express one color, a structure in whichsubpixels of four colors of R, G, B, and yellow (Y) express one color,or the like. There is no particular limitation on color elements, andcolors other than R, G, B, W, and Y may be used. For example, cyan ormagenta may be used.

The light-emitting device illustrated in FIG. 24A includes alight-emitting portion 804, a driver circuit portion 806, and an FPC808.

The light-emitting device illustrated in FIG. 24B includes a flexiblesubstrate 701, a bonding layer 703, an insulating layer 705, a pluralityof transistors, a conductive layer 857, an insulating layer 815, aninsulating layer 817, a plurality of light-emitting elements, aninsulating layer 821, a bonding layer 822, a coloring layer 845, alight-blocking layer 847, an insulating layer 715, a bonding layer 713,and a flexible substrate 711. The bonding layer 822, the insulatinglayer 715, the bonding layer 713, and the flexible substrate 711transmit visible light. Light-emitting elements and transistors in thelight-emitting portion 804 and the driver circuit portion 806 are sealedwith the flexible substrate 701, the flexible substrate 711, and thebonding layer 822.

In the light-emitting portion 804, a transistor 820 and a light-emittingelement 830 are provided over the flexible substrate 701 with thebonding layer 703 and the insulating layer 705 placed therebetween. Thelight-emitting element 830 includes a lower electrode 831 over theinsulating layer 817, an EL layer 833 over the lower electrode 831, andan upper electrode 835 over the EL layer 833. The lower electrode 831 iselectrically connected to a source electrode or a drain electrode of thetransistor 820. An end portion of the lower electrode 831 is coveredwith the insulating layer 821. The lower electrode 831 preferablyreflects visible light. The upper electrode 835 transmits visible light.

In the light-emitting portion 804, the coloring layer 845 overlappingwith the light-emitting element 830 and the light-blocking layer 847overlapping with the insulating layer 821 are provided. The spacebetween the light-emitting element 830 and the coloring layer 845 isfilled with the bonding layer 822.

The insulating layer 815 has an effect of suppressing diffusion ofimpurities into a semiconductor included in the transistor. As theinsulating layer 817, an insulating layer having a planarizationfunction is preferably selected in order to reduce surface unevennessdue to the transistor. In the case where an organic material is used forthe insulating layer 817, an impurity such as moisture might enter fromthe outside of the light-emitting device to the transistor, thelight-emitting element 830, or the like through the insulating layer 817which is exposed at an end portion of the light-emitting device. Thedeterioration of the transistor or the light-emitting element 830 due tothe entry of an impurity leads to the deterioration of thelight-emitting device. Thus, as illustrated in FIG. 24B and the like, itis preferable that an opening which reaches an inorganic film (here, theinsulating layer 815) be formed in the insulating layer 817 so that animpurity such as moisture entering from the outside of thelight-emitting device does not easily reach the transistor or thelight-emitting element 830. Note that the insulating layer 817 is notnecessarily formed at the end portion of the light-emitting device.

In the driver circuit portion 806, a plurality of transistors areprovided over the flexible substrate 701 with the bonding layer 703 andthe insulating layer 705 positioned therebetween. FIG. 24B illustratesone of the transistors included in the driver circuit portion 806.

The insulating layer 705 and the flexible substrate 701 are attached toeach other with the bonding layer 703. The insulating layer 715 and theflexible substrate 711 are attached to each other with the bonding layer713. At least one of the insulating layer 705 and the insulating layer715 is preferably highly resistant to moisture, in which case impuritiessuch as water can be prevented from entering the light-emitting element830 or the transistor 820, leading to higher reliability of thelight-emitting device.

The conductive layer 857 is electrically connected to an external inputterminal through which a signal or a potential from the outside istransmitted to the driver circuit portion 806. Here, an example in whichthe FPC 808 is provided as the external input terminal is described. Toprevent an increase in the number of fabrication steps, the conductivelayer 857 is preferably formed using the same material and the same stepas the electrode or the wiring in the light-emitting portion or thedriver circuit portion. Here, an example is described in which theconductive layer 857 is formed using the same material and the same stepas the electrodes of the transistor 820.

In the light-emitting device in FIG. 24B, the FPC 808 is positioned overthe flexible substrate 711. A connector 825 is connected to theconductive layer 857 through an opening provided in the flexiblesubstrate 711, the bonding layer 713, the insulating layer 715, thebonding layer 822, the insulating layer 817, and the insulating layer815. Furthermore, the connector 825 is connected to the FPC 808. Thatis, the FPC 808 and the conductive layer 857 are electrically connectedto each other through the connector 825. When the conductive layer 857and the flexible substrate 711 overlap with each other, an openingformed in the flexible substrate 711 (or the use of a substrate with anopening) allows the conductive layer 857, the connector 825, and the FPC808 to be electrically connected to each other.

A modification example of the light-emitting device illustrated in FIGS.24A and 24B will be described. FIG. 25A is a plan view of alight-emitting device, and FIG. 25B is an example of a cross-sectionalview taken along dashed-dotted line D3-D4 in FIG. 25A. FIG. 26A is anexample of a cross-sectional view taken along dashed-dotted line D5-D6in FIG. 25A.

The light-emitting device illustrated in FIGS. 25A and 25B shows anexample in which the flexible substrate 701 and the flexible substrate711 have different sizes. The FPC 808 is positioned over the insulatinglayer 715 and does not overlap with the flexible substrate 711. Theconnector 825 is connected to the conductive layer 857 through anopening provided in the insulating layer 715, the bonding layer 822, theinsulating layer 817, and the insulating layer 815. There is nolimitation on the material for the flexible substrate 711 because anopening does not need to be provided in the flexible substrate 711.

It is preferred that the insulating layer formed using an organic resinhaving a poor gas barrier property or a poor moisture-resistant propertynot be exposed in an end portion of the light-emitting device. With sucha structure, entry of impurities from the side surface of thelight-emitting device can be prevented. For example, as illustrated inFIG. 25D and FIG. 26A, the structure in which the insulating layer 817is not provided in the end portion of the light-emitting device may beemployed.

FIG. 26B shows a modification example of the light-emitting portion 804.

The light-emitting device illustrated in FIG. 26B includes insulatinglayers 817 a and 817 b and a conductive layer 856 over the insulatinglayer 817 a. The source electrode or the drain electrode of thetransistor 820 and the lower electrode of the light-emitting element 830are electrically connected to each other through the conductive layer856.

The light-emitting device illustrated in FIG. 26B includes a spacer 823over the insulating layer 821. The spacer 823 can adjust the distancebetween the flexible substrate 701 and the flexible substrate 711.

The light-emitting device in FIG. 26B includes an overcoat 849 coveringthe coloring layer 845 and the light-blocking layer 847. The spacebetween the light-emitting element 830 and the overcoat 849 is filledwith the bonding layer 822.

FIG. 26C shows a modification example of the light-emitting element 830.

Note that as illustrated in FIG. 26C, the light-emitting element 830 mayinclude an optical adjustment layer 832 between the lower electrode 831and the EL layer 833. A light-transmitting conductive material ispreferably used for the optical adjustment layer 832. Owing to thecombination of a color filter (the coloring layer) and a microcavitystructure (the optical adjustment layer), light with high color puritycan be extracted from the light-emitting device of one embodiment of thepresent invention. The thickness of the optical adjustment layer isvaried depending on the emission color of the subpixel.

Structure Example 2

A light-emitting device illustrated in FIG. 26D includes the flexiblesubstrate 701, the bonding layer 703, the insulating layer 705, aconductive layer 814, a conductive layer 857 a, a conductive layer 857b, the light-emitting element 830, the insulating layer 821, the bondinglayer 713, and the flexible substrate 711.

The conductive layer 857 a and the conductive layer 857 b serve asexternal connection electrodes of the light-emitting device and can eachbe electrically connected to an FPC or the like.

The light-emitting element 830 includes the lower electrode 831, the ELlayer 833, and the upper electrode 835. An end portion of the lowerelectrode 831 is covered with the insulating layer 821. Thelight-emitting element 830 has a bottom-emission structure, atop-emission structure, or a dual-emission structure. The electrode,substrate, insulating layer, and the like through which light isextracted transmit visible light. The conductive layer 814 iselectrically connected to the lower electrode 831.

The substrate through which light is extracted may have, as a lightextraction structure, a hemispherical lens, a micro lens array, a filmprovided with an uneven surface structure, a light diffusing film, orthe like. For example, the substrate with the light extraction structurecan be formed by bonding the above lens or film to a resin substratewith an adhesive or the like having substantially the same refractiveindex as the substrate, the lens, or the film.

The conductive layer 814 is preferably, though not necessarily, providedbecause voltage drop due to the resistance of the lower electrode 831can be inhibited. In addition, for a similar purpose, a conductive layerelectrically connected to the upper electrode 835 may be provided overthe insulating layer 821, the EL layer 833, the upper electrode 835, orthe like.

The conductive layer 814 can be a single layer or a stacked layer formedusing a material selected from copper, titanium, tantalum, tungsten,molybdenum, chromium, neodymium, scandium, nickel, and aluminum, analloy material containing any of these materials as its main component,and the like. The thickness of the conductive layer 814 can be, forexample, greater than or equal to 0.1 μm and less than or equal to 3 μm,preferably greater than or equal to 0.1 μm and less than or equal to 0.5μm.

Structure Example 3

FIG. 25A is a plan view of a light-emitting device. FIG. 27A is anexample of a cross-sectional view taken along dashed-dotted line D3-D4in FIG. 25A. The light-emitting device in Structure example 3 is abottom-emission light-emitting device using a color filter method.

The light-emitting device illustrated in FIG. 27A includes the flexiblesubstrate 701, the bonding layer 703, the insulating layer 705, aplurality of transistors, the conductive layer 857, the insulating layer815, the coloring layer 845, the insulating layer 817 a, the insulatinglayer 817 b, the conductive layer 856, a plurality of light-emittingelements, the insulating layer 821, the bonding layer 713, and theflexible substrate 711. The flexible substrate 701, the bonding layer703, the insulating layer 705, the insulating layer 815, the insulatinglayer 817 a, and the insulating layer 817 b transmit visible light.

In the light-emitting portion 804, the transistor 820, a transistor 824,and the light-emitting element 830 are provided over the flexiblesubstrate 701 with the bonding layer 703 and the insulating layer 705positioned therebetween. The light-emitting element 830 includes thelower electrode 831 over the insulating layer 817 b, the EL layer 833over the lower electrode 831, and the upper electrode 835 over the ELlayer 833. The lower electrode 831 is electrically connected to thesource electrode or the drain electrode of the transistor 820. An endportion of the lower electrode 831 is covered with the insulating layer821. The upper electrode 835 preferably reflects visible light. Thelower electrode 831 transmits visible light. There is no particularlimitation on the position of the coloring layer 845 overlapping withthe light-emitting element 830; for example, the coloring layer 845 canbe provided between the insulating layer 817 a and the insulating layer817 b or between the insulating layer 815 and the insulating layer 817a.

In the driver circuit portion 806, a plurality of transistors areprovided over the flexible substrate 701 with the bonding layer 703 andthe insulating layer 705 positioned therebetween. FIG. 27A illustratestwo of the transistors in the driver circuit portion 806.

The insulating layer 705 and the flexible substrate 701 are attached toeach other with the bonding layer 703. The insulating layer 705 ispreferably highly resistant to moisture, in which case impurities suchas water can be prevented from entering the light-emitting element 830,the transistor 820, or the transistor 824, leading to higher reliabilityof the light-emitting device.

The conductive layer 857 is electrically connected to an external inputterminal through which a signal or a potential from the outside istransmitted to the driver circuit portion 806. In this example, the FPC808 is provided as the external input terminal, and the conductive layer857 is formed using the same material and the same step as theconductive layer 856.

Structure Example 4

FIG. 25A is a plan view of a light-emitting device. FIG. 27B is anexample of a cross-sectional view taken along dashed-dotted line D3-D4in FIG. 25A. The light-emitting device in Structure example 4 is atop-emission light-emitting device using a separate coloring method.

The light-emitting device in FIG. 27B includes the flexible substrate701, the bonding layer 703, the insulating layer 705, a plurality oftransistors, the conductive layer 857, the insulating layer 815, theinsulating layer 817, a plurality of light-emitting elements, theinsulating layer 821, the spacer 823, the bonding layer 713, and theflexible substrate 711. The bonding layer 713 and the flexible substrate711 transmit visible light.

In the light-emitting device illustrated in FIG. 27B, the connector 825is positioned over the insulating layer 815. The connector 825 isconnected to the conductive layer 857 through an opening provided in theinsulating layer 815. The connector 825 is also connected to the FPC808. That is, the FPC 808 and the conductive layer 857 are electricallyconnected to each other through the connector 825.

Examples of Materials

Next, materials that can be used for the light-emitting device will bedescribed. Note that description of the components already described inthis specification is omitted in some cases.

For the substrates, glass, quartz, an organic resin, a metal, an alloy,a semiconductor, or the like can be used. The substrate through whichlight from the light-emitting element is extracted is formed using amaterial that transmits the light.

It is particularly preferable to use a flexible substrate. For example,it is possible to use glass, a metal, or an alloy that is thin enough tohave flexibility, or an organic resin. For example, the thickness of theflexible substrate is preferably greater than or equal to 1 μm and lessthan or equal to 200 μm, further preferably greater than or equal to 1μm and less than or equal to 100 μm, still further preferably greaterthan or equal to 10 μm and less than or equal to 50 μm, and particularlypreferably greater than or equal to 10 μm and less than or equal to 25μm.

An organic resin, which has a smaller specific gravity than glass, ispreferably used for the flexible substrate, in which case thelight-emitting device can be lighter in weight than that using glass.

A material with high toughness is preferably used for the substrates. Inthat case, a light-emitting device with high impact resistance that isless likely to be broken can be provided. For example, when an organicresin substrate or a metal or alloy substrate with a small thickness isused, the light-emitting device can be lightweight and less likely to bebroken as compared with the case where a glass substrate is used.

A metal material and an alloy material, which have high thermalconductivity, are preferred because they can easily conduct heat to thewhole substrate and accordingly can prevent a local temperature rise inthe light-emitting device. The thickness of a substrate using a metalmaterial or an alloy material is preferably greater than or equal to 10μm and less than or equal to 200 μm, further preferably greater than orequal to 20 μm and less than or equal to 50 μm.

Although there is no particular limitation on a material for the metalsubstrate or the alloy substrate, it is preferable to use, for example,aluminum, copper, nickel, or a metal alloy such as an aluminum alloy orstainless steel. Examples of a material for a semiconductor substrateinclude silicon and the like.

Furthermore, when a material with high thermal emissivity is used forthe substrate, the surface temperature of the light-emitting device canbe prevented from rising, leading to prevention of breakage or adecrease in reliability of the light-emitting device. For example, thesubstrate may have a stacked-layer structure of a metal substrate and alayer with high thermal emissivity (e.g., a layer formed using a metaloxide or a ceramic material).

Examples of a material having flexibility and a light-transmittingproperty include polyester resins such as polyethylene terephthalate(PET) and polyethylene naphthalate (PEN), a polyacrylonitrile resin, apolyimide resin, a polymethyl methacrylate resin, a polycarbonate (PC)resin, a polyethersulfone (PES) resin, a polyamide resin (e.g., nylon oraramid), a cycloolefin resin, a polystyrene resin, a polyamide imideresin, a polyvinyl chloride resin, and a polytetrafluoroethylene (PTFE)resin. In particular, a material with a low coefficient of linearexpansion is preferred, and for example, a polyamide imide resin, apolyimide resin, a polyamide resin, or PET can be suitably used. It isalso possible to use a substrate in which a fibrous body is impregnatedwith a resin (also referred to as prepreg) or a substrate whosecoefficient of linear expansion is reduced by mixing an organic resinwith an inorganic filler.

The flexible substrate may have a stacked-layer structure of a layer ofany of the above-mentioned materials and a hard coat layer by which asurface of the device is protected from damage (e.g., a silicon nitridelayer), a layer that can disperse pressure (e.g., an aramid resinlayer), or the like.

The flexible substrate may be formed by stacking a plurality of layers.When a glass layer is used, a barrier property against water or oxygencan be improved and thus a reliable light-emitting device can beprovided.

For example, it is possible to use a flexible substrate in which a glasslayer, a bonding layer, and an organic resin layer are stacked from theside closer to a light-emitting element. The thickness of the glasslayer is greater than or equal to 20 μm and less than or equal to 200μm, preferably greater than or equal to 25 μm and less than or equal to100 μm. With such a thickness, the glass layer can have both highflexibility and a high barrier property against water or oxygen. Thethickness of the organic resin layer is greater than or equal to 10 μmand less than or equal to 200 μm, preferably greater than or equal to 20μm and less than or equal to 50 μm. Providing such an organic resinlayer, occurrence of a crack or a break in the glass layer can besuppressed and mechanical strength can be improved. With the substrateusing such a composite material of a glass material and an organicresin, a flexible light-emitting device with high reliability can beprovided.

For the bonding layer, various curable adhesives such as a photo curableadhesive (e.g., an ultraviolet curable adhesive), a reactive curableadhesive, a thermosetting adhesive, and an anaerobic adhesive can beused. Alternatively, an adhesive sheet or the like may be used.

Further, the bonding layer may include a drying agent. For example, itis possible to use a substance that adsorbs moisture by chemicaladsorption, such as oxide of an alkaline earth metal (e.g., calciumoxide or barium oxide). Alternatively, it is possible to use a substancethat adsorbs moisture by physical adsorption, such as zeolite or silicagel. The drying agent is preferably included because it can preventimpurities such as moisture from entering the functional element,thereby improving the reliability of the light-emitting device.

When a filler with a high refractive index or a light scattering memberis contained in the bonding layer, the efficiency of light extractionfrom the light-emitting element can be improved. For example, titaniumoxide, barium oxide, zeolite, or zirconium can be used.

Insulating films highly resistant to moisture are preferably used as theinsulating layer 705 and the insulating layer 715. Alternatively, theinsulating layer 705 and the insulating layer 715 each preferably have afunction of preventing diffusion of impurities to the light-emittingelement.

Examples of the insulating film highly resistant to moisture include afilm containing nitrogen and silicon (e.g., a silicon nitride film and asilicon nitride oxide film) and a film containing nitrogen and aluminum(e.g., an aluminum nitride film). Alternatively, a silicon oxide film, asilicon oxynitride film, an aluminum oxide film, or the like may beused.

For example, the moisture vapor transmission rate of the insulating filmhighly resistant to moisture is lower than or equal to 1×10⁻⁵[g/(m²·day)], preferably lower than or equal to 1×10⁻⁶ [g/(m⁻²·day)],further preferably lower than or equal to 1×10⁻⁷ [g/(m²·day)], stillfurther preferably lower than or equal to 1×10⁻⁸ [g/(m²·day)].

In the light-emitting device, it is necessary that at least one of theinsulating layer 705 and the insulating layer 715 transmit light emittedfrom the light-emitting element. One of the insulating layer 705 and theinsulating layer 715, which transmits light emitted from thelight-emitting element, preferably has higher average transmittance oflight having a wavelength greater than or equal to 400 nm and less thanor equal to 800 nm than the other.

There is no particular limitation on the structure of the transistors inthe light-emitting device. For example, a forward staggered transistoror an inverted staggered transistor may be used. A top-gate transistoror a bottom-gate transistor may be used. There is no particularlimitation on a semiconductor material used for the transistors, andsilicon, germanium, or an organic semiconductor can be used, forexample. Alternatively, an oxide semiconductor containing at least oneof indium, gallium, and zinc (e.g., In—Ga—Zn-based metal oxide) may beused.

There is no particular limitation on the crystallinity of asemiconductor material used for the transistors, and an amorphoussemiconductor or a semiconductor having crystallinity (amicrocrystalline semiconductor, a polycrystalline semiconductor, asingle crystal semiconductor, or a semiconductor partly includingcrystal regions) may be used. A semiconductor having crystallinity ispreferably used, in which case deterioration of the transistorcharacteristics can be suppressed.

In one embodiment of the present invention, a c-axis aligned crystallineoxide semiconductor (CAAC-OS) is preferably used as a semiconductormaterial for the transistors. Unlike amorphous semiconductor, theCAAC-OS has few defect states, so that the reliability of the transistorcan be improved. Moreover, since the CAAC-OS does not have a grainboundary, a stable and uniform film can be formed over a large area, andstress that is caused by bending a flexible light-emitting device doesnot easily make a crack in a CAAC-OS film.

A CAAC-OS is a crystalline oxide semiconductor having c-axis alignmentof crystals in a direction substantially perpendicular to the filmsurface. It has been found that oxide semiconductors have a variety ofcrystal structures other than a single crystal structure. An example ofsuch structures is a nano-crystal (nc) structure, which is an aggregateof nanoscale microcrystals. The crystallinity of a CAAC-OS structure islower than that of a single crystal structure and higher than that of annc structure.

For stable characteristics of the transistor, a base film is preferablyprovided. The base film can be formed with a single-layer structure or astacked-layer structure using an inorganic insulating film such as asilicon oxide film, a silicon nitride film, a silicon oxynitride film,or a silicon nitride oxide film. The base film can be formed by asputtering method, a chemical vapor deposition (CVD) method (e.g., aplasma CVD method, a thermal CVD method, or a metal organic CVD (MOCVD)method), an atomic layer deposition (ALD) method, a coating method, aprinting method, or the like. Note that the base film is not necessarilyprovided. In each of the above structure examples, the insulating layer705 can serve as a base film of the transistor.

As the light-emitting element, a self-luminous element can be used, andan element whose luminance is controlled by current or voltage isincluded in the category of the light-emitting element. For example, alight-emitting diode (LED), an organic EL element, or an inorganic ELelement can be used.

The light-emitting element can have any of a top-emission structure, abottom-emission structure, and a dual-emission structure. A conductivefilm that transmits visible light is used as the electrode through whichlight is extracted. A conductive film that reflects visible light ispreferably used as the electrode through which light is not extracted.

The conductive film that transmits visible light can be formed using,for example, indium oxide, indium tin oxide (ITO), indium zinc oxide,zinc oxide (ZnO), or zinc oxide to which gallium is added. It is alsopossible to use a film of a metal material such as gold, silver,platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron,cobalt, copper, palladium, or titanium; an alloy containing any of thesemetal materials; or a nitride of any of these metal materials (e.g.,titanium nitride) when the film is thin enough to have alight-transmitting property. Alternatively, a stack of any of the abovematerials can be used as the conductive film. For example, a stackedfilm of ITO and an alloy of silver and magnesium is preferably used, inwhich case conductivity can be increased. Further alternatively,graphene or the like may be used.

For the conductive film that reflects visible light, a metal materialsuch as aluminum, gold, platinum, silver, nickel, tungsten, chromium,molybdenum, iron, cobalt, copper, or palladium or an alloy containingany of these metal materials can be used, for example. Lanthanum,neodymium, germanium, or the like may be added to the metal material orthe alloy. Moreover, the conductive film can be formed using an alloycontaining aluminum (an aluminum alloy) such as an alloy of aluminum andtitanium, an alloy of aluminum and nickel, an alloy of aluminum andneodymium, or an alloy of aluminum, nickel, and lanthanum (Al—Ni—La), oran alloy containing silver such as an alloy of silver and copper, analloy of silver, palladium, and copper (Ag—Pd—Cu, also referred to asAPC), or an alloy of silver and magnesium. An alloy of silver and copperis preferable because of its high heat resistance. When a metal film ora metal oxide film is stacked on an aluminum alloy film, oxidation ofthe aluminum alloy film can be suppressed. Examples of a material forthe metal film or the metal oxide film are titanium and titanium oxide.Alternatively, the conductive film having a property of transmittingvisible light and a film containing any of the above metal materials maybe stacked. For example, it is possible to use a stacked film of silverand ITO or a stacked film of an alloy of silver and magnesium and ITO.

Each of the electrodes can be formed by an evaporation method or asputtering method. Alternatively, a discharging method such as anink-jet method, a printing method such as a screen printing method, or aplating method can be used.

When a voltage higher than the threshold voltage of the light-emittingelement is applied between the lower electrode 831 and the upperelectrode 835, holes are injected to the EL layer 833 from the anodeside and electrons are injected to the EL layer 833 from the cathodeside. The injected electrons and holes are recombined in the EL layer833 and a light-emitting substance contained in the EL layer 833 emitslight.

The EL layer 833 includes at least a light-emitting layer. In additionto the light-emitting layer, the EL layer 833 may further include one ormore layers containing any of a substance with a high hole-injectionproperty, a substance with a high hole-transport property, ahole-blocking material, a substance with a high electron-transportproperty, a substance with a high electron-injection property, asubstance with a bipolar property (a substance with a highelectron-transport property and a high hole-transport property), and thelike.

For the EL layer 833, either a low molecular compound or a highmolecular compound can be used, and an inorganic compound may be used.Each of the layers included in the EL layer 833 can be formed by any ofthe following methods: an evaporation method (including a vacuumevaporation method), a transfer method, a printing method, an ink-jetmethod, a coating method, and the like.

The light-emitting element 830 may contain two or more kinds oflight-emitting substances. Thus, for example, a light-emitting elementthat emits white light can be achieved. For example, light-emittingsubstances are selected so that two or more kinds of light-emittingsubstances emit complementary colors to obtain white light emission. Alight-emitting substance that emits red (R) light, green (G) light, blue(B) light, yellow (Y) light, or orange (O) light or a light-emittingsubstance that emits light containing spectral components of two or moreof R light, G light, and B light can be used, for example. Alight-emitting substance that emits blue light and a light-emittingsubstance that emits yellow light may be used, for example. At thistime, the emission spectrum of the light-emitting substance that emitsyellow light preferably contains spectral components of G light and Rlight. The emission spectrum of the light-emitting element 830preferably has two or more peaks in the visible region (e.g., greaterthan or equal to 350 nm and less than or equal to 750 nm or greater thanor equal to 400 nm and less than or equal to 800 nm).

The EL layer 833 may include a plurality of light-emitting layers. Inthe EL layer 833, the plurality of light-emitting layers may be stackedin contact with one another or may be stacked with a separation layerprovided therebetween. The separation layer may be provided between afluorescent layer and a phosphorescent layer, for example.

The separation layer can be provided, for example, to prevent energytransfer by the Dexter mechanism (particularly triplet energy transfer)from a phosphorescent material in an excited state which is generated inthe phosphorescent layer to a fluorescent material in the fluorescentlayer. The thickness of the separation layer may be several nanometers.Specifically, the thickness of the separation layer may be greater thanor equal to 0.1 nm and less than or equal to 20 nm, greater than orequal to 1 nm and less than or equal to 10 nm, or greater than or equalto 1 nm and less than or equal to 5 am. The separation layer contains asingle material (preferably, a bipolar substance) or a plurality ofmaterials (preferably, a hole-transport material and anelectron-transport material).

The separation layer may be formed using a material contained in thelight-emitting layer in contact with the separation layer. Thisfacilitates the manufacture of the light-emitting element and reducesthe drive voltage. For example, in the case where the phosphorescentlayer contains a host material, an assist material, and thephosphorescent material (a guest material), the separation layer maycontain the host material and the assist material. In other words, theseparation layer includes a region not containing the phosphorescentmaterial and the phosphorescent layer includes a region containing thephosphorescent material in the above structure. Thus, the separationlayer and the phosphorescent layer can be separately deposited dependingon the presence of the phosphorescent material. With such a structure,the separation layer and the phosphorescent layer can be formed in thesame chamber. Thus, the manufacturing cost can be reduced.

Moreover, the light-emitting element 830 may be a single elementincluding one EL layer or a tandem element in which EL layers arestacked with a charge generation layer provided therebetween.

The light-emitting element is preferably provided between a pair ofinsulating films that are highly resistant to moisture, in which caseimpurities such as water can be prevented from entering thelight-emitting element, thereby preventing a decrease in the reliabilityof the light-emitting device. Specifically, the use of an insulatingfilm highly resistant to moisture for the insulating layer 705 and theinsulating layer 715 allows the light-emitting element to be locatedbetween a pair of insulating films highly resistant to moisture, bywhich a decrease in the reliability of the light-emitting device can beprevented.

As the insulating layer 815, an inorganic insulating film such as asilicon oxide film, a silicon oxynitride film, or an aluminum oxide filmcan be used, for example. For the insulating layers 817, 817 a, and 817b, an organic material such as polyimide, acrylic, polyamide, polyimideamide, or a benzocyclobutene-based resin can be used, for example.Alternatively, a low dielectric constant material (low-k material) orthe like can be used. Furthermore, each of the insulating layers may beformed by stacking a plurality of insulating films.

The insulating layer 821 is formed using an organic insulating materialor an inorganic insulating material. As a resin, a polyimide resin, apolyamide resin, an acrylic resin, a siloxane resin, an epoxy resin, ora phenol resin can be used, for example. It is particularly preferablethat the insulating layer 821 be formed using a photosensitive resinmaterial to have an opening portion over the lower electrode 831 so thata sidewall of the opening portion is formed as an inclined surface withcurvature.

There is no particular limitation on the method for forming theinsulating layer 821. For example, a photolithography method, asputtering method, an evaporation method, a droplet discharging method(e.g., an ink-jet method), or a printing method (e.g., screen printingor off-set printing) may be used.

The spacer 823 can be formed using an inorganic insulating material, anorganic insulating material, a metal material, or the like. As theinorganic insulating material and the organic insulating material, avariety of materials that can be used for the aforementioned insulatinglayers can be used, for example. As the metal material, titanium,aluminum, or the like can be used. When the spacer 823 containing aconductive material and the upper electrode 835 are electricallyconnected to each other, a potential drop due to the resistance of theupper electrode 835 can be suppressed. The spacer 823 may have a taperedshape or an inverse tapered shape.

A conductive layer functioning as an electrode of the transistor, awiring, an auxiliary wiring of the light-emitting element, or the likein the light-emitting device can be formed with a single-layer structureor a stacked-layer structure using any of metal materials such asmolybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper,neodymium, and scandium and an alloy material containing any of theseelements, for example. The conductive layer may be formed using aconductive metal oxide such as indium oxide (e.g., In₂O₃), tin oxide(e.g., SnO₂), ZnO, ITO, indium zinc oxide (e.g., In₂O₃—ZnO), or any ofthese metal oxide materials containing silicon oxide.

The coloring layer is a colored layer that transmits light in a specificwavelength range. For example, a color filter for transmitting light ina red, green, blue, or yellow wavelength range can be used. Eachcoloring layer is formed in a desired position with any of variousmaterials by a printing method, an ink-jet method, an etching methodusing a photolithography method, or the like. In a white subpixel, aresin such as a transparent resin or a white resin may be provided so asto overlap with the light-emitting element.

The light-blocking layer is provided between adjacent coloring layers.The light-blocking layer blocks light emitted from an adjacentlight-emitting element to prevent color mixture between adjacentlight-emitting elements. Here, the coloring layer is provided such thatits end portion overlaps with the light-blocking layer, whereby lightleakage can be reduced. For the light-blocking layer, a material thatblocks light from the light-emitting element can be used; for example, ablack matrix can be formed using a metal material or a resin materialcontaining pigment or dye. Note that it is preferable to provide thelight-blocking layer in a region other than the light-emitting portion,such as a driver circuit portion, in which case undesired leakage ofguided light or the like can be suppressed.

An overcoat covering the coloring layer and the light-blocking layer maybe provided. The overcoat can prevent impurities and the like containedin the coloring layer from being diffused into the light-emittingelement. The overcoat is formed with a material that transmits lightemitted from the light-emitting element; for example, it is possible touse an inorganic insulating film such as a silicon nitride film or asilicon oxide film, an organic insulating film such as an acrylic filmor a polyimide film, or a stacked layer of an organic insulating filmand an inorganic insulating film.

In the case where upper surfaces of the coloring layer and thelight-blocking layer are coated with a material of the bonding layer, amaterial that has high wettability with respect to the material of thebonding layer is preferably used as the material of the overcoat. Forexample, the overcoat is preferably an oxide conductive film such as anITO film or a metal film such as an Ag film that is thin enough totransmit light.

When the overcoat is formed using a material that has high wettabilitywith respect to the material for the bonding layer, the material for thebonding layer can be uniformly applied. Thus, entry of bubbles in thestep of attaching the pair of substrates to each other can be prevented,and thus a display defect can be prevented.

For the connector, any of a variety of anisotropic conductive films(ACF), anisotropic conductive pastes (ACP), and the like can be used.

As described above, one embodiment of the present invention can be usedin a light-emitting device, a display device, an input/output device, orthe like. Examples of the display element include an EL element (an ELelement containing organic and inorganic materials, an organic ELelement, or an inorganic EL element), an LED (a white LED, a red LED, agreen LED, a blue LED, or the like), a liquid crystal element, anelectrophoretic element, and a display element using a micro electromechanical systems (MEMS).

Note that the light-emitting device of one embodiment of the presentinvention may be used as a display device or as a lighting device. Forexample, it may be used as a light source such as a backlight or a frontlight, that is, a lighting device for a display device.

This embodiment can be combined with any other embodiment asappropriate.

Embodiment 4

In this embodiment, an input/output device that can be used in theelectronic device of one embodiment of the present invention isdescribed with reference to drawings. Note that the above descriptioncan be referred to for the components of an input/output device whichare similar to those of the light-emitting device described inEmbodiment 3. Although a touch panel including a light-emitting elementis described in this embodiment as an example, one embodiment of thepresent invention is not limited to this example.

Structure Example 1

FIG. 28A is a top view of the input/output device. FIG. 28B is across-sectional view taken along dashed-dotted line A-B anddashed-dotted line C-D in FIG. 28A. FIG. 28C is a cross-sectional viewtaken along dashed-dotted line E-F in FIG. 28A.

A touch panel 390 illustrated in FIG. 28A includes a display portion 301(serving also as an input portion), a scan line driver circuit 303 g(1),an imaging pixel driver circuit 303 g(2), an image signal line drivercircuit 303 s(1), and an imaging signal line driver circuit 303 s(2).

The display portion 301 includes a plurality of pixels 302 and aplurality of imaging pixels 308.

The pixel 302 includes a plurality of subpixels. Each subpixel includesa light-emitting element and a pixel circuit.

The pixel circuits can supply electric power for driving thelight-emitting element. The pixel circuits are electrically connected towirings through which selection signals are supplied. The pixel circuitsare also electrically connected to wirings through which image signalsare supplied.

The scan line driver circuit 303 g(1) can supply selection signals tothe pixels 302.

The image signal line driver circuit 303 s(1) can supply image signalsto the pixels 302.

A touch sensor can be formed using the imaging pixels 308. Specifically,the imaging pixels 308 can sense a touch of a finger or the like on thedisplay portion 301.

The imaging pixels 308 include photoelectric conversion elements andimaging pixel circuits.

The imaging pixel circuits can drive photoelectric conversion elements.The imaging pixel circuits are electrically connected to wirings throughwhich control signals are supplied. The imaging pixel circuits are alsoelectrically connected to wirings through which power supply potentialsare supplied.

Examples of the control signal include a signal for selecting an imagingpixel circuit from which a recorded imaging signal is read, a signal forinitializing an imaging pixel circuit, and a signal for determining thetime it takes for an imaging pixel circuit to sense light.

The imaging pixel driver circuit 303 g(2) can supply control signals tothe imaging pixels 308.

The imaging signal line driver circuit 303 s(2) can read out imagingsignals.

As illustrated in FIGS. 28B and 28C, the touch panel 390 includes theflexible substrate 701, the bonding layer 703, the insulating layer 705,the flexible substrate 711, the bonding layer 713, and the insulatinglayer 715. The flexible substrate 701 and the flexible substrate 711 arebonded to each other with a bonding layer 360.

The flexible substrate 701 and the insulating layer 705 are attached toeach other with the bonding layer 703. The flexible substrate 711 andthe insulating layer 715 are attached to each other with the bondinglayer 713. Embodiment 3 can be referred to for materials used for thesubstrates, the bonding layers, and the insulating layers.

Each of the pixels 302 includes a subpixel 302R, a subpixel 302G, and asubpixel 302B (see FIG. 28C). The sub-pixel 302R includes alight-emitting module 380R, the sub-pixel 302G includes a light-emittingmodule 380G, and the sub-pixel 302B includes a light-emitting module380B.

For example, the subpixel 302R includes a light-emitting element 350Rand the pixel circuit. The pixel circuit includes a transistor 302 tthat can supply electric power to the light-emitting element 350R.Furthermore, the light-emitting module 380R includes the light-emittingelement 350R and an optical element (e.g., a coloring layer 367R thattransmits red light).

The light-emitting element 350R includes a lower electrode 351R, an ELlayer 353, and an upper electrode 352, which are stacked in this order(see FIG. 28C).

The EL layer 353 includes a first EL layer 353 a, an intermediate layer354, and a second EL layer 353 b, which are stacked in this order.

Note that a microcavity structure can be provided for the light-emittingmodule 380R so that light with a specific wavelength can be efficientlyextracted. Specifically, an EL layer may be provided between a film thatreflects visible light and a film that partly reflects and partlytransmits visible light, which are provided so that light with aspecific wavelength can be efficiently extracted.

For example, the light-emitting module 380R includes the bonding layer360 that is in contact with the light-emitting element 350R and thecoloring layer 367R. The coloring layer 367R is positioned in a regionoverlapping with the light-emitting element 350R. Accordingly, part oflight emitted from the light-emitting element 350R passes through thebonding layer 360 and through the coloring layer 367R and is emitted tothe outside of the light-emitting module 380R as denoted by arrows inFIGS. 28B and 28C.

The touch panel 390 includes a light-blocking layer 367BM. Thelight-blocking layer 367BM is provided so as to surround the coloringlayer (e.g., the coloring layer 367R).

The touch panel 390 includes an anti-reflective layer 367 p positionedin a region overlapping with the display portion 301. As theanti-reflective layer 367 p, a circular polarizing plate can be used,for example.

The touch panel 390 includes an insulating layer 321. The insulatinglayer 321 covers the transistor 302 t and the like. Note that theinsulating layer 321 can be used as a layer for planarizing unevennesscaused by the pixel circuits and the imaging pixel circuits. Thetransistor 302 t is preferably covered with an insulating layer that caninhibit diffusion of impurities to the transistor 302 t and the like.

The touch panel 390 includes a partition 328 that overlaps with an endportion of the lower electrode 351R. A spacer 329 that controls thedistance between the flexible substrate 701 and the flexible substrate711 is provided on the partition 328.

The image signal line driver circuit 303 s(1) includes a transistor 303t and a capacitor 303 c. Note that the driver circuit can be formed inthe same process and over the same substrate as the pixel circuits. Asillustrated in FIG. 28B, the transistor 303 t may include a second gate304 over the insulating layer 321. The second gate 304 may beelectrically connected to a gate of the transistor 3031, or differentpotentials may be supplied to these gates. Alternatively, if necessary,the second gate 304 may be provided for the transistor 308 t, thetransistor 302 t, or the like.

The imaging pixels 308 each include a photoelectric conversion element308 p and an imaging pixel circuit. The imaging pixel circuit can senselight received by the photoelectric conversion element 308 p. Theimaging pixel circuit includes the transistor 308 t. For example, a PINphotodiode can be used as the photoelectric conversion element 308 p.

The touch panel 390 includes a wiring 311 through which a signal issupplied. The wiring 311 is provided with a terminal 319. Note that anFPC 309 through which a signal such as an image signal or asynchronization signal is supplied is electrically connected to theterminal 319. Note that a printed wiring board (PWB) may be attached tothe FPC 309.

Note that transistors such as the transistors 302 t, 3031, and 308 t canbe formed in the same process. Alternatively, the transistors may beformed in different processes.

Structure Example 2

FIGS. 29A and 29B are perspective views of a touch panel 525. Note thatFIGS. 29A and 29B illustrate only main components for simplicity. FIGS.30A and 30B are each a cross-sectional view taken along dashed-dottedline X1-X2 in FIG. 29A.

As illustrated in FIGS. 29A and 29B, the touch panel 525 includes adisplay portion 521, the scan line driver circuit 303 g(1), a touchsensor 595, and the like. Furthermore, the touch panel 525 includes theflexible substrate 701, the flexible substrate 711, and a flexiblesubstrate 590.

The touch panel 525 includes a plurality of pixels and a plurality ofwirings 311. The plurality of wirings 311 can supply signals to thepixels. The plurality of wirings 311 are arranged to a peripheralportion of the flexible substrate 701, and part of the plurality ofwirings 311 form the terminal 319. The terminal 319 is electricallyconnected to an FPC 529(1).

The touch panel 525 includes the touch sensor 595 and a plurality ofwirings 598. The plurality of wirings 598 are electrically connected tothe touch sensor 595. The plurality of wirings 598 are arranged to aperipheral portion of the flexible substrate 590, and part of theplurality of wirings 598 form a terminal. The terminal is electricallyconnected to an FPC 529(2). Note that in FIG. 29B, electrodes, wirings,and the like of the touch sensor 595 provided on the back side of theflexible substrate 590 (the side facing the flexible substrate 701) aredenoted by solid lines for clarity.

As the touch sensor 595, for example, a capacitive touch sensor can beused. Examples of the capacitive touch sensor are a surface capacitivetouch sensor and a projected capacitive touch sensor. An example ofusing a projected capacitive touch sensor is described here.

Examples of a projected capacitive touch sensor are a self-capacitivetouch sensor and a mutual capacitive touch sensor. The use of a mutualcapacitive type is preferable because multiple points can be sensedsimultaneously.

Note that a variety of sensors that can sense the closeness or thecontact of a sensing target such as a finger can be used as the touchsensor 595.

The projected capacitive touch sensor 595 includes electrodes 591 andelectrodes 592. The electrodes 591 are electrically connected to any ofthe plurality of wirings 598, and the electrodes 592 are electricallyconnected to any of the other wirings 598.

The electrodes 592 each have a shape of a plurality of quadranglesarranged in one direction with one corner of a quadrangle connected toone corner of another quadrangle as illustrated in FIGS. 29A and 29B.

The electrodes 591 each have a quadrangular shape and are arranged in adirection intersecting with the direction in which the electrodes 592extend. Note that the plurality of electrodes 591 are not necessarilyarranged in the direction orthogonal to one electrode 592 and may bearranged to intersect with one electrode 592 at an angle of less than 90degrees.

The wiring 594 intersects with the electrode 592. The wiring 594electrically connects two electrodes 591 between which one of theelectrodes 592 is positioned. The intersecting area of the electrode 592and the wiring 594 is preferably as small as possible. Such a structureallows a reduction in the area of a region where the electrodes are notprovided, reducing unevenness in transmittance. As a result, unevennessin luminance of light from the touch sensor 595 can be reduced.

Note that the shapes of the electrodes 591 and the electrodes 592 arenot limited to the above-mentioned shapes and can be any of a variety ofshapes.

As illustrated in FIG. 30A, the touch panel 525 includes the flexiblesubstrate 701, the bonding layer 703, the insulating layer 705, theflexible substrate 711, the bonding layer 713, and the insulating layer715. The flexible substrate 701 and the flexible substrate 711 areattached to each other with the bonding layer 360.

A bonding layer 597 attaches the flexible substrate 590 to the flexiblesubstrate 711 so that the touch sensor 595 overlaps with the displayportion 521. The bonding layer 597 has a light-transmitting property.

The electrodes 591 and the electrodes 592 are formed using alight-transmitting conductive material. As a light-transmittingconductive material, a conductive oxide such as indium oxide, indium tinoxide, indium zinc oxide, zinc oxide, or zinc oxide to which gallium isadded can be used. Note that a film including graphene may be used aswell. The film including graphene can be formed, for example, byreducing a film including graphene oxide. As a reducing method, a methodwith application of heat or the like can be employed.

Note that as a material of the conductive films such as the electrodes591, the electrodes 592, and the wiring 594, that is, wirings andelectrodes forming the touch panel, a transparent conductive filmincluding indium oxide, tin oxide, zinc oxide, or the like (e.g., ITO)can be given. A low-resistance material is preferably used as a materialthat can be used as the wirings and electrodes forming the touch panel.For example, silver, copper, aluminum, a carbon nanotube, graphene, or ametal halide (such as a silver halide) may be used. Alternatively, ametal nanowire including a number of conductors with an extremely smallwidth (for example, a diameter of several nanometers) may be used.Further alternatively, a net-like metal mesh with a conductor may beused. For example, an Ag nanowire, a Cu nanowire, an Al nanowire, an Agmesh, a Cu mesh, or an Al mesh may be used. For example, in the case ofusing an Ag nanowire as the wirings and electrodes forming the touchpanel, a visible light transmittance of 89% or more and a sheetresistance value of 40 ohm/square or more and 100 ohm/square or less canbe achieved. Since the above-described metal nanowire, metal mesh,carbon nanotube, graphene, and the like, which are examples of thematerial that can be used as the wirings and electrodes forming thetouch panel, have high visible light transmittances, they may be used aselectrodes of display elements (e.g., a pixel electrode or a commonelectrode).

The electrodes 591 and the electrodes 592 may be formed by depositing alight-transmitting conductive material on the flexible substrate 590 bya sputtering method and then removing an unnecessary portion by any ofvarious patterning techniques such as photolithography.

The electrodes 591 and the electrodes 592 are covered with an insulatinglayer 593. Furthermore, openings reaching the electrodes 591 are formedin the insulating layer 593, and the wiring 594 electrically connectsthe adjacent electrodes 591. A light-transmitting conductive materialcan be favorably used for the wiring 594 because the aperture ratio ofthe touch panel can be increased. Moreover, a material with higherconductivity than the conductivities of the electrodes 591 and theelectrodes 592 can be favorably used for the wiring 594 because electricresistance can be reduced.

Note that an insulating layer covering the insulating layer 593 and thewiring 594 may be provided to protect the touch sensor 595.

Furthermore, a connection layer 599 electrically connects the wirings598 to the FPC 529(2).

The display portion 521 includes a plurality of pixels arranged in amatrix. Each pixel has the same structure as Structure Example 1; thus,description is omitted.

As illustrated in FIG. 30B, the touch panel may include two substratesof the flexible substrate 701 and the flexible substrate 711 withoutincluding the flexible substrate 590. The flexible substrate 711 and theinsulating layer 715 are attached to each other with the bonding layer713, and the touch sensor 595 is provided in contact with the insulatinglayer 715. The coloring layer 367R and the light-blocking layer 367BMare provided in contact with the insulating layer 589 that covers thetouch sensor 595. The insulating layer 589 is not necessarily provided,in which case the coloring layer 367R or the light-blocking layer 367BMis provided in contact with the wiring 594.

Structure Example 3

FIGS. 31A to 31C are cross-sectional views of a touch panel 525B. Thetouch panel 525B described in this embodiment is different from thetouch panel 525 in Structure example 2 in that received image data isdisplayed on the side where the transistors are provided and that thetouch sensor is provided on the flexible substrate 701 side of thedisplay portion. Different structures will be described in detail below,and the above description is referred to for the other similarstructures.

The coloring layer 367R is positioned in a region overlapping with thelight-emitting element 350R. The light-emitting element 350R illustratedin FIG. 31A emits light to the side where the transistor 3021 isprovided. Accordingly, part of light emitted from the light-emittingelement 350R passes through the coloring layer 367R and is emitted tothe outside of the light-emitting module 380R as denoted by an arrow inFIG. 31A.

The touch panel 525B includes the light-blocking layer 367BM on thelight extraction side. The light-blocking layer 367BM is provided so asto surround the coloring layer (e.g., the coloring layer 367R).

The touch sensor 595 is provided not on the flexible substrate 711 sidebut on the flexible substrate 701 side (see FIG. 31A).

The bonding layer 597 attaches the flexible substrate 590 to theflexible substrate 701 so that the touch sensor 595 overlaps with thedisplay portion. The bonding layer 597 has a light-transmittingproperty.

Note that a structure in the case of using bottom-gate transistors inthe display portion 521 is illustrated in FIGS. 31A and 31B.

For example, a semiconductor layer containing an oxide semiconductor,amorphous silicon, or the like can be used in the transistor 302 t andthe transistor 303 t illustrated in FIG. 31A.

For example, a semiconductor layer containing polycrystalline silicon orthe like can be used in the transistor 302 t and the transistor 303 tillustrated in FIG. 31B.

A structure in the case of using top-gate transistors is illustrated inFIG. 31C.

For example, a semiconductor layer containing polycrystalline silicon, asingle crystal silicon film that is transferred from a single crystalsilicon substrate, or the like can be used in the transistor 302 t andthe transistor 303 t illustrated in FIG. 31C.

As described in Embodiment 1 and the like, in the electronic device ofone embodiment of the present invention, the display panel and the powerstorage device overlap with each other. FIGS. 32A and 32B eachillustrate an example of a cross-sectional view in the case where atouch panel and a thin secondary battery overlap with each other. Thetouch panel in FIG. 32A has a structure similar to that of the touchpanel 525 in FIG. 30A and the thin secondary battery in FIG. 32A has astructure similar to that of the battery unit 500 in FIG. 14A. The touchpanel in FIG. 32B has a structure similar to that of the touch panel 525in FIG. 30B and the thin secondary battery in FIG. 32B has a structuresimilar to that of the battery unit 500 in FIG. 14B.

In FIGS. 32A and 32B, the flexible substrate 701 included in the touchpanel and the exterior body 509 included in the battery unit are incontact with each other; however, one embodiment of the presentinvention is not limited thereto. The touch panel and the battery unitmay be fixed to each other with an adhesive or the like. Alternatively,a circuit board or the like may be provided between the touch panel andthe battery unit.

FIGS. 33A and 33B each illustrate a modification example of astacked-layer structure of the touch panel including the subpixel 302Rand the scan line driver circuit 303 g(1) and the thin secondary batteryin FIG. 32A.

FIG. 33A illustrates an example where the insulating layer 705 and theexterior body 509 are bonded to each other with the bonding layer 703.In this manner, in one embodiment of the present invention, thetransistor, the light-emitting element, and the like formed over aformation substrate may be transferred onto the secondary battery.

FIG. 33B illustrates an example where the flexible substrate 701 and theinsulating layer 705 are bonded to each other with the bonding layer 703a, and the flexible substrate 701 and the exterior body 509 are bondedto each other with the bonding layer 703 b.

A transistor 848 illustrated in FIGS. 34A to 34C is a type of top-gatetransistor including a back gate electrode. FIG. 34A is a top view ofthe transistor 848. FIG. 34B is a cross-sectional view taken alongdashed-dotted line X1-X2 in FIG. 34A. FIG. 34C is a cross-sectional viewtaken along dashed-dotted line Y1-Y2 in FIG. 34A.

In the transistor 848, a semiconductor layer 742 is formed over aprojection of an insulating layer 772. When the semiconductor layer 742is provided over the projection of the insulating layer 772, the sidesurface of the semiconductor layer 742 can also be covered with anelectrode 743. Thus, the transistor 848 has a structure in which thesemiconductor layer 742 can be electrically surrounded by an electricfield of the electrode 743. Such a structure of a transistor in which asemiconductor layer in which a channel is formed is electricallysurrounded by an electric field of a conductive film is called asurrounded channel (s-channel) structure. A transistor with an s-channelstructure is referred to as an s-channel transistor.

In an s-channel structure, a channel can be formed in the whole (bulk)of the semiconductor layer 742. In an s-channel structure, the draincurrent of the transistor can be increased, so that a larger amount ofon-state current can be obtained. Furthermore, the entire channelformation region of the semiconductor layer 742 can be depleted by anelectric field of the electrode 743. Accordingly, the off-state currentof the transistor with an s-channel structure can further be reduced.

An electrode 723 is provided over a substrate 771 having an insulatingsurface. The electrode 723 can function as a back gate electrode.

An electrode 744 a provided over an insulating layer 729 is electricallyconnected to the semiconductor layer 742 through an opening 747 c formedin insulating layers 726, 728, and 729. An electrode 744 b provided overthe insulating layer 729 is electrically connected to the semiconductorlayer 742 through an opening 747 d formed in the insulating layers 726,728, and 729.

The electrode 743 provided over the insulating layer 726 is electricallyconnected to the electrode 723 through an opening 747 a and an opening747 b formed in the insulating layers 726 and 772. Accordingly, the samepotential is supplied to an electrode 746 and the electrode 723.Furthermore, either or both of the openings 747 a and 747 b may beomitted. In the case where both the openings 747 a and 747 b areomitted, different potentials can be supplied to the electrodes 723 and746.

As a semiconductor in a transistor having an s-channel structure, anoxide semiconductor, silicon such as polycrystalline silicon or singlecrystal silicon that is transferred from a single crystal siliconsubstrate, or the like is used.

This embodiment can be combined with any other embodiment asappropriate.

Embodiment 5

In this embodiment, electronic devices of embodiments of the presentinvention will be described with reference to FIGS. 35A to 35G, FIGS.36A and 36B, FIGS. 37A to 37F, FIGS. 38A to 38C, FIGS. 39A to 39D, andFIGS. 40A to 40D.

One embodiment of the present invention is an electronic deviceincluding a display panel, a power storage device, a circuit, and asealing structure. The display panel has a function of displaying animage with power supplied from the power storage device. The circuitincludes an antenna and has a function of charging the power storagedevice wirelessly. Inside the sealing structure, the display panel, thepower storage device, and the circuit are provided. At least part of thesealing structure has a function of transmitting visible light. As forthe electronic device of one embodiment of the present invention, thesealing structure may be worn on an arm or a structure body connected tothe sealing structure may be worn on an arm.

With the use of the sealing structure, the display panel, the powerstorage device, the circuit, and the like, which are sealed objects, canbe protected, so that a sturdy electronic device can be fabricated.Moreover, with the use of a sealing structure having high waterresistance, an electronic device which has high water resistance and canbe used in water can be fabricated.

In the fabrication of the electronic device of one embodiment of thepresent invention, the display panel and the power storage device can becollectively covered with and sealed by the sealing structure. Thus, ahighly reliable electronic device can be simply fabricated. In addition,the sealing structure has a shape which can be worn on a human bodysnugly, such as a belt shape, whereby the sealing structure itself canbe worn on a human body and the electronic device can be used as awearable device.

In the electronic device of one embodiment of the present invention, thepower storage device can be charged by contactless power transmission.Therefore, the power storage device does not need to be taken out fromthe sealing structure in charging. Accordingly, the whole of the sealedobject can be completely sealed by the sealing structure, so that waterresistance of the electronic device can be further improved.

Note that in one embodiment of the present invention, one or morecomponents of the sealed object may be flexible. For example, thedisplay panel or the power storage device may be flexible or both thedisplay panel and the power storage device may be flexible.

In the case where at least one of the display panel and the powerstorage device is flexible, the sealing structure, which is flexible,can protect the display panel and/or the power storage device withoutreducing the flexibility. Using one embodiment of the present inventionin such a manner enables fabrication of a flexible electronic devicethat is highly reliable and highly safe. The flexible electronic deviceis preferable because effects of putting on and taking off theelectronic device easily, wearing comfortably, and the like can beobtained.

In the electronic device in this embodiment, the whole of the sealedobject is covered with the flexible sealing structure. When the sealedobject is covered with the flexible sealing structure, an electronicdevice that is not easily broken even after being repeatedly bent andstretched can be fabricated.

In addition, with a sealing structure having high heat resistance, thedisplay panel can be driven even at high temperatures. Furthermore, theelectronic device can be reversibly bent even at high temperatures. Inthat case, the display panel and the power storage device preferablyhave high heat resistance.

In this embodiment, an example where a display device detailed inEmbodiment 6 is used in a display panel is described. Note that, for theelectronic device in this embodiment, the structure described inEmbodiment 1 can be used as appropriate.

A user can view display of the display device of one embodiment of thepresent invention well irrespective of surrounding brightness, byswitching elements used for display (selecting which display element touse for displaying) in accordance with the surrounding brightness or theamount of external light entering the display device. For example, in abright place, external light and a reflective liquid crystal element arepreferably utilized to perform display. In a dim place, a light-emittingelement such as an organic EL element is preferably utilized to performdisplay. The display device may perform display by utilizing pluralkinds of display elements at a time.

The electronic device of one embodiment of the present inventionpreferably includes a sensor that senses the brightness of anenvironment in which the electronic device is used. For example, aphotodiode or an image sensor is preferably included. In the electronicdevice, the elements to be used for display are preferably switchedautomatically in accordance with the brightness sensed by the sensor.When the display state of the display device can be changedautomatically in accordance with the brightness of a usage environment,convenience of the electronic device for the user can be improved.

Alternatively, in the electronic device of one embodiment of the presentinvention, it is preferable that the user of the electronic devicemanually switch the elements to be used for display.

Next, the electronic device of this embodiment is specificallydescribed.

FIG. 35A is a perspective view of an electronic device 101. FIG. 35B isa top view of the electronic device 101. FIG. 35C is a cross-sectionalview taken along dashed-dotted line A-B in FIG. 35B, and FIG. 35F is across-sectional view taken along dashed-dotted line C-D in FIG. 35B.

The electronic device 101 includes the display panel 10, the powerstorage device 20, the circuit 30, and the sealing structure 40. In FIG.35A and the like, a portion of the display panel 10 whose display can beviewed by users is referred to as the display portion 15 of theelectronic device 101.

<Display Portion 15>

The electronic device 101 includes the display portion 15. In FIGS. 35A,35C, 35F, and the like, the display portion 15 has a flat surface. InFIG. 35C and the like, a display surface of the electronic device 101 isdenoted by arrows.

The display portion 15 may be flexible. In other words, the displayportion 15 may be changed in shape so that the curvature of the displayportion 15 can be changed from the curvature of the shape in FIG. 35A.Note that the shape of the display portion may be fixed to a flat shapeor a shape including a curved surface.

In the case where the flexibility of the display panel is lower thanthat of the sealing structure, when the electronic device of oneembodiment of the present invention is worn on an arm or the like, it ispreferable that a radius of curvature of the display portion 15 hardlychange and end portions of the electronic device be bent.

<Sealing Structure 40>

The electronic device 101 includes the sealing structure 40. In FIG.35A, the sealing structure 40 has a curved surface. The sealingstructure 40 can be changed in shape from the shape including the curvedsurface as shown in FIG. 35A to a flat shape as shown in FIG. 35B. Thesealing structure 40 that can be used in the electronic device 101 issimilar to that in Embodiment 1; thus, detailed description thereof isomitted.

In the electronic device 101, the display panel 10, the power storagedevice 20, and the circuit 30 are stacked. This stacking order is notparticularly limited as long as the display in the display panel 10 canbe viewed by the users. Alternatively, these layers are not necessarilystacked, and any two or more of the display panel 10, the power storagedevice 20, and the circuit 30 may be provided on the same plane.

For example, as illustrated in FIG. 35F and the like, in the electronicdevice 101, the circuit 30 may be provided over the power storage device20, and the display panel 10 may be provided over the circuit 30. Whenthe sealing structure 40 is worn on an arm and the power storage device20, the circuit 30, and the display panel 10 are stacked in this orderfrom the arm side, the users can view the display in the display panel10. Alternatively, the circuit 30, the power storage device 20, and thedisplay panel 10 may be stacked in this order from the arm side.

A space sealed by the sealing structure 40 is preferably in areduced-pressure atmosphere or an inert atmosphere. By such anatmosphere, the reliability of the display panel 10 or the like can beincreased compared with an air atmosphere.

FIGS. 35D and 35E are each a cross-sectional view taken alongdashed-dotted line A-B in FIG. 35B, which is different from thecross-sectional view in FIG. 35C. FIG. 35G is a cross-sectional viewtaken along dashed-dotted line C-D in FIG. 35B, which is different fromthe cross-sectional view in FIG. 35F.

In FIGS. 35C and 35F, the sealing structure 40 on the front (displaysurface) side of the electronic device 101 covers side surfaces of thesealed object, and a surface on the rear side of the electronic device101 is flat; however, the present invention is not limited thereto. Asillustrated in FIGS. 35D and 35G, the sealing structure 40 on both thefront (display surface) side and the rear side of the electronic device101 may cover side surfaces of the sealed object, and the electronicdevice 101 may include portions that project as compared with the otherportions (e.g., a band portion) on both the front side and the rearside. Alternatively, as illustrated in FIG. 35E, the sealing structure40 on the rear side of the electronic device 101 may cover side surfacesof the sealed object and a surface on the front side (display surface)of the electronic device 101 may be flat. Moreover, as illustrated inFIG. 35C, a portion including the display portion 15 of the electronicdevice 101 may project as compared with the other portions (e.g., a bandportion). Alternatively, as illustrated in FIG. 35E, a portion thatprojects as compared with the other portions (e.g., a band portion) maybe provided on the rear side of the electronic device 101.

FIGS. 36A and 36B, FIGS. 37A to 37F, FIGS. 38A to 38C, and FIGS. 39A to39D illustrate electronic devices which are different from theelectronic device 101.

FIG. 36A is a perspective view of an electronic device 101 a. FIG. 37Ais a top view of the electronic device 101 a, FIG. 37B is across-sectional view taken along dashed-dotted line E-F in FIG. 37A, andFIG. 37F is a cross-sectional view taken along dashed-dotted line G-H inFIG. 37A. In addition, FIG. 36B is a perspective view of an electronicdevice 101 b.

FIGS. 36A and 36B each show an example where the display portion 15 hasa flat surface. FIG. 36A shows an example where the power storage device20 and the circuit 30 are each flexible and have a curved surface. FIG.36B shows an example where the power storage device 20 is flexible andhas a curved surface. In FIGS. 36A and 36B, the display panel 10 is oris not necessarily flexible. In FIG. 36B, the circuit 30 is or is notnecessarily flexible.

The electronic device 101 a includes the display portion 15. Inaddition, the electronic device 101 a includes the sealing structure 40.In the electronic device 101 a, the display panel 10, the power storagedevice 20, and the circuit 30 are provided inside the sealing structure40.

In the electronic device 101 a, the display panel 10 and the powerstorage device 20 overlap, the circuit 30 and the power storage device20 overlap, and the display panel 10 and the circuit 30 do not overlap.In this manner, the sealed object may be positioned in a portionfunctioning as a band in the sealing structure 40. For example, in thecase where the flexible power storage device 20 is used, the powerstorage device 20 can be positioned in a wide region inside the sealingstructure 40, and an electronic device that can be used for a long timeper charge can be fabricated.

Inside the sealing structure 40, at least one of a buoyancy material anda member with rubber elasticity may be provided as described in detailin Embodiment 1.

FIGS. 37C to 37E are each a cross-sectional view taken alongdashed-dotted line E-F in FIG. 37A, which is different from thecross-sectional view in FIG. 37B.

The buoyancy material or the member with rubber elasticity is preferablyprovided in the space 42 shown in FIGS. 37B, 37C, 37D, and 37F, forexample.

As illustrated in FIG. 37B, the display panel 10 and the power storagedevice 20, and the circuit 30 and the power storage device 20 may be incontact with each other. Alternatively, as illustrated in FIG. 37C, thedisplay panel 10 and the power storage device 20 are not necessarily incontact with each other. Similarly, the circuit 30 and the power storagedevice 20 are not necessarily in contact with each other. In addition,the display panel 10, the power storage device 20, and the circuit 30may each be in contact with the sealing structure 40. FIGS. 37D and 37Ceach show an example where the power storage device 20 is in contactwith the sealing structure 40. FIG. 37C shows an example where thedisplay panel 10 is in contact with the sealing structure 40.Alternatively, as illustrated in FIG. 37D, the sealing structure 40 isnot necessarily contact with the sealed object Note that in the casewhere there is a portion where any two or more of the display panel 10,the power storage device 20, the circuit 30, and the sealing structure40 are in contact with each other, these may be fixed with an adhesiveor the like or may be in contact with each other so that they can bemoved relatively.

Alternatively, as illustrated in FIG. 37E, pressure inside the sealingstructure 40 may be sufficiently reduced. Thus, degradation of thedisplay panel 10, the power storage device 20, the circuit 30, and thelike due to impurities and the like can be suppressed. Moreover, anelectronic device can be thinner and more lightweight.

In FIGS. 37B and 37F, the sealing structure 40 on the front (displaysurface) side of the electronic device 101 a covers side surfaces of thesealed object, and a surface on the rear side of the electronic device101 a is flat; however, the present invention is not limited thereto. Asillustrated in FIG. 37D, the sealing structure 40 on both the front(display surface) side and the rear side of the electronic device 101 amay cover side surfaces of the sealed object, and the electronic device101 a may include portions that project as compared with the otherportions (e.g., a band portion) on both the front side and the rearside.

FIG. 38A is a perspective view of an electronic device 101 c. FIG. 39Ais a top view of the electronic device 101 c, and FIG. 39B is across-sectional view taken along dashed-dotted line J-K in FIG. 39A.

The electronic device 101 c includes the sealing structure 40 and theband 155. Inside the sealing structure 40, the display panel 10, thecircuit 30, the power storage device 20, and the like are provided. Thesealing structure 40 is connected to the band 155. The sealing structure40 and the band 155 are preferably connected to each other detachably.

Like an electronic device 101 d in FIG. 38B and an electronic device 101e in FIG. 38C, the band 155 may have a depression portion and thesealing structure 40 may be positioned in the depression portion. If thesealing structure 40 projects as compared with the band 155, when theelectronic device rubs or bumps against another object while being used,the display portion 15 might be damaged, and moreover, the electronicdevice might be broken. Thus, the band 155 is preferably connected tothe sealing structure 40 so that the surface of the band 155 and thesurface of the sealing structure 40 can be in substantially the sameplane. Note that the depth of the depression portion of the band 155 maybe greater than the thickness of the sealing structure 40.

The electronic device 101 d is an example where the display portion 15has a flat surface. The electronic device 101 e is an example where thedisplay portion 15 has a curved surface.

In FIG. 38A and FIG. 39A, an example where the width of the sealingstructure 40 is equal to the width of the band 155 is shown; however,one embodiment of the present invention is not limited thereto. Asillustrated in FIG. 39C, the width of the sealing structure 40 may benarrower than that of the band 155. Alternatively, as illustrated inFIG. 39D, the width of the sealing structure 40 may be broader than thatof the band 155.

Next, examples of components of the electronic device in one embodimentof the present invention are shown.

An element 151 in FIG. 40A includes the display panel 10, the powerstorage device 20, the circuit 30, and the sealing structure 40. Thedisplay panel 10, the power storage device 20, and the circuit 30 areprovided inside the sealing structure 40. Hereinafter, the display panel10, the power storage device 20, and the circuit 30 are collectivelyreferred to as a sealed object in some cases.

The element 151 can be used so that the sealing structure 40 isconnected to the band 155, like an element 151 a in FIG. 38A, an element151 b in FIG. 38B, and an element 151 c in FIG. 38C. Alternatively, asillustrated in FIGS. 37A to 37E, the sealing structure 40 is formed in abelt shape, whereby the sealing structure 40 itself may be worn on anarm.

FIG. 40B is a block diagram illustrating an example of the connectionrelation in the sealed object.

The display panel 10 includes a display element 13. The display panel 10has a function of displaying an image with power supplied from the powerstorage device 20.

Note that the display panel 10 may have a function of displaying animage with power supplied from a component other than the power storagedevice 20.

The power storage device 20 includes a portion overlapping with thedisplay panel 10.

Note that the power storage device 20 may have a function of supplyingpower to a component other than the display panel 10.

The circuit 30 includes the antenna 31. The antenna 31 includes aportion overlapping with the display panel 10. The circuit 30 can chargethe power storage device 20 wirelessly (without contact).

Providing the portion where the display panel 10 and the circuit 30overlap with each other or the portion where the display panel 10 andthe power storage device 20 overlap with each other enables a reductionin size of the element 151. In particular, it is preferred that aportion where the display panel 10, the power storage device 20, and thecircuit 30 overlap with one another be provided. A reduction in size ofthe element 151 is particularly effective in the case where the sealingstructure 40 and the band are separately provided. Note that in the casewhere a reduction in size of the element 151 is not needed, e.g., in thecase where the sealing structure 40 is used as the band of theelectronic device, the portion where the display panel 10 and thecircuit 30 overlap with each other or the portion where the displaypanel 10 and the power storage device 20 overlap with each other is notnecessarily provided.

It is preferred that the power storage device 20 include a portionoverlapping with the circuit 30. For example, at least part of theantenna 31 may overlap with the power storage device 20. The displaypanel 10, the power storage device 20, and the circuit 30 preferablyoverlap with one another such that the user of the electronic devicehardly perceives the antenna 31, e.g., the antenna 31 is providedbetween the display panel 10 and the power storage device 20, in whichcase the appearance of the electronic device can be maintained. Even ifthe display panel 10 is positioned between an external antenna and theantenna 31, radio waves can be transmitted and received. That is, aradio wave transmitted from the external antenna passes through thedisplay panel 10, and the antenna 31 receives the radio wave.

In the case where the usage environment of the electronic device isdetermined, a display panel capable of displaying an image in theenvironment and a power storage device capable of supplying power to thedisplay panel in the environment are used.

It is preferred that the electronic device of one embodiment of thepresent invention can be used at low temperatures and at hightemperatures. The electronic device of one embodiment of the presentinvention can be used in a wide temperature range (e.g., higher than orequal to 0° C. and lower than or equal to 100° C., preferably higherthan or equal to −25° C. and lower than or equal to 150° C., furtherpreferably higher than or equal to −50° C. and lower than or equal to200° C.). The electronic device of one embodiment of the presentinvention can be used either indoors or outdoors.

It is preferred that a display panel of the electronic device of oneembodiment of the present invention can display an image at bothtemperatures of 0° C. and 100° C. Furthermore, it is preferred that apower storage device of the electronic device of one embodiment of thepresent invention can supply power to the display panel at bothtemperatures of 0° C. and 100° C.

The electronic device may include a switch. In FIGS. 40C and 40D, thedisplay panel 10, the power storage device 20, the circuit 30, a circuit50, and a switch 51 are illustrated as a sealed object.

As illustrated in FIG. 40C, the circuit 30 can charge the power storagedevice wirelessly when the switch 51 is off.

As illustrated in FIG. 40D, the power storage device 20 can supply powerto the display panel 10 when the switch 51 is on.

Components of the electronic device of one embodiment of the presentinvention will be described in detail below.

<Display Panel 10>

The display panel 10 includes the display element 13. As a structureexample of the display panel 10, a display device will be detailed inEmbodiment 6. The display panel may include a sensing element such as atouch sensor.

In the display panel 10, an active matrix method or a passive matrixmethod can be used.

The display panel 10 may be flexible. For example, when a film is usedfor at least one of a supporting substrate and a sealing substrate ofthe display element 13, the flexibility of the display panel 10 can beincreased.

For example, the electronic device can be preferably used while thedisplay panel is bent with a radius of curvature from 1 m to 10 m,preferably from 1 m to 5 m. Note that in the case where the displaypanel is more flexible, the electronic device may be used while thedisplay panel is bent with a radius of curvature of 1 mm or more andless than 1 m.

It is preferred that the display panel 10 be capable of displaying animage at low temperatures and at high temperatures. The range of lowtemperatures is, for example, higher than or equal to −100° C. and lowerthan or equal to 0° C., preferably higher than or equal to −100° C. andlower than or equal to −25° C., more preferably higher than or equal to−100° C. and lower than or equal to −50° C. The range of hightemperatures is, for example, higher than or equal to 100° C. and lowerthan or equal to 300° C., preferably higher than or equal to 150° C. andlower than or equal to 300° C., more preferably higher than or equal to200° C. and lower than or equal to 300° C. Note that the display panel10 can display an image at higher than 0° C. and lower than 100° C., inaddition to at low temperatures and at high temperatures. For example,the display panel 10 can display an image at a room temperature (higherthan or equal to 20° C. and lower than or equal to 30° C.).

As the display element 13, a light-emitting element, a liquid crystalelement, an electrophoretic element, a display element using microelectro mechanical systems (MEMS), or the like can be used. As thelight-emitting element, a self-luminous element can be used, and anelement whose luminance is controlled by current or voltage is includedin the category of the light-emitting element. For example, alight-emitting diode (LED), an organic EL element, an inorganic ELelement, or the like can be used.

It is preferred that the heat resistance of the display element 13 be ashigh as possible. For example, in the case where an organic EL elementis used as the display element 13, the glass transition temperature ofeach of organic compounds contained in the organic EL element ispreferably higher than or equal to 100° C. and lower than or equal to300° C., more preferably higher than or equal to 150° C. and lower thanor equal to 300° C.

<Power Storage Device 20>

The details and the structure example of the power storage device 20 arenot described here because Embodiments I and 2 can be referred to.

In the electronic device, the display element 13 and the power storagedevice 20 may be provided to overlap with each other. As the area wherethe display element 13 and the power storage device 20 overlap with eachother is larger, the power storage device 20 can be made warm in a widerarea by utilizing heat of the display element 13. The reliability of theelectronic device can be increased even in the case where a powerstorage device which operates more hardly in a low-temperatureenvironment than in a high-temperature environment is used.

<Circuit 30>

The details of the circuit 30 are not described here because Embodiment1 can be referred to.

<Circuit 50>

The circuit 50 has a function of converting power supplied from thepower storage device 20 into power which makes the display element 13drive. For example, the circuit 50 may have a function of converting(stepping up or stepping down) output voltage of the power storagedevice 20 into voltage which makes the display element 13 drive.

<Switch 51>

The details of the switch 51 are not described here because Embodiment 1can be referred to.

An environment where the electronic device of one embodiment of thepresent invention can be used is not limited to an air atmosphere. Theelectronic device of one embodiment of the present invention can be usedin water at temperatures of higher than or equal to 0° C. and lower thanor equal to 100° C., for example. The electronic device of oneembodiment of the present invention can have high reliability even whenused in water since the display panel and the power storage device canbe used in a wide temperature range and are sealed by a sealingstructure, for example.

For the components of the electronic device in this embodiment, thecontent described with reference to FIGS. 8A to 8C can be used.

The electronic device of this embodiment and the components thereof canbe used in the arm-worn electronic devices illustrated in FIGS. 9A to 9Dand FIGS. 10A to 10D.

This embodiment can be combined with any other embodiment asappropriate.

Embodiment 6

In this embodiment, a display device that can be used for the electronicdevice of one embodiment of the present invention is described withreference to drawings. In this embodiment, a display device including aliquid crystal element and an organic EL element is mainly shown as anexample; however, one embodiment of the present invention is not limitedthereto. Note that the above description can be referred to for thecomponents of the display device, which are similar to those inEmbodiment 3.

The display device of one embodiment of the present invention includes afirst display element and a second display element. The first displayelement includes a reflective layer which has a function of reflectinglight. The first display element has a function of controlling lighttransmission. The reflective layer has an opening portion. The seconddisplay element includes a portion overlapping with the opening portion.The second display element has a function of emitting light toward theopening portion. The opening portion preferably has an area greater thanor equal to 5% and less than or equal to 20% of the area of thereflective layer.

For example, when a sufficient amount of external light enters thedisplay device (e.g., in a bright place), display can be performed byutilizing external light and the first display element. Thus, the powerconsumption of the display device can be reduced. Even when thesurroundings of the display device are dark and a small amount ofexternal light enters the display device, display can be performed byutilizing the second display element. Note that in a dim place, both thefirst display element and the second display element can be driven toperform display. Alternatively, in a dim place, only the second displayelement may be utilized to perform display. In this manner, with oneembodiment of the present invention, a convenient display device havinghigh visibility irrespective of surrounding brightness or an all-weatherdisplay device can be fabricated.

The display device of one embodiment of the present invention mayinclude one, or two second display elements corresponding to one firstdisplay element. For example, the number of pixels constituted by thefirst display element(s) is preferably equal to the number of pixelsconstituted by the second display element(s), in which case displayperformed using the first display elements and display performed usingthe second display elements have substantially the same degree ofresolution.

It is preferable that the display device having the above structurefurther include a signal line, a pixel circuit, a first conductivelayer, a second conductive layer, and an insulating layer. The seconddisplay element is electrically connected to the pixel circuit. Thefirst display element is electrically connected to the first conductivelayer. The first conductive layer includes a portion overlapping withthe second conductive layer with the insulating layer providedtherebetween. The first conductive layer is electrically connected tothe second conductive layer. The second conductive layer is electricallyconnected to the pixel circuit. The pixel circuit is electricallyconnected to the signal line. The pixel circuit can drive both the firstdisplay element and the second display element between which theinsulating layer is sandwiched.

Alternatively, the display device of one embodiment of the presentinvention includes a liquid crystal element and a light-emittingelement. The liquid crystal element includes a liquid crystal layer, afirst conductive layer, and a second conductive layer. The firstconductive layer has a function of reflecting light. The firstconductive layer has an opening portion. The light-emitting elementincludes a layer containing a light-emitting substance, a thirdconductive layer, and a fourth conductive layer. The light-emittingelement includes a portion overlapping with the opening portion. Thelight-emitting element has a function of emitting light toward theopening portion. The opening portion preferably has an area greater thanor equal to 5% and less than or equal to 20% of the area of the firstconductive layer.

In the display device of one embodiment of the present invention, areflective liquid crystal element is included as the first displayelement, and an organic EL element is included as the second displayelement.

Thus, when a sufficient amount of external light enters the displaydevice, display can be performed by utilizing external light and thereflective liquid crystal element. When the surroundings of the displaydevice are dark and a small amount of external light enters the displaydevice, display can be performed by utilizing the organic EL element. Inthis manner, with one embodiment of the present invention, a convenientdisplay device having high visibility irrespective of surroundingbrightness or an all-weather display device can be fabricated.

It is preferable that the display device having the above structurefurther include a signal line, a pixel circuit, a fifth conductivelayer, a sixth conductive layer, and an insulating layer. Thelight-emitting element is electrically connected to the pixel circuit.The liquid crystal element is electrically connected to the fifthconductive layer. The fifth conductive layer includes a portionoverlapping with the sixth conductive layer with the insulating layerprovided therebetween. The fifth conductive layer is electricallyconnected to the sixth conductive layer. The sixth conductive layer iselectrically connected to the pixel circuit. The pixel circuit iselectrically connected to the signal line. The pixel circuit can driveboth the light-emitting element and the liquid crystal element betweenwhich the insulating layer is sandwiched.

FIG. 41 is a circuit diagram of pixel circuits included in the displaydevice in this embodiment. FIG. 41 is a circuit diagram of a pixelcircuit 630(i,j) and a pixel circuit 630(i,j+1).

The pixel circuits 630(i,j) and 630(i,j+1) illustrated in FIG. 41 eachinclude a switch SW1, a switch SW2, a capacitor C1, a capacitor C2, anda transistor M. Although a first display element 650 and a seconddisplay element 640 are included in the dotted frame which denotes thepixel circuit in FIG. 41, hereinafter the case where the first displayelement 650 and the second display element 640 are not included in thepixel circuit is described.

FIG. 41 shows an example where the switch SW1 and the switch SW2 eachinclude a transistor. The switch SW1 and the switch SW2 each preferablyinclude a transistor using an oxide semiconductor.

The connection relation between the pixel circuits 630(i,j) and630(i,j+1) in FIG. 41 is described.

The pixel circuit 630(i,j) is electrically connected to a signal lineS1(i,j), a signal line S2(j), a scan line G1(i), a scan line G2(i), awiring CSCOM, and a wiring ANO.

The pixel circuit 630(i,j+1) is electrically connected to a signal lineS1(j+1), a signal line S2(j+1), a scan line G1(i), a scan line G2(f), awiring CSCOM, and a wiring ANO.

In the case where a voltage of a signal supplied to the signal lineS2(j) is different from a voltage of a signal supplied to the signalline S1(j+1), the signal line S1(j+1) is positioned apart from thesignal line S2(j). In FIG. 41, the signal line S2(j+1) is positionedadjacent to the signal line S2(j).

A gate of the switch SW1 is electrically connected to the scan lineG1(i). One of a source and a drain of the switch SW1 is electricallyconnected to the signal line S1(j) and the other is electricallyconnected to one electrode of the capacitor C1 and one electrode of thefirst display element 650.

The other electrode of the capacitor C1 is electrically connected to thewiring CSCOM.

The other electrode of the first display element 650 is electricallyconnected to a wiring VCOM1.

A gate of the switch SW2 is electrically connected to the scan lineG2(i). One of a source and a drain of the switch SW2 is electricallyconnected to the signal line S2(j) and the other is electricallyconnected to a gate and a back gate of the transistor M and oneelectrode of the capacitor C2.

One of a source and a drain of the transistor M is electricallyconnected to the wiring ANO and the other electrode of the capacitor C2and the other is electrically connected to one electrode of the seconddisplay element 640.

The other electrode of the second display element 640 is electricallyconnected to a wiring VCOM2.

The pixel circuit 630(i,j) is electrically connected to the firstdisplay element 650(i,j) and the second display element 640(i,j).

FIG. 42A is a block diagram illustrating arrangement of pixels, wirings,and the like included in a display device 600. FIGS. 42B1 and 42B2 areschematic views each illustrating opening portions 651H included in thedisplay device 600.

As illustrated in FIG. 42A, the display device 600 includes i scan linesG1, i scan lines G2, j signal lines S1, j signal lines S2, j wiringsCSCOM, j wirings ANO, m×n pixels 602, a driver circuit GD, and a drivercircuit SD. Note that i is an integer greater than or equal to 1 andless than or equal to m, j is an integer greater than or equal to 1 andless than or equal to n, and m and n are each an integer greater than orequal to 1.

The display device 600 in FIGS. 42A, 42B1, and 42B2 includes the pixel602(i,j).

The scan line G1(i), the scan line G2(i), the wiring CSCOM, and thewiring ANO are each electrically connected to a group of pixels 602(i,j)to 602(i,n) arranged in a row direction (a direction denoted by an arrowR in FIGS. 42A, 42B1, and 42B2).

The signal line S1(j) and the signal line S2(j) are each electricallyconnected to another group of pixels 602(1,j) to 602(m,j) arranged in acolumn direction (a direction denoted by an arrow C in FIGS. 42A, 42B 1,and 42B2).

For example, the pixel 602(i,j+1) adjacent to the pixel 602(i,j) in therow direction preferably includes an opening portion in a positiondifferent from that of the opening portion 651H in the pixel 602(i,j)(FIG. 42B1).

Alternatively, for example, the pixel 602(i+1,j) adjacent to the pixel602(i,j) in the column direction preferably includes an opening portionin a position different from that of the opening portion 651H in thepixel 602(i,j) (FIG. 42B2).

Alternatively, the opening portion 651H may be provided at the sameposition in all of the pixels.

The driver circuit GD is electrically connected to the scan line G1(i).As the driver circuit GD, any of a variety of sequential circuits suchas a shift register can be used. In the driver circuit GD, a transistor,a capacitor, and the like can be used. A transistor included in thedriver circuit GD can be formed in the same steps as the transistorsincluded in the pixel circuit 630(i,j).

The driver circuit SD is electrically connected to the signal lineS1(j). For example, an integrated circuit can be used as the drivercircuit SD. Specifically, an integrated circuit formed on a siliconsubstrate can be used as the driver circuit SD.

For example, a chip on glass (COG) method can be used to mount thedriver circuit SD on a pad electrically connected to the pixel circuit630(i,j). Specifically, the integrated circuit can be mounted on the padwith the use of an anisotropic conductive film.

FIG. 43A is a bottom view (a view of a surface opposite to a displaysurface) of the display device 600. FIGS. 43B1 and 43B2 are each abottom view illustrating a structure of part of the display device 600.FIG. 43B2 is a bottom view in which some components in FIG. 43B 1 arenot illustrated. FIG. 43A shows an example where one unit includes threepixels 602(i,j).

FIG. 44A is a cross-sectional view taken along dashed-dotted linesX1-X2, X3-X4, X5-X6, X7-X8, X9-X10, and X11-X12 in FIGS. 43A, 43B1, and43B2. FIGS. 44B to 44D are each a structure example of a transistorwhich can be used in the display device 600.

In FIG. 44A, a dashed arrow denotes the direction in which the firstdisplay element 650(i,j) performs display by controlling the intensityof external light reflection. In addition, in FIG. 44A, a solid arrowdenotes the direction in which the second display element 640(i,j)performs display. Thus, the first display element 650(i,j) and thesecond display element 640(i,j) can perform display in the samedirection.

As illustrated in FIG. 44A, the driver circuit GD includes a transistorMD.

As illustrated in FIG. 44A, the pixel 602(i,j) includes the firstdisplay element 650(i,j), the second display element 640(i,j), a firstconductive layer 681, a second conductive layer 682, an insulating layer621, and the pixel circuit 630(i,j). In FIG. 44A, the transistor M andthe switch SW1 in the pixel circuit 630(i,j) are illustrated.

The first display element 650(i,j) includes a first electrode 651(i,j),a second electrode 652, and a layer 653 containing a liquid crystalmaterial. The second electrode 652 is positioned so that an electricfield which controls the alignment of the liquid crystal material isgenerated between the second electrode 652 and the first electrode651(i,j).

The display device 600 preferably includes an alignment film AF and analignment film AF2. The layer 653 containing a liquid crystal materialis positioned between the alignment film AF1 and the alignment film AF2.

The first display element 650(i,j) includes a reflective layer which hasa function of reflecting incident light. In addition, the first displayelement 650(i,j) has a function of controlling the intensity ofreflected light. The reflective layer includes the opening portion 651H.FIG. 44A shows an example where the first electrode 651(i,j) includes astack of a conductive layer that transmits light and a conductive layerthat reflects light. Note that the reflective layer may be providedseparately from the first electrode 651(i,j).

As illustrated in FIG. 44A, side edge portions of the first electrode651(i,j) are embedded in the insulating layer 621.

As the second display element 640(i,j), a light-emitting element can beused. The second display element 640(i,j) includes a third electrode641(i,j), a fourth electrode 642, and a layer 643(j) containing alight-emitting substance. An insulating layer 668 covers end portions ofthe third electrode 641(i,j). The insulating layer 668 formed along theedges of the third electrode 641(i,j) can prevent a short circuitbetween the third electrode 641(i,j) and the fourth electrode 642.

The second display element 640(i,j) has a function of emitting lighttoward the opening portion 651H.

The second display element 640(i,j) can perform display in a regionsurrounded by a region in which the first display element 650(i,j)performs display (FIGS. 43B1 and 43B2). The first display element650(i,j) performs display in a region overlapping with the firstelectrode 651(i,j), and the second display element 640(i,j) performsdisplay in a region overlapping with the opening portion 651H.

The first conductive layer 681 is electrically connected to the firstdisplay element 650(i,j). In FIG. 44A, the first conductive layer 681and the first electrode 651(i,j) are electrically connected to eachother. The first conductive layer 681 can have a single-layer structureor a stacked-layer structure. The first conductive layer 681 may serveas the first electrode 651(i,j).

The second conductive layer 682 has a region overlapping with the firstconductive layer 681. The second conductive layer 682 can have asingle-layer structure or a stacked-layer structure.

The insulating layer 621 has a region sandwiched between the secondconductive layer 682 and the first conductive layer 681.

In a region 691 c, the second conductive layer 682 is electricallyconnected to the first conductive layer 681.

The second conductive layer 682 is electrically connected to the pixelcircuit 630(i,j). In FIG. 44A, the second conductive layer 682 iselectrically connected to a conductive layer 612 b.

One of a conductive layer 612 a and the conductive layer 612 b functionsas a source of the transistor serving as the switch SW1 and the otherfunctions as a drain thereof. The conductive layer 612 a is electricallyconnected to the signal line S1(j). Alternatively, the conductive layer612 a can be referred to as part of the signal line S1(j) (FIG. 41 andFIG. 44A).

The first electrode 651(i,j) included in the first display element650(i,j) is electrically connected to the conductive layer 612 bincluded in the switch SW1 through the first conductive layer 681 andthe second conductive layer 682. In other words, the first displayelement 650(i,j) is electrically connected to the pixel circuit630(i,j). Note that a method for electrically connecting the firstdisplay element 650(i,j) to the pixel circuit 630(i,j) is not limitedthereto. For example, the first electrode 651(i,j) may be electricallyconnected to the conductive layer 612 b through the first conductivelayer 681 or the second conductive layer 682. Alternatively, the firstelectrode 651(i,j) may be directly connected to the conductive layer 612b.

One of the source and the drain of the transistor M is electricallyconnected to the wiring ANO. The third electrode 641(i,j) included inthe second display element 640(i,j) is electrically connected to theother of the source and the drain of the transistor M in a connectionportion 662. Thus, the second display element 640(i,j) is electricallyconnected to the pixel circuit 630(i,j). The transistor M overlaps withthe third electrode 641(i,j) with the insulating layer 661 providedtherebetween.

The display device 600 further includes a conductive layer 619 b and aconductive layer 611 b (FIG. 44A).

The insulating layer 621 has a region sandwiched between the conductivelayer 619 b and the conductive layer 611 b.

The conductive layer 619 b is electrically connected to the conductivelayer 611 b in a region 691 b. In addition, the conductive layer 611 bis electrically connected to the pixel circuit 630(i,j).

The conductive layer 619 b is electrically connected to a flexibleprinted circuit board (referred to as an FPC) through a connector ACF.As a result, power or signals can be supplied to the pixel circuitthrough the conductive layer 619 b. In FIG. 44A, a connection portionbetween the conductive layer 619 b and the FPC is positioned on adisplay surface side of the display device 600; however, the connectionportion may be positioned on a surface opposite to the display surface.

The pixel 602(i,j) further includes a coloring layer CF, alight-blocking layer BM, an insulating layer 671, and a functional film670.

The coloring layer CF has a region overlapping with the first displayelement 650(i,j). The light-blocking layer BM has an opening portion ina region overlapping with the first display element 650(i,j).

The coloring layer CF has a region overlapping with the second displayelement 640(i,j). The light-blocking layer BM has an opening portion ina region overlapping with the second display element 640(i,j).

The insulating layer 671 is provided between the layer 653 containing aliquid crystal material and the coloring layer CF or the light-blockinglayer BM. Thus, unevenness due to the thickness of the coloring layer CFcan be reduced. Alternatively, impurities can be prevented from beingdiffused from the light blocking layer BM, the coloring layer CF, or thelike to the layer 653 containing a liquid crystal material.

The functional film 670 has a region overlapping with the first displayelement 650(i,j) and a region overlapping with the second displayelement 640(i,j). The functional film 670 is provided so that asubstrate 690 is sandwiched between the functional film 670 and thefirst display element 650(i,j).

The second display element 640(i,j) is sealed by a bonding layer 605 anda substrate 610. A method for sealing the second display element640(i,j) is not limited thereto. For example, the second display element640(i,j) can be covered with an insulating film having a high gasbarrier property. In this case, the bonding layer 605 and the substrate610 are not necessarily provided.

The substrate 690 has a region overlapping with the substrate 610. Afunctional layer 660 is provided between the substrate 610 and thesubstrate 690. The functional layer 660 includes the pixel circuit630(i,j), the second display element 640(i,j), an insulating layer 616,an insulating layer 618, the insulating layer 621, the insulating layer661, and the insulating layer 668. A bonding layer 695 has a function ofbonding the functional layer 660 to the substrate 690. A structure bodyKB has a function of providing a certain space between the functionallayer 660 and the substrate 690.

The substrate 690 is preferably thin. For example, for the substrate690, a non-alkali glass substrate polished to a thickness of 0.2 mm or0.1 mm can be preferably used.

The display device 600 further includes a conductive layer 619 a, aconductive layer 611 a, and a conductor CP.

The insulating layer 621 has a region sandwiched between the conductivelayer 619 a and the conductive layer 611 a.

The conductive layer 619 a is electrically connected to the conductivelayer 611 a in a region 691 a. In addition, the conductive layer 611 ais electrically connected to the pixel circuit 630(i,j).

The conductor CP is sandwiched between the conductive layer 619 a andthe second electrode 652, and electrically connects the conductive layer619 a to the second electrode 652. For example, a conductive particlecan be used as the conductor CP.

Examples of materials which can be used for the display device aredescribed below. Note that the description of Embodiment 3 can bereferred to for the materials which can be used for the substrate, thebonding layer, the transistor, the light-emitting element, theconductive layer, the insulating layer, the coloring layer, and thelight-blocking layer included in the display device; thus, detaileddescription of the materials is omitted.

For example, a display element having a function of controllingtransmission or reflection of light can be used as the first displayelement 650(i,j). For example, a combined structure of a polarizingplate and a liquid crystal element or a MEMS shutter display element canbe used. The use of a reflective display element can reduce powerconsumption of a display panel. Specifically, a reflective liquidcrystal display element can be used as the first display element650(i,j).

A liquid crystal element that can be driven by any of the followingdriving methods can be used: an in-plane switching (IPS) mode, a twistednematic (TN) mode, a fringe field switching (FFS) mode, an axiallysymmetric aligned micro-cell (ASM) mode, an optically compensatedbirefringence (OCB) mode, a ferroelectric liquid crystal (FLC) mode, anantiferroelectric liquid crystal (AFLC) mode, and the like.

In addition, a liquid crystal element that can be driven by, forexample, a vertical alignment (VA) mode such as a multi-domain verticalalignment (MVA) mode, a patterned vertical alignment (PVA) mode, anelectrically controlled birefringence (ECB) mode, a continuous pinwheelalignment (CPA) mode, or an advanced super view (ASV) mode can be used.

For example, thermotropic liquid crystal, low-molecular liquid crystal,high-molecular liquid crystal, polymer dispersed liquid crystal,ferroelectric liquid crystal, or anti-ferroelectric liquid crystal canbe used. Alternatively, a liquid crystal material which exhibits acholesteric phase, a smectic phase, a cubic phase, a chiral nematicphase, an isotropic phase, or the like can be used. Alternatively, aliquid crystal material which exhibits a blue phase can be used.

For the reflective layer, a material that reflects visible light isused. For example, a material containing silver, a material containingsilver and palladium, and a material containing silver and copper can beused.

The reflective layer can reflect light transmitted through the layer 653containing a liquid crystal material.

The reflective layer may have an uneven surface. In that case, incidentlight is reflected in various directions, which enables white display.

The first electrode 651(i,j) may be used for the reflective layer.Alternatively, the reflective layer may be positioned between the layer653 containing a liquid crystal material and the first electrode651(i,j). Alternatively, the light-transmitting first electrode 651(i,j)may be positioned between the reflective layer and the layer 653containing a liquid crystal material.

The total area of the opening portion 651H can be set as appropriate. Ifthe ratio of the total area of the opening portion 651H to the totalarea of the reflective layer other than the opening portion is low,bright images can be displayed using the first display element 650(i,j).If the ratio of the total area of the opening portion 651H to the totalarea of the reflective layer other than the opening portion is high,bright images can be displayed using the second display element640(i,j). The area of the opening portion 651H is preferably set toobtain sufficient bright images using any display element.

Furthermore, if the area of the opening portion 651H is small, a uniformelectric field can be applied to the layer 653 containing a liquidcrystal material and a reduction in display quality of the first displayelement 650(i,j) can be suppressed. If the area of the opening portion651H is large, light emitted from the second display element 640(i,j)can be extracted to the outside of the display device with highefficiency.

The shape of the opening portion 651H is not particularly limited, andmay be a polygonal shape such as a quadrangular shape, an ellipticalshape, a circular shape, a cross shape, a stripe shape, a slit-likeshape, and a checkered pattern, for example. The opening portion 6511Imay be close to the adjacent pixel. The opening portion 6511I ispreferably provided close to a subpixel emitting light of the samecolor, in which case an undesired phenomenon in which light emitted fromthe second display element 640(i,j) enters a coloring layer of theadjacent subpixel emitting light of different color (also referred to ascross talk) can be suppressed.

For the second electrode 652, a conductive material transmitting visiblelight can be used. For example, a conductive oxide such as a conductiveoxide containing indium can be used for the second electrode 652.Alternatively, a metal film that is thin enough to transmit light (e.g.,a thickness of 1 nm or more and 10 nm or less) can be used as the secondelectrode 652. Alternatively, a metal nanowire such as a nanowirecontaining silver can be used for the second electrode 652.

Specifically, indium oxide, indium tin oxide, indium zinc oxide, zincoxide, zinc oxide to which gallium is added, zinc oxide to whichaluminum is added, or the like can be used for the second electrode 652.

For the structure body KB, an organic material, an inorganic material,or a composite material of an organic material and an inorganic materialcan be used. The structure body KB functions as a spacer. As thestructure body KB, a particulate spacer may be used. For the particulatespacer, silica or an elastic material such as a resin or rubber ispreferably used. In some cases, the particulate spacer may be verticallycrushed.

For the alignment films AF1 and AF2, polyimide or the like can be used.The alignment films AF1 and AF2 are preferably formed by a rubbingprocess or an optical alignment technology so as to be aligned in apredetermined direction. For example, a film containing solublepolyimide can be used as the alignment films AF1 and AF2.

As the functional film 670, a polarizing plate, a retardation plate, adiffusing film, an anti-reflective film, a condensing film, or the likecan be used. Alternatively, a polarizing plate containing a dichromaticpigment can be used for the functional film 670. Alternatively, anantistatic film preventing the attachment of a foreign substance, awater repellent film suppressing the attachment of stain, a hard coatfilm suppressing generation of a scratch in use, or the like can be usedfor the functional film 670.

The display device includes transistors with one or more kinds ofstructures. For example, in the display device, at least one kind of thetransistors with the structures illustrated in FIGS. 44B to 44D can beused.

The switch SW1 illustrated in FIG. 44B includes a conductive layer 604,an insulating layer 606, a semiconductor layer 608, the conductive layer612 a, and the conductive layer 612 b. The conductive layer 604functions as a gate. One of the conductive layer 612 a and theconductive layer 612 b functions as a source and the other functions asa drain. The insulating layer 606 functions as a gate insulating layer.The structure of the switch SW1 is not limited to the structure in FIG.44B, and may be the structure illustrated in FIG. 44C or 44D.

The transistor M and the transistor MD illustrated in FIG. 44C includethe conductive layer 604, the insulating layer 606, the semiconductorlayer 608, the conductive layer 612 a, the conductive layer 612 b, and aconductive layer 624. The conductive layer 604 functions as a gate. Oneof the conductive layer 612 a and the conductive layer 612 b functionsas a source and the other functions as a drain. The insulating layer 606functions as a gate insulating layer. The conductive layer 624 functionsas a back gate. The insulating layer 616 is positioned between theconductive layer 624 and the semiconductor layer 608. The conductivelayer 624 has a portion overlapping with the conductive layer 604 withthe semiconductor layer 608 provided therebetween. The conductive layer624 is positioned between the insulating layer 616 and the insulatinglayer 618. The transistor M and the transistor MD may have the samestructure or different structures. For example, the transistor M and thetransistor MD can each have any of the structures illustrated in FIGS.44B to 44D. In the transistor M in FIG. 44A, the width of the conductivelayer 604 is, but not limited to, smaller than that of the conductivelayer 624. In the transistor MD in FIG. 44A, the width of the conductivelayer 604 is, but not limited to, larger than that of the conductivelayer 624; however, the present invention is not limited thereto.

A transistor illustrated in FIG. 44D includes the conductive layer 604,the insulating layer 606, the semiconductor layer 608, the conductivelayer 612 a, and the conductive layer 612 b. The conductive layer 604functions as a gate. The insulating layer 606 functions as a gateinsulating layer.

The semiconductor layer 608 includes a first region 608 a and a secondregion 608 b which do not overlap with the conductive layer 604. Thesemiconductor layer 608 further includes a third region 608 c betweenthe first region 608 a and the second region 608 b. The third region 608c overlaps with the conductive layer 604.

The first region 608 a and the second region 608 b have lowerresistivity than the third region 608 c, and one of the first region 608a and the second region 608 b serves as a source region and the otherserves as a drain region. The first region 608 a is electricallyconnected to the conductive layer 612 a. The second region 608 b iselectrically connected to the conductive layer 612 b.

As described in Embodiment 1 and the like, in the electronic device ofone embodiment of the present invention, the display panel and the powerstorage device overlap with each other. FIG. 45 illustrates an exampleof a cross-sectional view in the case where a display panel and a thinsecondary battery overlap with each other. The display panel in FIG. 45has a structure similar to that of the display device 600 in FIG. 44Aand the thin secondary battery in FIG. 45 has a structure similar tothat of the battery unit 500 in FIG. 14A.

In FIG. 45, the substrate 610 included in the display panel and theexterior body 509 included in the battery unit are in contact with eachother; however, one embodiment of the present invention is not limitedthereto. The display panel and the battery unit may be fixed to eachother with an adhesive or the like. Alternatively, a circuit board orthe like may be provided between the display panel and the battery unit.

This embodiment can be combined with any other embodiment asappropriate.

This application is based on Japanese Patent Application serial no.2015-088420 filed with Japan Patent Office on Apr. 23, 2015, andJapanese Patent Application serial no. 2015-157021 filed with JapanPatent Office on Aug. 7, 2015, and the entire contents of which arehereby incorporated by reference.

What is claimed is:
 1. An electronic device comprising: a display panel;a power storage device; a circuit; a sealing structure comprising afirst film and a second film; and a structure body, wherein the displaypanel includes a light-emitting element, wherein the light-emittingelement is configured to emit light with power supplied from the powerstorage device, wherein the circuit includes an antenna and isconfigured to charge the power storage device wirelessly, wherein thesealing structure is connected to the structure body, wherein the firstfilm and the second film overlap with the structure body, wherein thedisplay panel, the power storage device, and the circuit are sealed bythe first film and the second film, wherein at least part of the sealingstructure is configured to transmit light emitted from thelight-emitting element, and wherein the structure body is capable ofbeing worn on an arm.
 2. The electronic device according to claim 1,wherein the power storage device, the antenna, and the display panel arestacked in this order from an arm side when the structure body is wornon the arm.
 3. The electronic device according to claim 1, furthercomprising an audio input portion.
 4. The electronic device according toclaim 1, further comprising a touch sensor.
 5. The electronic deviceaccording to claim 1, further comprising a member which enables theelectronic device to be worn on an arm.
 6. The electronic deviceaccording to claim 1, wherein the display panel has a curved surfacewhose radius of curvature is larger than or equal to 1 mm and smallerthan or equal to 150 mm, and wherein the power storage device has acurved surface whose radius of curvature is larger than or equal to 10mm and smaller than or equal to 150 mm.
 7. The electronic deviceaccording to claim 1, wherein the display panel includes a flexibleportion.
 8. The electronic device according to claim 1, wherein thepower storage device includes a flexible portion.
 9. The electronicdevice according to claim 1, wherein an inside of the sealing structureis a reduced pressure atmosphere.
 10. The electronic device according toclaim 1, wherein a buoyancy material is inside the sealing structure.